Patent US4645546A successfully refreshed from Google Patents.
US4645546A
Expired / Lapsed
US
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Semiconductor substrate
Assignee: Toshiba Corp
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Filing: 1985-07-12
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Granted: 1987-02-24
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Expires: 2005-07-12
Abstract
Abstract Disclosed is a silicon semiconductor substrate for a semiconductor integrated circuit such as LSI or VLSI. The silicon semiconductor substrate has an oxygen concentration ranging from 3×10 17 cm -3 to 7×10 17 cm -3 and a gettering layer on its backside. This gettering layer may comprise a nonsingle crystalline silicon layer such as polycrystalline silicon layer or amorphous silicon layer, or a layer having stacking fault density of more than 3×10 4 cm -2 .
Inventors
- 👤 Yoshiaki Matsushita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:39
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/03; Y; Y10; Y10S; Y10S148/00; Y10S148/06
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
52 words
A semiconductor device comprising a silicon semiconductor substrate whose oxygen concentration ranges between 3×10 17 cm -3 to 7×10 17 cm -3 and whose backside is provided with a gettering layer of a nonsingle crystalline silicon layer, the gettering layer having a stacking fault density greater than 3×10 4 cm -2 .
Claim 2
Dependent Claim
52 words
A semiconductor device comprising a silicon semiconductor substrate whose oxygen concentration ranges between 3×10 17 cm -3 to 7×10 17 cm -3 and whose backside is provided with a gettering layer of a nonsingle crystalline silicon layer, the gettering layer having a stacking fault density greater than 3×10 4 cm -2 .
Claim 3
Dependent Claim
21 words
The silicon semiconductor substrate according to claim 1, wherein said nonsingle crystalline silicon layer is formed of a polycrystalline silicon layer.
Claim 4
Dependent Claim
21 words
The silicon semiconductor substrate according to claim 1, wherein said nonsingle crystalline silicon layer is composed of an amorphous silicon layer.
Claim 5
Dependent Claim
21 words
The silicon semiconductor substrate according to claim 1, wherein said nonsingle crystalline silicon layer has a greater thickness than 1000 Å.
Claim 6
Dependent Claim
22 words
The silicon semiconductor substrate according to claim 1, wherein said stacking fault has a greater density than 1×10 5 cm -2 .
Claim 7
Dependent Claim
20 words
The silicon semiconductor substrate according to claim 1, whose oxygen concentration ranges between 3.2 to 6.8×10 17 cm -3 .
Claim 8
Independent Claim
79 words
A method of manufacturing a silicon semiconductor substrate comprising the steps of: (a) growing a semiconductor substrate by the magnetic Czochralski method; (b) providing an oxygen concentration in the semiconductor substrate in the range of about 3×10 17 cm -3 to 7×10 17 cm -3 ; and (c) forming a gettering layer of a nonsingle crystalline silicon layer on the backside of the substrate, the gettering layer having a stacking fault density greater than 3×10 4 cm -2 .
Claim 9
Independent Claim
79 words
A method of manufacturing a silicon semiconductor substrate comprising the steps of: (a) growing a semiconductor substrate by the magnetic Czochralski method; (b) providing an oxygen concentration in the semiconductor substrate in the range of about 3×10 17 cm -3 to 7×10 17 cm -3 ; and (c) forming a gettering layer of a nonsingle crystalline silicon layer on the backside of the substrate, the gettering layer having a stacking fault density greater than 3×10 4 cm -2 .
Claim 10
Dependent Claim
20 words
The method according to claim 7, wherein said stacking fault has a density greater than 1×10 5 cm -2 .
Claim 11
Dependent Claim
29 words
The method according to claim 7, wherein the oxygen concentration in the semiconductor substrate is in the range of 3.2×10 17 cm -3 to 6.8×10 17 cm -3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-23 | 1990-08-25 | 1991-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-23 | 1994-08-25 | 1995-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-23 | 1998-08-25 | 1999-02-24 | $7700.00 | Window Closed / Lapsed |