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Patent US4675713A successfully refreshed from Google Patents.
US4675713A
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MOS transistor
Assignee: Semiconductor Components Industries LLC
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Filing: 1985-08-12
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Granted: 1987-06-23
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Expires: 2005-08-12
Abstract
Abstract An improved MOS transistor and method for making that transistor are provided. The improved transistor is characterized by decreased size, improved switching speed, and improved reliability in inductive load use. The improved structure is achieved through the use of a low minority carrier injecting source region formed, for example, by providing a low barrier height metal silicide. The metal silicide source provides a source of majority carriers but little minority carrier injection and hence little parasitic bipolar transistor action.
Inventors
- 👤 Lewis E. Terry
- 👤 Emily M. Thompson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:44
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/141; H10D84/146; H10D30/00; H10D30/01; H10D30/021; H10D30/028; H10D30/0291; H10D30/0293; H10D64/00; H10D64/60; H10D64/64; H10D64/647; H10D30/0212; H10D64/66; H10D64/661; H10D64/662; H10D64/663; Y; Y10; Y10S; Y10S257/00; Y10S257/902
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
47 words
An MOS transistor comprising: a semiconductor body of a first conductivity type having a channel region therein; a drain region of opposite conductivity type forming a retifying PN junction with said body; and a source region formed in said body by a metal silicide contacting said body.
Claim 2
Dependent Claim
47 words
An MOS transistor comprising: a semiconductor body of a first conductivity type having a channel region therein; a drain region of opposite conductivity type forming a retifying PN junction with said body; and a source region formed in said body by a metal silicide contacting said body.
Claim 3
Dependent Claim
23 words
The MOS transistor of claim 1 wherein said metal silicide is selected to have a low barrier height with respect to said body.
Claim 4
Dependent Claim
31 words
The MOS transistor of claim 1 wherein siad body is P type and said metal silicide is selected from the group consisting of platinum silicide, iridium silicide, an d tungsten silicide.
Claim 5
Dependent Claim
103 words
An MOS transistor comprising: a silicon substrate of first conductivity type including a drain region and havig a surface; a drain electrode coupled to said drain region; a body region of opposite conductivity type formed in said drain region, intersecting said surface, and forming a PN junction with said drain region; a gate insulator overlying a portion of said body region, said portion comprising a channel region; a gate electrode overlying said gate insulator; a source region of metal silicide formed in and contacting said body region at said surface adjacent said channel region; and a source electrode coupled to said source region.
Claim 6
Dependent Claim
103 words
An MOS transistor comprising: a silicon substrate of first conductivity type including a drain region and havig a surface; a drain electrode coupled to said drain region; a body region of opposite conductivity type formed in said drain region, intersecting said surface, and forming a PN junction with said drain region; a gate insulator overlying a portion of said body region, said portion comprising a channel region; a gate electrode overlying said gate insulator; a source region of metal silicide formed in and contacting said body region at said surface adjacent said channel region; and a source electrode coupled to said source region.
Claim 7
Dependent Claim
13 words
The MOS transistor of claim 4 wherein said gate electrode comprises polycrystalline silicon.
Claim 8
Dependent Claim
17 words
The MOS transistor of claim 5 wherein said metal silicide is also formed on said gate electrode.
Claim 9
Dependent Claim
20 words
The MOS transistor of claim 6 further comprising an insulating material electrically separating said gate electrode and said source region.
Claim 10
Dependent Claim
16 words
The MOS transistor of claim 4 wherein said source electrode and said drain electrode comprise aluminum.
Claim 11
Dependent Claim
25 words
The MOS transistor of claim 4 wherein said silicon substrate further comprises a second surface and said drain electrode is postioned on said second surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-22 | 1990-12-22 | 1991-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-22 | 1994-12-22 | 1995-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-22 | 1998-12-22 | 1999-06-23 | $7700.00 | Window Closed / Lapsed |