Abstract In a package comprising a ceramic member so as to accommodate a semiconductor device, a composite metal body which comprises copper and either one of tungsten and molybdenum is brought into contact with the ceramic member. The composite metal body is provided by impregnating molten copper into a porous block of tungsten or molybdenum and changeable in a thermal expansion coefficient and a thermal conductivity by controlling an amount of copper. The composite metal block may be used as a support for supporting the semiconductor device and/or as a heat sink for dissipating heat radiated from the semiconductor device. Preferably, the composite metal body comprises, by weight, 1-30% of copper and 99-70% of tungsten or molybdenum.
A package for use in encapsulating a semiconductor device, said package comprising a first member of a ceramic material and a second member of composite material comprising by weight of about 1 to 30% of a copper portion and about 99 to 70% of a preselected material selected from the group consisting of tungsten and molybdenum in the form of a porous block, said porous block having been impregnated with said copper portion from the molten state of said copper.
Claim 2
Dependent Claim
80 words
A package for use in encapsulating a semiconductor device, said package comprising a first member of a ceramic material and a second member of composite material comprising by weight of about 1 to 30% of a copper portion and about 99 to 70% of a preselected material selected from the group consisting of tungsten and molybdenum in the form of a porous block, said porous block having been impregnated with said copper portion from the molten state of said copper.
Claim 3
Dependent Claim
43 words
The package of claim 1, wherein said second member has a principal surface having, in turn, a center area for supporting said semiconductor device and a peripheral area surrounding said center area, said first member contacting said second member on said peripheral area.