US4396930A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compact MOSFET device with reduced plurality of wire contacts
Assignee: Toshiba Corp
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Filing: 1980-08-06
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Granted: 1983-08-02
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Expires: 2000-08-06
Abstract
Abstract A semiconductor device and a method for manufacturing the same are disclosed wherein an insulating thin film is formed on the surface of a semiconductor substrate, a gate electrode region of conductivity type different from that of the semiconductor substrate is selectively formed within the substrate and contiguous with the surface of the substrate, and source and drain regions are formed at the upper portion of the insulating thin film so that the voltage applied to the gate electrode region is below the reverse-breakdown voltage across a PN junction between the semiconductor substrate and the gate electrode region and determines the electrical conductivity of the source and drain regions.
Inventors
- 👤 Yoshihisa Mizutani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:20
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10P30/208; H10P30/209; H10P30/21; H10P30/212; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/10; H10W20/00; H10W20/01; H10W20/021; H10W20/40
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
179 words
A semiconductor device comprising active elements which in turn comprise: a semiconductor substrate of a first conductivity type having at least one surface, an insulating thin film formed over the surface of said semiconductor substrate. a second conductivity type region selectively formed within said substrate and having a surface contiguous with at least a portion of the surface of said substrate, wherein said second conductivity type region is a gate, and a semiconductor layer formed over said second conductivity type region with said insulating thin film interposed between said semiconductor layer and said second conductivity type region to allow said semiconductor layer to at least partially overlap said second conductivity type region, a source region and a drain region formed in said semiconductor layer contiguous with the surface of said insulating thin film, the electrical conductivity of said semiconductor layer between said source and drain regions being effected by a voltage applied to said second conductivity region, said voltage being below the reverse-breakdown voltage across a PN junction formed by said semiconductor substrate and said second conductivity type region.
Claim 2
Dependent Claim
179 words
A semiconductor device comprising active elements which in turn comprise: a semiconductor substrate of a first conductivity type having at least one surface, an insulating thin film formed over the surface of said semiconductor substrate. a second conductivity type region selectively formed within said substrate and having a surface contiguous with at least a portion of the surface of said substrate, wherein said second conductivity type region is a gate, and a semiconductor layer formed over said second conductivity type region with said insulating thin film interposed between said semiconductor layer and said second conductivity type region to allow said semiconductor layer to at least partially overlap said second conductivity type region, a source region and a drain region formed in said semiconductor layer contiguous with the surface of said insulating thin film, the electrical conductivity of said semiconductor layer between said source and drain regions being effected by a voltage applied to said second conductivity region, said voltage being below the reverse-breakdown voltage across a PN junction formed by said semiconductor substrate and said second conductivity type region.
Claim 3
Dependent Claim
33 words
A semiconductor device as claimed in claim 1 wherein said gate region and said source region or said drain region are electrically connected through a contact hole formed in said insulating thin film.
Claim 4
Dependent Claim
198 words
A semiconductor device comprising a first transistor having active elements which in turn comprise: a semiconductor substrate of a first conductivity type having at least one surface, an insulating thin film over the surface of said semiconductor substrate, a gate region of a second conductivity type within said substrate and having a surface contiguous with at least a portion of the surface of said substrate, a semiconductor layer over the insulating thin film, and a source region and a drain region formed in said semiconductor layer over said gate region with said insulating thin film interposed between said source and drain regions and said gate region to allow said source and drain regions to at least partially overlap said gate region; and a second transistor having active elements which in turn comprise: a source or drain region in the surface of said semiconductor substrate, and a gate region formed in said semiconductor layer above said insulating thin film of said first transistor; wherein the gate of one of said first and second transistors and at least one of the source or drain regions of the other of the first and second transistors are formed integrally with each other.
Claim 5
Dependent Claim
198 words
A semiconductor device comprising a first transistor having active elements which in turn comprise: a semiconductor substrate of a first conductivity type having at least one surface, an insulating thin film over the surface of said semiconductor substrate, a gate region of a second conductivity type within said substrate and having a surface contiguous with at least a portion of the surface of said substrate, a semiconductor layer over the insulating thin film, and a source region and a drain region formed in said semiconductor layer over said gate region with said insulating thin film interposed between said source and drain regions and said gate region to allow said source and drain regions to at least partially overlap said gate region; and a second transistor having active elements which in turn comprise: a source or drain region in the surface of said semiconductor substrate, and a gate region formed in said semiconductor layer above said insulating thin film of said first transistor; wherein the gate of one of said first and second transistors and at least one of the source or drain regions of the other of the first and second transistors are formed integrally with each other.
Claim 6
Dependent Claim
187 words
A semiconductor device comprising a first transistor having active elements which in turn comprise: a semiconductor substrate of a first conductivity type having at least one surface, an insulating thin film over the surface of said semiconductor substrate, a semiconductor layer over the insulating thin film, a gate region of a second conductivity type within said substrate and contiguous with the surface of said substrate, and a source region and a drain region formed in said semiconductor layer over said gate region with said insulating thin film interposed between said source and drain regions and said gate region to allow said source and drain regions to at least partially overlap said gate region; and a second transistor having active elements which in turn comprise: source and drain regions in the surface of said semiconductor substrate, and a gate in said semiconductor layer over said insulating thin film of said first transistor; when the gate of one of said first and second transistors and at least one of the source and drain regions of the other of the first and second transistors are formed integrally with each other.
Claim 7
Dependent Claim
187 words
A semiconductor device comprising a first transistor having active elements which in turn comprise: a semiconductor substrate of a first conductivity type having at least one surface, an insulating thin film over the surface of said semiconductor substrate, a semiconductor layer over the insulating thin film, a gate region of a second conductivity type within said substrate and contiguous with the surface of said substrate, and a source region and a drain region formed in said semiconductor layer over said gate region with said insulating thin film interposed between said source and drain regions and said gate region to allow said source and drain regions to at least partially overlap said gate region; and a second transistor having active elements which in turn comprise: source and drain regions in the surface of said semiconductor substrate, and a gate in said semiconductor layer over said insulating thin film of said first transistor; when the gate of one of said first and second transistors and at least one of the source and drain regions of the other of the first and second transistors are formed integrally with each other.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-01 | 1987-01-31 | 1987-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-01 | 1991-01-31 | 1991-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-01 | 1995-01-31 | 1995-08-02 | $7700.00 | Window Closed / Lapsed |