Patent US3466989A successfully refreshed from Google Patents.
Patent US4646126A successfully refreshed from Google Patents.
US4646126A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1984-08-08
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Granted: 1987-02-24
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Expires: 2004-08-08
Abstract
Abstract Disclosed is a semiconductor device in which IC chips, tested and evaluated as good, are mounted on a silicon substrate, and interconnection wiring layers and pads for IC chips are provided on the substrate with an insulation film interposed therebetween.
Inventors
- 👤 Tetsuya Iizuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:51
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/601; H10W70/00; H10W70/20; H10W70/24; H10W70/26; H10W70/60; H10W70/67; H10W70/69; H10W70/698; H10W72/00; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/90; H10W72/951; H10W72/952; H10W72/981; H10W72/983; H10W90/00; H10W90/701; H10W90/751; H10W90/753; H10W90/754
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
137 words
A semiconductor device comprising: a semiconductor substrate; an IC chip mounted directly on a first region of said substrate; a first insulation film formed on said substrate, said first insulation film having one region thinner than any other region; an interconnection wiring layer serving as a power line formed on said one region of said first insulation film, said first insulation film and said interconnection wiring layer and said substrate forming a capacitor to serve as a filter for reducing noise coming from said power line; a second insulation film formed on said interconnection wiring layer; a conductive bonding layer for forming an electrical connection for said IC chip, said conductive bonding layer being formed on said second insulation film above said interconnection wiring layer; and means for connecting said IC chip and said conductive bonding layer.
Claim 2
Dependent Claim
137 words
A semiconductor device comprising: a semiconductor substrate; an IC chip mounted directly on a first region of said substrate; a first insulation film formed on said substrate, said first insulation film having one region thinner than any other region; an interconnection wiring layer serving as a power line formed on said one region of said first insulation film, said first insulation film and said interconnection wiring layer and said substrate forming a capacitor to serve as a filter for reducing noise coming from said power line; a second insulation film formed on said interconnection wiring layer; a conductive bonding layer for forming an electrical connection for said IC chip, said conductive bonding layer being formed on said second insulation film above said interconnection wiring layer; and means for connecting said IC chip and said conductive bonding layer.
Claim 3
Dependent Claim
18 words
A semiconductor device according to claim 1, in which said interconnection wiring layer is made of polycrystalline silicon.
Claim 4
Dependent Claim
17 words
A semiconductor device according to claim 1, in which said interconnection wiring layer is made of aluminum.
Claim 5
Dependent Claim
158 words
A semiconductor device comprising: a semiconductor substrate; an IC chip mounted directly on a first region of said substrate; a first insulation film formed on said substrate, said first insulation film having one region thinner than any other region; an interconnection wiring layer, located in close proximity to said first region of said substrate wherein said IC chip is placed, said interconnection wiring layer serving as a power line formed on said one region of said first insulation film, said first insulation film and said interconnection wiring layer and said substrate forming a capacitor to serve as a filter for reducing noise coming from said power line; a second insulation film formed on said interconnection wiring layer; a conductive bonding layer for forming an electrical connection for said IC chip, said conductive bonding layer being formed on said second insulation film above said interconnection wiring layer; and means for connecting said IC chip and said conductive bonding layer.
Claim 6
Dependent Claim
158 words
A semiconductor device comprising: a semiconductor substrate; an IC chip mounted directly on a first region of said substrate; a first insulation film formed on said substrate, said first insulation film having one region thinner than any other region; an interconnection wiring layer, located in close proximity to said first region of said substrate wherein said IC chip is placed, said interconnection wiring layer serving as a power line formed on said one region of said first insulation film, said first insulation film and said interconnection wiring layer and said substrate forming a capacitor to serve as a filter for reducing noise coming from said power line; a second insulation film formed on said interconnection wiring layer; a conductive bonding layer for forming an electrical connection for said IC chip, said conductive bonding layer being formed on said second insulation film above said interconnection wiring layer; and means for connecting said IC chip and said conductive bonding layer.
Claim 7
Dependent Claim
15 words
A semiconductor device according to claim 1, in which said substrate is made of silicon.
Claim 8
Dependent Claim
16 words
A semiconductor device according to claim 5, in which said substrate has a high impurity concentration.
Claim 9
Dependent Claim
15 words
A semiconductor device according to claim 4, in which substrate has a high impurity concentration.
Claim 10
Dependent Claim
15 words
A semiconductor device according to claim 4, in which said substrate is made of silicon.
Claim 11
Dependent Claim
18 words
A semiconductor device according to claim 4, in which said interconnection wiring layer is made of polycrystalline silicon.
Claim 12
Dependent Claim
17 words
A semiconductor device according to claim 4, in which said interconnection wiring layer is made of aluminum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-23 | 1990-08-25 | 1991-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-23 | 1994-08-25 | 1995-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-23 | 1998-08-25 | 1999-02-24 | $7700.00 | Window Closed / Lapsed |