Patent US1839488A successfully refreshed from Google Patents.
Patent US4648937A successfully refreshed from Google Patents.
US4648937A
Expired / Lapsed
US
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Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer
Assignee: International Business Machines Corp
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Filing: 1985-10-30
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Granted: 1987-03-10
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Expires: 2005-10-30
Abstract
Abstract In the process of sidewall image transfer, a vertical step is etched in some material and then a conformal layer of some other material is deposited over the step. By reactive ion etching the conformal material can be anisotropically etched which results in a sidewall spacer of the second material on the vertical surfaces of the step material. By removing the step material, the free standing spacer can then be used as a mask. One area in which improvement is desired is in the selectivity of the etch of the spacer to the material immediately below it. Because of the limited number of materials and reactive ion etching gases it is difficult to avoid an etch in the underlying layer as the sidewall spacer is formed. A suitable etch stop is employed beneath the step material to avoid the problem. Because of the usual technology, the spacer material is plasma deposited silicon nitride and the step material is photoresist. Polysilicon, aluminum or similar metal is employed as an etch stop, since it is not by a CF 4 based gas which is used to form the spacer.
Inventors
- 👤 Seiki Ogura
- 👤 Jacob Riseman
- 👤 Nivo Rovedo
- 👤 Ronald N. Schulz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:57
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P76/405; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945; Y10S438/948; Y10S438/951
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
168 words
A method of forming a sub-micrometer dimensional mask structure on a semiconductor substrate comprising: forming an insulative layer on a major surface of said substrate; forming a stop layer on said insulative layer; forming a step material layer at selected areas on said stop layer; covering said insulative layer and said step material with a spacer material; removing by selective etching, portions of said spacer material to define a vertical spacer at locations where said mask structure is to be present, said selective etching being positively stopped by said stop layer; removing by selective etching exposed portions of said stop layer to define a pattern of spacers without any etching of the insulative layer; removing said insulative layer to define a pattern of spacers on said major surface of said substrate having a tiered structure of spacer material, stop material and insulative material; and removing said spacer material and the remaining stop material under said spacer material to leave a sub-micrometer dimensional mask structure of remaining insulative material.
Claim 2
Independent Claim
168 words
A method of forming a sub-micrometer dimensional mask structure on a semiconductor substrate comprising: forming an insulative layer on a major surface of said substrate; forming a stop layer on said insulative layer; forming a step material layer at selected areas on said stop layer; covering said insulative layer and said step material with a spacer material; removing by selective etching, portions of said spacer material to define a vertical spacer at locations where said mask structure is to be present, said selective etching being positively stopped by said stop layer; removing by selective etching exposed portions of said stop layer to define a pattern of spacers without any etching of the insulative layer; removing said insulative layer to define a pattern of spacers on said major surface of said substrate having a tiered structure of spacer material, stop material and insulative material; and removing said spacer material and the remaining stop material under said spacer material to leave a sub-micrometer dimensional mask structure of remaining insulative material.
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein said insulative layer is silicon dioxide.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein said stop layer is a metal unaffected by an etchant used to remove said spacer material.
Claim 5
Dependent Claim
13 words
The method of claim 3, wherein said stop layer is formed of aluminum.
Claim 6
Dependent Claim
12 words
The method of claim 1, wherein said step material is a photoresist.
Claim 7
Dependent Claim
19 words
The method of claim 1, wherein said spacer material is plasma deposited Si x N y O z .
Claim 8
Dependent Claim
37 words
The method of claim 1, wherein said selective etching comprises the steps of the first etching said spacer material by CF 4 etchant followed by a chlorine anisotropic etch of said stop layer by reactive ion etching.
Claim 9
Dependent Claim
15 words
The method of claim 1, wherein said insulative layer is removed by reactive ion etching.
Claim 10
Dependent Claim
27 words
The method of claim 1, wherein said remaining stop material is removed by a wet etch to undercut said spacer while not affecting said remaining insulative material.
Claim 11
Dependent Claim
16 words
The method of claim 1 further comprising the step of forming sub-micrometer structures in said substrate.
Claim 12
Dependent Claim
11 words
The method of claim 1, wherein said stop layer is polysilicon.
Claim 13
Dependent Claim
33 words
The method of claim 1, wherein the step of removing remaining stop material in turn lifts off said spacer material to define a sub-micrometer mask structure of insulative material on a polysilicon substrate.
Claim 14
Dependent Claim
28 words
The method of claim 1, wherein said spacer material and said remaining stop material are separately removed with said remaining stop material removed when said substrate is etched.
Claim 15
Independent Claim
150 words
A method of forming a sub-micrometer trench structure on a semiconductor substrate comprising; forming an insulative layer on a major surface of said substrate; forming a metallic stop layer on said insulative layer; forming a step material layer at selected areas on said metallic stop layer; covering said insulative layer and said step material with a spacer material; removing by selective etching, portions of said spacer material to define a vertical spacer at locations where said trench structure is to be created, said selective etching being positively stopped by said stop layer; exposing said spacer and said metallic stop layer to an oxidizing environment to form a passivated layer of metallic stop material except under said spacer; removing said spacer to expose remaining unpassivated stop material; and etching said substrate using said passivated stop material as a mask to form narrow patterns by removing said remaining unpassivated metallic stop material.
Claim 16
Independent Claim
150 words
A method of forming a sub-micrometer trench structure on a semiconductor substrate comprising; forming an insulative layer on a major surface of said substrate; forming a metallic stop layer on said insulative layer; forming a step material layer at selected areas on said metallic stop layer; covering said insulative layer and said step material with a spacer material; removing by selective etching, portions of said spacer material to define a vertical spacer at locations where said trench structure is to be created, said selective etching being positively stopped by said stop layer; exposing said spacer and said metallic stop layer to an oxidizing environment to form a passivated layer of metallic stop material except under said spacer; removing said spacer to expose remaining unpassivated stop material; and etching said substrate using said passivated stop material as a mask to form narrow patterns by removing said remaining unpassivated metallic stop material.
Claim 17
Dependent Claim
12 words
The method of claim 14, wherein said metallic stop material is aluminum.
Claim 18
Dependent Claim
28 words
The method of claim 14, wherein said spacer is Si 3 N 4 and said step of removing said spacer is by hot H 3 PO 4 etch.
Claim 19
Dependent Claim
18 words
The method of claim 14, wherein said metallic stop layer is aluminum and said oxidizing environment is anodization.
Claim 20
Dependent Claim
12 words
The method of claim 14, wherein said stop material is a photoresist.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-09 | 1990-09-08 | 1991-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-09 | 1994-09-08 | 1995-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-09 | 1998-09-08 | 1999-03-10 | $7700.00 | Window Closed / Lapsed |