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US4683486A
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dRAM cell and array
Assignee: Texas Instruments Inc
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Filing: 1984-09-24
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Granted: 1987-07-28
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Expires: 2004-09-24
Abstract
Abstract A dRAM cell and array of cells, together with a method of fabrication, are disclosed wherein the cell includes one field effect transistor and one storage capacitor with both the transistor and the capacitor formed in a trench in a substrate. The transistor source, channel, and drain and one capacitor plate are formed in a layer of material inserted into the trench and insulated from the substrate; the gate and other capacitor plate are formed in the substrate trench sidewall. In preferred embodiments bit lines on the substrate surface connect to the inserted layer, and word lines on the substrate surface are formed as diffusions in the substrate which also form the gate. The trenches and cells are formed in the crossings of bit lines and word lines; the bit lines and the word lines form perpendicular sets of parallel lines.
Inventors
- 👤 Pallab K. Chatterjee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:20
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/39; H10B12/395
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
74 words
A device comprising: a substrate having a trench; an insulating layer formed on the walls of said trench; a semiconductive layer formed on said insulating layer, said semiconductive layer having a transistor formed in said trench, said transistor having a source, a drain and a channel, said drain serving as a node for storing charge; and a gate formed in said substrate adjacent to said insulating layer, said gate controlling current in said channel.
Claim 2
Independent Claim
74 words
A device comprising: a substrate having a trench; an insulating layer formed on the walls of said trench; a semiconductive layer formed on said insulating layer, said semiconductive layer having a transistor formed in said trench, said transistor having a source, a drain and a channel, said drain serving as a node for storing charge; and a gate formed in said substrate adjacent to said insulating layer, said gate controlling current in said channel.
Claim 3
Dependent Claim
13 words
A device as in claim 1 wherein said semiconductive layer comprises polycrystalline silicon.
Claim 4
Dependent Claim
20 words
A device as in claim 1 wherein said gate comprises a doped region of opposite conductivity type as said substrate.
Claim 5
Independent Claim
78 words
A device comprising: a crystalline semiconductor substrate having a trench; a silicon dioxide layer formed on the walls of said trench a polycrystalline silicon layer formed on said insulating layer, said semiconductive layer having a transistor formed in said trench, said transistor having a source, a drain and a channel, said drain serving as a node for storing charge; and a gate formed in said substrate adjacent to said insulating layer, said gate controlling current in said channel.
Claim 6
Independent Claim
78 words
A device comprising: a crystalline semiconductor substrate having a trench; a silicon dioxide layer formed on the walls of said trench a polycrystalline silicon layer formed on said insulating layer, said semiconductive layer having a transistor formed in said trench, said transistor having a source, a drain and a channel, said drain serving as a node for storing charge; and a gate formed in said substrate adjacent to said insulating layer, said gate controlling current in said channel.
Claim 7
Dependent Claim
20 words
A device as in claim 4 wherein said gate comprises a doped region of opposite conductivity type as said substrate.
Claim 8
Dependent Claim
133 words
A memory array comprising: a first plurality of parallel conductors formed on the surface of a substrate; a second plurality of parallel conductors formed on the surface of said substrate perpendicular to said first plurality of conductors but insulated therefrom; a plurality of memory cells formed substantially beneath the intersections of said first and second conductors, each of said memory cells including: a substrate having a trench; an insulating layer formed on the walls of said trench; a semiconductive layer formed on said insulating layer, said semiconductive layer having a transistor formed in said trench, said transistor having a source, a drain and a channel, said drain serving as a node for storing charge; and a gate formed in said substrate adjacent to said insulating layer, said gate controlling current in said channel.
Claim 9
Dependent Claim
133 words
A memory array comprising: a first plurality of parallel conductors formed on the surface of a substrate; a second plurality of parallel conductors formed on the surface of said substrate perpendicular to said first plurality of conductors but insulated therefrom; a plurality of memory cells formed substantially beneath the intersections of said first and second conductors, each of said memory cells including: a substrate having a trench; an insulating layer formed on the walls of said trench; a semiconductive layer formed on said insulating layer, said semiconductive layer having a transistor formed in said trench, said transistor having a source, a drain and a channel, said drain serving as a node for storing charge; and a gate formed in said substrate adjacent to said insulating layer, said gate controlling current in said channel.
Claim 10
Dependent Claim
14 words
A memory array as in claim 6 wherein said semiconductive layer comprises polycrystalline silicon.
Claim 11
Dependent Claim
21 words
A memory array as in claim 6 wherein said gate comprises a doped region of opposite conductivity type as said substrate.
Claim 12
Dependent Claim
137 words
A memory array comprising: a first plurality of parallel conductors formed on the surface of a crystalline semiconductor substrate; a second plurality of parallel conductors formed on the surface of said substrate perpendicular to said first plurality of conductors but insulated therefrom; a plurality of memory cells formed substantially beneath the intersections of said first and second conductors, each of said memory cells including: a trench formed in said substrate; a silicon dioxide layer formed on the walls of said trench; a polycrystalline silicon layer formed on said insulating layer, said semiconductive layer having a transistor formed in said trench, said transistor having a source, a drain and a channel, said drain serving as a node for storing charge; a gate formed in said substrate adjacent to said insulating layer, said gate controlling current in said channel.
Claim 13
Dependent Claim
137 words
A memory array comprising: a first plurality of parallel conductors formed on the surface of a crystalline semiconductor substrate; a second plurality of parallel conductors formed on the surface of said substrate perpendicular to said first plurality of conductors but insulated therefrom; a plurality of memory cells formed substantially beneath the intersections of said first and second conductors, each of said memory cells including: a trench formed in said substrate; a silicon dioxide layer formed on the walls of said trench; a polycrystalline silicon layer formed on said insulating layer, said semiconductive layer having a transistor formed in said trench, said transistor having a source, a drain and a channel, said drain serving as a node for storing charge; a gate formed in said substrate adjacent to said insulating layer, said gate controlling current in said channel.
Claim 14
Dependent Claim
14 words
A memory array as in claim 9 wherein said semiconductive layer comprises polycrystalline silicon.
Claim 15
Dependent Claim
20 words
A memory as in claim 9 wherein said gate comprises a doped region of opposite conductivity type as said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-27 | 1991-01-26 | 1991-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-27 | 1995-01-26 | 1995-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-27 | 1999-01-26 | 1999-07-28 | $7700.00 | Window Closed / Lapsed |