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US4137544A
Expired / Lapsed
US
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Mercury cadmium telluride photodiode
Assignee: Honeywell Inc
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Filing: 1977-07-05
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Granted: 1979-01-30
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Expires: 1997-07-05
Abstract
Abstract A mercury cadmium telluride photodiode includes an n-type mercury cadmium telluride body with an accumulation layer proximate a first surface of the body. A p-type region is formed in the body at the first surface so that the n-type accumulation layer surrounds the p-type region at the first surface.
Inventors
- 👤 Toivo Koehler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:59
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H10F71/1253; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2212
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
105 words
A mercury cadmium telluride photodiode comprising: a body of mercury cadmium telluride having a n-type bulk region therein; a n-type accumulation region present in the body proximate a first surface of the body, the n-type accumulation region having a greater carrier concentration than does the n-type bulk region; a p-type region present in the body, the p-type region extending from the first surface into the body, whereby the n-type accumulation region surrounds the p-type region at the first surface; a first ohmic contact means providing electrical contact to the p-type region; and a second ohmic contact means providing electrical contact to the n-type bulk region.
Claim 2
Dependent Claim
105 words
A mercury cadmium telluride photodiode comprising: a body of mercury cadmium telluride having a n-type bulk region therein; a n-type accumulation region present in the body proximate a first surface of the body, the n-type accumulation region having a greater carrier concentration than does the n-type bulk region; a p-type region present in the body, the p-type region extending from the first surface into the body, whereby the n-type accumulation region surrounds the p-type region at the first surface; a first ohmic contact means providing electrical contact to the p-type region; and a second ohmic contact means providing electrical contact to the n-type bulk region.
Claim 3
Dependent Claim
23 words
The mercury cadmium telluride photodiode of claim 1 and further comprising: a passivation layer covering at least a portion of the first surface.
Claim 4
Dependent Claim
16 words
The mercury cadmium telluride photodiode of claim 2 wherein the passivation layer is an anodic oxide.
Claim 5
Dependent Claim
20 words
The mercury cadmium telluride photodiode of claim 2 wherein the passivation layer is substantially transparent to radiation to be detected.
Claim 6
Dependent Claim
18 words
The mercury cadmium telluride photodiode of claim 2 and further comprising: an encapsulation layer overlaying the passivation layer.
Claim 7
Dependent Claim
30 words
The mercury cadmium telluride photodiode of claim 2 wherein the passivation layer has an opening and wherein the first contact means extends through the opening to contact the p-type region.
Claim 8
Dependent Claim
33 words
The mercury cadmium telluride photodiode of claim 1 wherein the n-type bulk region has a carrier concentration of between about 1 × 10 14 and about 1 × 10 16 carriers/cm 3 .
Claim 9
Dependent Claim
32 words
The mercury cadmium telluride photodiode of claim 7 wherein the p-type region has a carrier concentration of between about 1 × 10 15 and about 1 × 10 17 carriers/cm 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-29 | 1982-07-31 | 1983-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-29 | 1986-07-31 | 1987-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-29 | 1990-07-31 | 1991-01-30 | $7700.00 | Window Closed / Lapsed |