Patent US4716452A successfully refreshed from Google Patents.
US4716452A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device constructed by polycell technique
Assignee: Toshiba Corp
•
Filing: 1985-11-08
•
Granted: 1987-12-29
•
Expires: 2005-11-08
Abstract
Abstract A semiconductor integrated circuit device has cell arrays each constituted by unit cells containing functional circuits. Polysilicon wiring layers or diffusion wiring layers are formed in the wiring regions provided among the arrays. A first metal wiring layer is formed by computer-aided design above each polysilicon wiring layer or each diffusion wiring layer. An insulating layer is then formed on the first metal wiring layer. A second metal wiring layer is formed by computer-aided design above the insulating layer. A via contact hole is cut in the insulating layer. A portion of the second metal wiring layer fills up the via contact hole, whereby the second metal wiring layer is connected to the first metal wiring layer. The via contact hole is formed above each polysilicon wiring layer or each diffusion wiring layer. It may have its axis intersecting with the axis of the polysilicon or diffusion wiring layer or not intersecting therewith. In the first case, the overlapping portions of the first and second metal wiring layer are made broader to facilitate the forming of the via contact hole. In the second case, the portion of each polysilicon or diffusion wiring layer which is positioned below the via contact hole is made broader than the other portions.
Inventors
- 👤 Hitoshi Kondoh
- 👤 Akihiro Sueda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/20
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
274 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a first insulating layer formed on said semiconductor substrate; a polysilicon wiring layer formed on said first insulating layer, embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays and connected at one end to one of the input terminals of the corresponding unit cell; a second insulating layer formed on said first insulating layer and said polysilicon wiring layers; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in said wiring region; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in said wiring region, and extending at right angles to said first metal wiring layer, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and positioned above said polysilicon wiring layer, for connecting said second metal wiring layer to said first metal wiring layer, said via contact hole having an axis aligned with that of said polysilicon wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said polysilicon wiring layer.
Claim 2
Dependent Claim
274 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a first insulating layer formed on said semiconductor substrate; a polysilicon wiring layer formed on said first insulating layer, embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays and connected at one end to one of the input terminals of the corresponding unit cell; a second insulating layer formed on said first insulating layer and said polysilicon wiring layers; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in said wiring region; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in said wiring region, and extending at right angles to said first metal wiring layer, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and positioned above said polysilicon wiring layer, for connecting said second metal wiring layer to said first metal wiring layer, said via contact hole having an axis aligned with that of said polysilicon wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said polysilicon wiring layer.
Claim 3
Dependent Claim
24 words
A device according to claim 1, wherein said first and second metal wiring layers comprise aluminum layers formed by using the polycell technique, respectively.
Claim 4
Dependent Claim
32 words
A device according to claim 1, wherein said first metal wiring layer is formed parallel to said cell arrays, and said second metal wiring layer is formed perpendicular to said cell arrays.
Claim 5
Dependent Claim
32 words
A device according to claim 1, wherein said first metal wiring layer is formed perpendicular to said cell arrays, and said second metal wiring layer is formed parallel with said cell arrays.
Claim 6
Dependent Claim
276 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a first insulating layer formed on said semiconductor substrate; a polysilicon wiring layer formed on said first insulating layer embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays, and having two ends and a portion broader than the other portions, one of said ends being connected to one of the input terminals of the corresponding unit cell; a second insulating layer formed on said first insulating layer and said polysilicon wiring layers; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in said wiring region; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in said wiring region, and extending at right angles to said first metal wiring layer, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and positioned above the broader portion of said polysilicon wiring layer, for connecting said first metal wiring layer to said second metal wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said polysilicon wiring layer.
Claim 7
Dependent Claim
276 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a first insulating layer formed on said semiconductor substrate; a polysilicon wiring layer formed on said first insulating layer embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays, and having two ends and a portion broader than the other portions, one of said ends being connected to one of the input terminals of the corresponding unit cell; a second insulating layer formed on said first insulating layer and said polysilicon wiring layers; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in said wiring region; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in said wiring region, and extending at right angles to said first metal wiring layer, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and positioned above the broader portion of said polysilicon wiring layer, for connecting said first metal wiring layer to said second metal wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said polysilicon wiring layer.
Claim 8
Dependent Claim
24 words
A device according to claim 5, wherein said first and second metal wiring layers comprise aluminum layers formed by using the polycell technique, respectively.
Claim 9
Dependent Claim
32 words
A device according to claim 5, wherein said first metal wiring layer is formed parallel to said cell arrays, and said second metal wiring layer is formed perpendicular to said cell arrays.
Claim 10
Dependent Claim
32 words
A device according to claim 5, wherein said first metal wiring layer is formed perpendicular to said cell arrays, and said second metal wiring layer is formed parallel with said cell arrays.
Claim 11
Dependent Claim
296 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a first insulating layer formed on said semiconductor substrate; a polysilicon wiring layer formed on said first insulating layer, embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays, and having two ends, one of said ends being connected to one of the input terminals of the corresponding unit cell; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in the wiring region, and having a portion broader than the other portions; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in the wiring region, extending at right angles to said first metal wiring layer, and having a portion broader than the other portions, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and above said polysilicon wiring layer in a position corresponding to the broader portions of said first and second metal wiring layers, for connecting said second metal wiring layer to said first metal wiring layer, said via contact hole having an axis aligned with that of said polysilicon wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said polysilicon wiring layer.
Claim 12
Dependent Claim
296 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a first insulating layer formed on said semiconductor substrate; a polysilicon wiring layer formed on said first insulating layer, embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays, and having two ends, one of said ends being connected to one of the input terminals of the corresponding unit cell; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in the wiring region, and having a portion broader than the other portions; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in the wiring region, extending at right angles to said first metal wiring layer, and having a portion broader than the other portions, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and above said polysilicon wiring layer in a position corresponding to the broader portions of said first and second metal wiring layers, for connecting said second metal wiring layer to said first metal wiring layer, said via contact hole having an axis aligned with that of said polysilicon wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said polysilicon wiring layer.
Claim 13
Dependent Claim
22 words
A device according to claim 9, wherein said first and second metal wiring layers comprise aluminum layers formed by the polycell technique.
Claim 14
Dependent Claim
32 words
A device according to claim 9, wherein said first metal wiring layer is formed parallel to said cell arrays, and said second metal wiring layer is formed perpendicular to said cell arrays.
Claim 15
Dependent Claim
32 words
A device according to claim 9, wherein said first metal wiring layer is formed perpendicular to said cell arrays, and said second metal wiring layer is formed parallel with said cell arrays.
Claim 16
Dependent Claim
292 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a diffusion wiring layer formed in one major surface region of said semiconductor substrate, embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays and connected at one end to one of the input terminals of the corresponding unit cell; a first insulating layer formed on said semiconductor substrate, that portion of said first insulating layer which contacts said diffusion wiring layer is thinner than the other portions; a second insulating layer formed on said first insulating layer; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in said wiring region; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in said wiring region, and extending at right angles to said first metal wiring layer, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and positioned above said diffusion wiring layer, for connecting said second metal wiring layer to said first metal wiring layer, said via contact hole having an axis aligned with that of said diffusion wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said diffusion wiring layer.
Claim 17
Dependent Claim
292 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a diffusion wiring layer formed in one major surface region of said semiconductor substrate, embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays and connected at one end to one of the input terminals of the corresponding unit cell; a first insulating layer formed on said semiconductor substrate, that portion of said first insulating layer which contacts said diffusion wiring layer is thinner than the other portions; a second insulating layer formed on said first insulating layer; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in said wiring region; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in said wiring region, and extending at right angles to said first metal wiring layer, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and positioned above said diffusion wiring layer, for connecting said second metal wiring layer to said first metal wiring layer, said via contact hole having an axis aligned with that of said diffusion wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said diffusion wiring layer.
Claim 18
Dependent Claim
22 words
A device according to claim 13, wherein said first and second metal wiring layers comprise aluminum layers formed by the polycell technique.
Claim 19
Dependent Claim
32 words
A device according to claim 13, wherein said first metal wiring layer is formed parallel to said cell arrays, and said second metal wiring layer is formed perpendicular to said cell arrays.
Claim 20
Dependent Claim
32 words
A device according to claim 13, wherein said first metal wiring layer is formed perpendicular to said cell arrays, and said second metal wiring layer is formed parallel with said cell arrays.
Claim 21
Dependent Claim
294 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a diffusion wiring layer formed in one major surface region of said semiconductor substrate, embedded in the corresponding unit cell, positioned in said wiring regiuon, extending at right angles to said cell arrays, and having two ends and a portion broader than the other portions, one of said ends being connected to one of the input terminals of the corresponding unit cell; a first insulating layer formed on said semiconductor substrate, that portion of said first insulating layer which contacts said diffusion wiring layer is thinner than the other portions; a second insulating layer formed on said first insulating layer; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in said wiring region; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in said wiring region, and extending at right angles to said first metal wiring layer, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and positioned above the broader portion of said diffusion wiring layer, for connecting said first metal wiring layer to said second metal wiring layer; and a contact hole firmed in said second insulating layers, for connecting said first metal wiring layer to said diffusion wiring layer.
Claim 22
Dependent Claim
294 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a diffusion wiring layer formed in one major surface region of said semiconductor substrate, embedded in the corresponding unit cell, positioned in said wiring regiuon, extending at right angles to said cell arrays, and having two ends and a portion broader than the other portions, one of said ends being connected to one of the input terminals of the corresponding unit cell; a first insulating layer formed on said semiconductor substrate, that portion of said first insulating layer which contacts said diffusion wiring layer is thinner than the other portions; a second insulating layer formed on said first insulating layer; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in said wiring region; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in said wiring region, and extending at right angles to said first metal wiring layer, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and positioned above the broader portion of said diffusion wiring layer, for connecting said first metal wiring layer to said second metal wiring layer; and a contact hole firmed in said second insulating layers, for connecting said first metal wiring layer to said diffusion wiring layer.
Claim 23
Dependent Claim
24 words
A device according to claim 17, wherein said first and second metal wiring layers comprise aluminum layers formed by using the polycell technique, respectively.
Claim 24
Dependent Claim
32 words
A device according to claim 17, wherein said first metal wiring layer is formed parallel to said cell arrays, and said second metal wiring layer is formed perpendicular to said cell arrays.
Claim 25
Dependent Claim
32 words
A device according to claim 17, wherein said first metal wiring layer is formed perpendicular to said cell arrays, and said second metal wiring layer is formed parallel with said cell arrays.
Claim 26
Dependent Claim
329 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a diffusion wiring layer formed in one major surface region of said semiconductor substrate, embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays, and having two ends, one of said ends being connected to one of the input terminals of the corresponding unit cell; a first insulating layer formed on said semiconductor substrate, that portion of said first insulating layer which contacts said diffusion wiring layer is thinner than the other portions; a second insulating layer formed on said first insulating layer; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in the wiring region, and having a portion broader than the other portions; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in the wiring region, extending at right angles to said first metal wiring layer, and having a portion broader than the other portions, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and above said diffusion wiring layer in a position corresponding to the broader portions of said first and second metal wiring layers, for connecting said second metal wiring layer to said first metal wiring layer, said via contact hole having an axis aligned with that of said diffusion wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said diffusion wiring layer.
Claim 27
Dependent Claim
329 words
A semiconductor IC device made by the polycell technique, comprising: a semiconductor substrate; various functional circuits formed in one major surface of said semiconductor substrate; a plurality of cell arrays each constituted by unit cells having said functional circuits; a wiring region formed between any two adjacent cell arrays; a diffusion wiring layer formed in one major surface region of said semiconductor substrate, embedded in the corresponding unit cell, positioned in said wiring region, extending at right angles to said cell arrays, and having two ends, one of said ends being connected to one of the input terminals of the corresponding unit cell; a first insulating layer formed on said semiconductor substrate, that portion of said first insulating layer which contacts said diffusion wiring layer is thinner than the other portions; a second insulating layer formed on said first insulating layer; a first metal wiring layer formed on that portion of said second insulating layer which is positioned in the wiring region, and having a portion broader than the other portions; a third insulating layer formed on said first metal wiring layer and said second insulating layer; a second metal wiring layer formed on that portion of said third insulating layer which is positioned in the wiring region, extending at right angles to said first metal wiring layer, and having a portion broader than the other portions, part of said second metal wiring layer being selectively connected to one of the output terminals of said unit cell; a via contact hole formed in said third insulating layer and above said diffusion wiring layer in a position corresponding to the broader portions of said first and second metal wiring layers, for connecting said second metal wiring layer to said first metal wiring layer, said via contact hole having an axis aligned with that of said diffusion wiring layer; and a contact hole formed in said second insulating layer, for connecting said first metal wiring layer to said diffusion wiring layer.
Claim 28
Dependent Claim
22 words
A device according to claim 21, wherein said first and second metal wiring layers comprise aluminum layers formed by the polycell technique.
Claim 29
Dependent Claim
32 words
A device according to claim 21, wherein said first metal wiring layer is formed parallel to said cell arrays, and said second metal wiring layer is formed perpendicular to said cell arrays.
Claim 30
Dependent Claim
32 words
A device according to claim 21, wherein said first metal wiring layer is formed perpendicular to said cell arrays, and said second metal wiring layer is formed parallel with said cell arrays.
References Cited (Backward Citations)
US3921282A
Cited
GB1433624A
Cited
JPS5216189A
Cited
US4161662A
Cited
JPS5387A
Cited
US4249193A
Cited
JPS571253A
Cited
JPS57190343A
Cited
JPS58219747A
Cited
JPS594138A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-12-28 | 1991-06-29 | 1991-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-28 | 1995-06-29 | 1995-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-28 | 1999-06-29 | 1999-12-29 | $7700.00 | Window Closed / Lapsed |