Reactive ion etch chemistry for providing deep vertical trenches in semiconductor substrates

Claim 2

A process for etching portions of a monocrystalline silicon material so as to form trenches having sidewalls and bottoms therein, comprising the step of treating the material in a reactor having a gaseous plasma comprised of more than 70% hydrogen chloride, oxygen, and an amount of boron trichloride sufficient to remove oxides formed during said etching process from bottoms of said trenches without substantially removing oxides formed during said etching process from sidewalls of said trenches.

Claim 3

The process as recited in claim 1, wherein said plasma is comprised of 75%-86% HCl, 9%-16% O 2 , and 1%-8% BCl 3 .

Claim 4

The process as recited in claim 2, wherein said reactor is biased at a voltage of at least -400 volts during said treatment step.

Claim 5

The process as recited in claim 3, wherein said reactor is biased at a voltage within the range of -450 to -475 volts during said treatment step.

Claim 6

The process as recited in claim 2, wherein said reactor pressure is within the range of 5 to 20 mTorr during said treatment step.

Claim 7

The process as recited in claim 5, wherein said reactor pressure is 10 mTorr during said treatment step.

Claim 8

A process for etching trenches in a silicon substrate, comprising the steps of: forming a masking layer on the substrate so as to expose portions of the substrate in which the trenches are to be formed; and treating the substrate in a plasma reactor having a plasma comprising more than 70% hydrogen chloride, oxygen, and approximately 1%-10% boron trichloride.

Claim 9

A process for etching trenches in a silicon substrate, comprising the steps of: forming a masking layer on the substrate so as to expose portions of the substrate in which the trenches are to be formed; and treating the substrate in a plasma reactor having a plasma comprising more than 70% hydrogen chloride, oxygen, and approximately 1%-10% boron trichloride.

Claim 10

The process as recited in claim 7, wherein said plasma comprises 75%-86% HCl, 9%-16% O 2 , and 1%-BCl 3 .

Claim 11

The process as recited in claim 8, wherein said reactor has a bias at not less than -400 volts and a pressure of not less than 10 mTorr during said treatment step.

Claim 12

The process as recited in claim 7, wherein said masking layer is not totally eroded during said treatment step.

Claim 13

The process as recited in claim 10, wherein said masking layer has an etch rate ratio of 1:50 with respect to the silicon substrate in said plasma.

Claim 14

The process as recited in claim 11, wherein said masking layer is comprised of silicon oxide.

Claim 15

A process for etching deep trenches in a silicon substrate, said trenches having substantially vertical sidewalls and a rounded bottom surfaces, comprising the steps of: forming a masking layer on the substrate; depositing and patterning a photolithographic material on said masking material, so as to expose selected area of said masking material; etching said selected areas of said masking material through said photolithographic material, so as to form apertures in said masking material that expose selected areas of the substrate; exposing said selected areas of the substrate to a first plasma etchant that removes residual surface oxides and getter impurities; and exposing said selected areas of the substrate to a second plasma etchant comprising more than 70% hydrogen chloride, oxygen, and approximately 1%-10% boron trichloride.

Claim 16

A process for etching deep trenches in a silicon substrate, said trenches having substantially vertical sidewalls and a rounded bottom surfaces, comprising the steps of: forming a masking layer on the substrate; depositing and patterning a photolithographic material on said masking material, so as to expose selected area of said masking material; etching said selected areas of said masking material through said photolithographic material, so as to form apertures in said masking material that expose selected areas of the substrate; exposing said selected areas of the substrate to a first plasma etchant that removes residual surface oxides and getter impurities; and exposing said selected areas of the substrate to a second plasma etchant comprising more than 70% hydrogen chloride, oxygen, and approximately 1%-10% boron trichloride.

Claim 17

The method as recited in claim 13, wherein said first plasma etchant comprises boron trichloride.

Claim 18

A process for etching trenches at least 6 μm deep into a surface of a silicon substrate, the trenches having substantially vertical sidewalls and rounded bottom surfaces, comprising the steps of forming a masking material on the substrate that exposes selected areas thereof; etching said selected areas in a first boron trichloride plasma for not more than five minutes, in order to remove residual oxides and getter impurities; and etching said selected areas in a second plasma having a gas flow of at least approximately 75% hydrogen chloride, at least approximately 9% oxygen, and at least approximately 1% boron trichloride.

Claim 19

A process for etching trenches at least 6 μm deep into a surface of a silicon substrate, the trenches having substantially vertical sidewalls and rounded bottom surfaces, comprising the steps of forming a masking material on the substrate that exposes selected areas thereof; etching said selected areas in a first boron trichloride plasma for not more than five minutes, in order to remove residual oxides and getter impurities; and etching said selected areas in a second plasma having a gas flow of at least approximately 75% hydrogen chloride, at least approximately 9% oxygen, and at least approximately 1% boron trichloride.

Claim 20

The process as recited in claim 15, wherein said plasma has a gas flow of 100 SCCM HCl, 15 SCCM O 2 , and 6 SCCM BCl 3 .

Claim 21

The process as recited in claim 16, wherein said second plasma is generated in a reactor having a bias of -450 volts and a pressure of 10 mTorr.

Claim 22

The process as recited in claim 15, wherein said first plasma has a gas flow of approximately 50 SCCM BCl 3 , said first plasma being generated in a reactor having a bias of -200 volts and a pressure of 20 mTorr.