Field effect transistor with improved withstand voltage characteristic

Claim 2

A field effect transistor, comprising: a semiconductor substrate of a first conductivity type, a drain region of a second conductivity type formed on one main surface of said semiconductor substrate, a source region of the second conductivity type formed annularly on said one main surface of said semiconductor substrate, said source region encompassing said drain region and spaced apart therefrom, a channel region formed on said one main surface of said semiconductor substrate between said drain region and said source region, wherein a portion of said channel region in the vicinity of said drain region constitutes a second channel region, whereas a remaining portion of said channel region constitutes a first channel region, a first annular gate encompassing said drain region bridging above said first channel region and said source, a first insulating thin film formed between said first annular gate and said first channel region, a second annular gate encompassing said drain region and above said second channel region through a second insulating thin film and bridging above said first gate and said drain region, said first and second insulating thin films separating the first and second gates respectively from the first and second channel regions formed in the substrate being thin films having substantially similar thicknesses, said second annular gate electrically connected to said drain region, voltage supply means coupled to said drain region and to said second annular gate for supplying a predetermined voltage to said drain region for forming an inversion layer in the second channel region, and an isolating film formed contiguous to said source region at the side opposite to said channel region.

Claim 3

A field effect transistor in accordance with claim 1, wherein an impurity of said first conductivity type is diffused beneath said isolating film into said semiconductor substrate, wherein the concentration of said impurity is selected to be larger than that of an impurity of said first conductivity type of said channel region.

Claim 4

A semiconductor memory device, comprising: a first field effect transistor, comprising a first semiconductor substrate of a first conductivity type, a drain region of a second conductivity type formed on one main surface of said semiconductor substrate, a source region of a second conductivity type formed annularly on one main surface of said semiconductor substrate encompassing said drain region and spaced apart therefrom, a channel region formed on one main surface of said semiconductor substrate between said drain region and said source region, wherein a portion of said channel region in the vicinity of said drain region constitutes a second channel region, whereas a remaining portion said channel region constitutes a first channel region, the length of said second channel region is shorter than that of said first channel region, a first annular gate formed encompassing said drain region bridging above said first channel region and said source region, with a first insulating film formed between said first annular gate and said first channel region, a second annular gate formed encompassing said drain region and above said second channel region through a second insulating film and bridging above said first gate and said drain region, said second annular gate being electrically connected to said drain said first and second insulating films separating the first and second gates respectively from the first and second channel regions formed in the substrate being thin films having substantially similar thicknesses, and an isolating film formed contiguous to said source region at the side opposite to said channel region, a second field effect transistor including source, a gate, and a drain and having said drain of said second field effect transistor connected to said source region of said first field effect transistor, and a third field effect transistor for a memory including source, a gate and a drain and having said drain of said third field effect transistor connected to said source of said second field effect transistor.

Claim 5

A semiconductor memory device, comprising: a first field effect transistor, comprising a first semiconductor substrate of a first conductivity type, a drain region of a second conductivity type formed on one main surface of said semiconductor substrate, a source region of a second conductivity type formed annularly on one main surface of said semiconductor substrate encompassing said drain region and spaced apart therefrom, a channel region formed on one main surface of said semiconductor substrate between said drain region and said source region, wherein a portion of said channel region in the vicinity of said drain region constitutes a second channel region, whereas a remaining portion said channel region constitutes a first channel region, the length of said second channel region is shorter than that of said first channel region, a first annular gate formed encompassing said drain region bridging above said first channel region and said source region, with a first insulating film formed between said first annular gate and said first channel region, a second annular gate formed encompassing said drain region and above said second channel region through a second insulating film and bridging above said first gate and said drain region, said second annular gate being electrically connected to said drain said first and second insulating films separating the first and second gates respectively from the first and second channel regions formed in the substrate being thin films having substantially similar thicknesses, and an isolating film formed contiguous to said source region at the side opposite to said channel region, a second field effect transistor including source, a gate, and a drain and having said drain of said second field effect transistor connected to said source region of said first field effect transistor, and a third field effect transistor for a memory including source, a gate and a drain and having said drain of said third field effect transistor connected to said source of said second field effect transistor.

Claim 6

A semiconductor memory device in accordance with claim 3, wherein an impurity of said first conductivity type is diffused beneath said isolating film into said semiconductor substrate of said first field effect transistor, wherein the concentration of said impurity is selected to be larger than that of an impurity of said first conductivity type of said channel region.

Claim 7

A semiconductor memory device in accordance with claim 3, wherein the length of the said first channel region of said first field effect transistor is larger than 5.5μ.

Claim 8

A field effect transistor comprising: a semiconductor substrate of a first conductivity type, a drain region of a second conductivity type formed on one main surface of said semiconductor substrate, a source region of the second conductivity type formed annularly on said one main surface of said semiconductor substrate, said source region encompassing said drain region and spaced apart therefrom, a channel region formed on said one main surface of said semiconductor substrate between said drain region and said source region, wherein a portion of said channel region in the vicinity of said drain region constitutes a second channel region, whereas a remaining portion of said channel region constitutes a first channel region, said second channel region having a length in a direction from said drain region to said source region which is shorter than a length of said first channel region, a first annular gate formed encompassing said drain region bridging above said first channel region and said source, a region with a first insulating film formed between said first annular gate and said first channel region, a second annular gate formed encompassing said drain region and above said second channel region through a second insulating film and bridging above said first gate and said drain region, said first and second insulating films separating the first and second gates respectively from the first and second channel regions formed in the substrate being thin films having substantially similar thicknesses, voltage supply means coupled to said drain region for supplying a predetermined voltage to said drain region for forming an inversion layer in the second channel region, and an isolating film formed contiguous to said source region at the side opposite to said channel region.

Claim 9

A field effect transistor comprising: a semiconductor substrate of a first conductivity type, a drain region of a second conductivity type formed on one main surface of said semiconductor substrate, a source region of the second conductivity type formed annularly on said one main surface of said semiconductor substrate, said source region encompassing said drain region and spaced apart therefrom, a channel region formed on said one main surface of said semiconductor substrate between said drain region and said source region, wherein a portion of said channel region in the vicinity of said drain region constitutes a second channel region, whereas a remaining portion of said channel region constitutes a first channel region, said second channel region having a length in a direction from said drain region to said source region which is shorter than a length of said first channel region, a first annular gate formed encompassing said drain region bridging above said first channel region and said source, a region with a first insulating film formed between said first annular gate and said first channel region, a second annular gate formed encompassing said drain region and above said second channel region through a second insulating film and bridging above said first gate and said drain region, said first and second insulating films separating the first and second gates respectively from the first and second channel regions formed in the substrate being thin films having substantially similar thicknesses, voltage supply means coupled to said drain region for supplying a predetermined voltage to said drain region for forming an inversion layer in the second channel region, and an isolating film formed contiguous to said source region at the side opposite to said channel region.

Claim 10

A field effect transistor as recited in claim 1 further comprising a gate oxide film region between said first gate and said one main surface of said semiconductor substrate, in combination with a structural arrangement for incorporating thin layers of said gate oxide film in said field effect transistor and for providing to said field effect transistor an increased withstand voltage characteristic.

Claim 11

A field effect transistor as recited in claim 7 wherein said structural arrangement includes a length of said first channel region which is longer than the length of the second channel region; and an electrical connection between the second annular gate and the drain region, together with an impurity of said first conductivity type provided in said semiconductor substrate beneath said isolating film and having an impurity concentration greater than that of said channel region.

Claim 12

A field effect transistor, comprising: a semiconductor substrate of a first conductivity type, a drain region of a second conductivity type formed on one main surface of said semiconductor substrate, a source region of the second conductivity type formed annularly on said one main surface of said semiconductor substrate, said source region encompassing said drain region and spaced apart therefrom, a channel region formed on said one main surface of said semiconductor substrate between said drain region and said source region, wherein a portion of said channel region in the vicinity of said drain region constitutes a second channel region, whereas a remaining portion of said channel region constitutes a first channel region, a first annular gate formed encompassing said drain region bridging above said first channel region and said source, a region with a first insulating film formed between said first annular gate and said first channel region, a second annular gate formed encompassing said drain region and above said second channel region through a second insulating film and bridging above said first gate and said drain region, said first and second insulating films separating the first and second gates respectively from the first and second channel regions formed in the substrate being thin films having substantially similar thicknesses, means for applying a predetermined voltage to said second annular gate for forming an inversion layer immediately beneath said second annular gate in the second channel region, and an isolating film formed contiguous to said source region at the side opposite to said channel region, whereby an increased withstand voltage is provided to the transistor.

Claim 13

A field effect transistor, comprising: a semiconductor substrate of a first conductivity type, a drain region of a second conductivity type formed on one main surface of said semiconductor substrate, a source region of the second conductivity type formed annularly on said one main surface of said semiconductor substrate, said source region encompassing said drain region and spaced apart therefrom, a channel region formed on said one main surface of said semiconductor substrate between said drain region and said source region, wherein a portion of said channel region in the vicinity of said drain region constitutes a second channel region, whereas a remaining portion of said channel region constitutes a first channel region, a first annular gate formed encompassing said drain region bridging above said first channel region and said source, a region with a first insulating film formed between said first annular gate and said first channel region, a second annular gate formed encompassing said drain region and above said second channel region through a second insulating film and bridging above said first gate and said drain region, said first and second insulating films separating the first and second gates respectively from the first and second channel regions formed in the substrate being thin films having substantially similar thicknesses, means for applying a predetermined voltage to said second annular gate for forming an inversion layer immediately beneath said second annular gate in the second channel region, and an isolating film formed contiguous to said source region at the side opposite to said channel region, whereby an increased withstand voltage is provided to the transistor.

Claim 14

A field effect transistor as recited in claim 9 wherein said means for applying said predetermined voltage to said second annular gate means comprises connecting means for electrically connecting said second annular gate to said drain region.

Claim 15

A field effect transistor as recited in claim 10 wherein said first and second annular gates are formed in a non-connected arrangement.

Claim 16

A field effect transistor as recited in claim 1 further comprising means for connecting said drain region and said second gate region to a common electrical potential.

Claim 17

A field effect transistor in accordance with claim 1, wherein the length of said first channel region is larger than 5.5μ.

Claim 18

A semiconductor memory device, comprising: a first field effect transistor, comprising a semiconductor substrate of a first conductivity type, a drain region of a second conductivity type formed on one main surface of said semiconductor substrate, a source region of said second conductivity type formed annularly on said one main surface of said semiconductor substrate encompassing said drain region and spaced apart therefrom, a channel region formed on said one main surface of said semiconductor substrate between said drain region and said source region, wherein a portion of said channel region in the vicinity of said drain region constitutes a second channel region, whereas a remaining portion of said channel region constitutes a first channel region, the length of said second channel region is shorter than that of said first channel region, a first annular gate encompassing said drain region and bridging above said first channel region and said source region, with a first insulating film formed between said first annular gate and said first channel region, a second annular gate encompassing said drain region and above said second channel region, said second gate separate from said second channel region by a second insulating film and bridging above said first gate and said drain region, said second annular gate being electrically connected to said drain region, said first and second insulating films separating the first and second gates respectively from the first and second channel regions formed in the substrate being thin films having substantially similar thicknesses, means coupled to said drain region for forming an inversion layer in the second channel region, and an isolating film formed contiguous to said source region at the side opposite to said channel region, a second field effect transistor including a source, a gate, and a drain and having said drain of said second field effect transistor connected to said source region of said first field effect transistor, and a third field effect transistor for a memory including a source, a gate and a drain and having said drain of said third field effect transistor connected to said source of said second field effect transistor.

Claim 19

A semiconductor memory device, comprising: a first field effect transistor, comprising a semiconductor substrate of a first conductivity type, a drain region of a second conductivity type formed on one main surface of said semiconductor substrate, a source region of said second conductivity type formed annularly on said one main surface of said semiconductor substrate encompassing said drain region and spaced apart therefrom, a channel region formed on said one main surface of said semiconductor substrate between said drain region and said source region, wherein a portion of said channel region in the vicinity of said drain region constitutes a second channel region, whereas a remaining portion of said channel region constitutes a first channel region, the length of said second channel region is shorter than that of said first channel region, a first annular gate encompassing said drain region and bridging above said first channel region and said source region, with a first insulating film formed between said first annular gate and said first channel region, a second annular gate encompassing said drain region and above said second channel region, said second gate separate from said second channel region by a second insulating film and bridging above said first gate and said drain region, said second annular gate being electrically connected to said drain region, said first and second insulating films separating the first and second gates respectively from the first and second channel regions formed in the substrate being thin films having substantially similar thicknesses, means coupled to said drain region for forming an inversion layer in the second channel region, and an isolating film formed contiguous to said source region at the side opposite to said channel region, a second field effect transistor including a source, a gate, and a drain and having said drain of said second field effect transistor connected to said source region of said first field effect transistor, and a third field effect transistor for a memory including a source, a gate and a drain and having said drain of said third field effect transistor connected to said source of said second field effect transistor.

Claim 20

A field effect transistor as recited in claim 1 wherein said first and second insulating films between said first annular gate and said one main surface of said semiconductor substrate, and between said second annular gate and said one main surface of said semiconductor substrate are relatively thin, further comprising a third relatively thin insulating film between a portion of said second annular gate bridging above said first annular gate and said first annular gate bridged thereby, whereby an increased withstand voltage characteristic is provided to said field effect transistor.

Claim 21

A field effect transistor as recited in claim 15 wherein said second relatively thin insulating film has a thickness sufficiently thin to permit formation of said inversion layer in said second channel region.

Claim 22

A field effect transistor as recited in claim 16 wherein said first relatively thin insulating film has a thickness of approximately 700 angstroms, said second relatively thin insulating film has a thickness of approximately 1100 angstroms, and said third relatively thin insulating film has a thickness of approximately 1300 angstroms.

Claim 23

A field effect transistor as recited in claim 1 wherein said channel regions under said first and second annular gates are substantially annular, said second region including said inversion layer formed therein is in contact at an inner diameter thereof with said drain region and at an outer diameter thereof with said first channel region.

Claim 24

A field effect transistor as recited in claim 15 wherein said second annular gate includes a first portion vertically displaced from an upper portion of said first annular gate and a second portion horizontally displaced from said first annular gate, said third relatively thin insulating film provided in a substantially vertical space between said first annular gate and said first portion of said second annular gate and in a substantially horizontal space between said first annular gate and said second portion of said second annular gate.

Claim 25

A field effect transistor as recited in claim 1 wherein said thicknesses of said first and second insulating thin films are within a range of approximately 50% of one another.

Claim 26

A field effect transistor as recited in claim 20 wherein said thicknesses of said first and second insulating thin films are within a range of approximately 40% of one another.

Claim 27

A field effect transistor as recited in claim 1 wherein said first insulating thin film has a thickness of approximately 700 angstroms and said second insulating thin film has a thickness of approximately 1100 angstroms.