Patent US4727044A successfully refreshed from Google Patents.
US4727044A
Expired / Lapsed
US
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Method of making a thin film transistor with laser recrystallized source and drain
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-09-29
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Granted: 1988-02-23
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Expires: 2006-09-29
Abstract
Abstract A method of manufacturing an insulated gate field effect transistor by forming a non-single crystalline semiconductor film of a first conductivity type on an insulating substrate where the semiconductor film includes hydrogen or fluoride, forming a gate insulating film on part of the semiconductor film to be the gate region, forming a gate electrode on the insulating film, inverting the conductivity type of the part of the conductor film to be the source and grain regions by ion doping of impurity corresponding to the second conductivity type opposite to the first conductivity type with the gate electrode functioning as a mask, and then exposing the non-single-crystalline semiconductor film to illumination with the gate electrode functioning as a mask to selectively crystallize the source and drain regions.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:26
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/38; H10P14/3802; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
128 words
A method for manufacturing an insulated gate field effect transistor comprising the steps of: forming a non-single crystalline semiconductor film of a first conductivity type on an insulating substrate, said semiconductor film including hydrogen or fluoride; forming a gate insulating film on the part of said semiconductor film to be the gate region; forming a gate electrode on said insulating film; inverting the conductivity type of the part of said semiconductor film to be the source and drain regions by ion doping of impurity corresponding to the second conductivity type opposite to said first conductivity type with said gate electrode functioning as a mask; and exposing said non-single-crystalline semiconductor film to illumination with said gate electrode functioning as a mask to selectively crystallize said source and drain regions.
Claim 2
Independent Claim
128 words
A method for manufacturing an insulated gate field effect transistor comprising the steps of: forming a non-single crystalline semiconductor film of a first conductivity type on an insulating substrate, said semiconductor film including hydrogen or fluoride; forming a gate insulating film on the part of said semiconductor film to be the gate region; forming a gate electrode on said insulating film; inverting the conductivity type of the part of said semiconductor film to be the source and drain regions by ion doping of impurity corresponding to the second conductivity type opposite to said first conductivity type with said gate electrode functioning as a mask; and exposing said non-single-crystalline semiconductor film to illumination with said gate electrode functioning as a mask to selectively crystallize said source and drain regions.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the gate region positioned just below said gate electrode and insulating film is made from amorphous semiconductor material.
Claim 4
Dependent Claim
26 words
The method of claim 1, wherein said exposure step is carried out with light having a wavelength in the range of 250 nm to 600 nm.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein the temperature of said substrate is maintained sufficiently low that neither hydrogen nor fluoride is diffused to the outside thereof.
Claim 6
Dependent Claim
16 words
The method of claim 4 wherein the temperature of said substrate is maintained below 400° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-22 | 1991-08-24 | 1992-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-22 | 1995-08-24 | 1996-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-22 | 1999-08-24 | 2000-02-23 | $7700.00 | Window Closed / Lapsed |