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US4726885A
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Selenidization passivation
Assignee: DRS Infrared Technologies LP
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Filing: 1986-02-07
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Granted: 1988-02-23
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Expires: 2006-02-07
Abstract
Abstract A method of passivation of HG 1-x Cd x Te by anodic selenidization is disclosed; in preferred embodiments the selenidization is by anodic growing of the selenides in an electrolyte solution of sodium selenide in water and ethylene glycol or in a solution of sodium selenide plus sodium hydroxide in water and ethylene glycol. Also, infrared detectors incorporating such selenide passivated Hg 1-x Cd x Te are disclosed.
Inventors
- 👤 Towfik H. Teherani
- 👤 D. Dawn Little
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; C; C25; C25D; C25D9/00; C25D9/04; C25D9/06
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
40 words
A method of passivating a Hg 1-x Cd x Te substrate comprising the steps of: (a) providing a substrate of Hg 1-x Cd x Te; and (b) anodically growing a selenide layer on said Hg 1-x Cd x Te substrate.
Claim 2
Independent Claim
40 words
A method of passivating a Hg 1-x Cd x Te substrate comprising the steps of: (a) providing a substrate of Hg 1-x Cd x Te; and (b) anodically growing a selenide layer on said Hg 1-x Cd x Te substrate.
Claim 3
Dependent Claim
21 words
The method of claim 1, wherein: (a) said anodic growing is performed by providing an electrochemical bath having selenide ions therein.
Claim 4
Dependent Claim
13 words
The method of claim 2, wherein: (a) said bath includes ethylene glycol therein.
Claim 5
Dependent Claim
31 words
The method of claim 1, further comprising the step of: (a) cleaning a surface of said Hg 1-x Cd x Te substrate prior to said anodic growth at said cleaned surface.
Claim 6
Independent Claim
58 words
A method of passivating Hg 1-x Cd x Te on a substrate comprising the steps of: (a) providing said Hg 1-x Cd x Te on a substrate, (b) cleaning a surface of said Hg 1-x Cd x Te; and (c) anodically growing a selenide layer with components of said Hg 1-x Cd x Te at said cleaned surface.
Claim 7
Independent Claim
58 words
A method of passivating Hg 1-x Cd x Te on a substrate comprising the steps of: (a) providing said Hg 1-x Cd x Te on a substrate, (b) cleaning a surface of said Hg 1-x Cd x Te; and (c) anodically growing a selenide layer with components of said Hg 1-x Cd x Te at said cleaned surface.
Claim 8
Dependent Claim
43 words
The method of claim 5, wherein: (a) said anodic growing includes providing a selenide ion containing electrolyte solution, immersing said Hg 1-x Cd x Te in said electrolyte solution, and applying a voltage between said Hg 1-x Cd x Te and said solution.
Claim 9
Dependent Claim
19 words
The method of claim 6, wherein: (a) said voltage is applied to maintain the anodizing current density approximately constant.
Claim 10
Dependent Claim
17 words
The method of claim 7, wherein: (a) said current density is about 100 microamperes per square centimeter.
Claim 11
Dependent Claim
17 words
The method of claim 7, wherein: (a) said electrolyte solution includes a water soluble selenide and water.
Claim 12
Dependent Claim
14 words
The method of claim 7, wherein: (a) said water soluble selenide is sodium selenide.
Claim 13
Dependent Claim
13 words
The method of claim 7, wherein: (a) said electrolyte solution includes ethylene glycol.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-22 | 1991-08-24 | 1992-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-22 | 1995-08-24 | 1996-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-22 | 1999-08-24 | 2000-02-23 | $7700.00 | Window Closed / Lapsed |