US3811975A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device and device manufactured by the method
Assignee: US Philips Corp
•
Filing: 1971-12-16
•
Granted: 1974-05-21
•
Expires: 1991-12-16
Abstract
Abstract A METHOD OF GETTERING A SEMICONDUCTOR DEVICE HAVING AN INSULATING LAYER OF WHICH AT LEAST A PART MUST NOT BE COVERED WITH A GETTERING MATERIAL, FOR EXAMPLE WITH PHOSPHORSILICATE GLASS. AT THE GETTERING TEMPERATURE. ACCORDING TO THE INVENTION, THE GETTERING MATERIAL IS PROVIDED ON THE WHOLE SEMICONDUCTOR BODY AND ON THE INSULATING LAYER AT SUCH A LOW TEMPERATURE THAT SUBSTANTIALLY NO GETTERING OCCURS, AND THE GETTERING MATERIAL IS THEN REMOVED FROM AT LEAST A PART OF THE INSULATING LAYER, AFTER WHICH THE GETTERING STEP IS CARRIED OUT AS THE LAST TREATMENT CARRIED OUT AT HIGH TEMPERATURE. APPLICATION IN PARTICULAR IN GETTERING MOS TRANSISTORS.
Inventors
- 👤 Lierop J Van
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:11
CPC Classifications
H; H10; H10D; H10D99/00; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/06
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-05-20 | 1977-11-19 | 1978-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-05-20 | 1981-11-19 | 1982-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-05-20 | 1985-11-19 | 1986-05-21 | $7700.00 | Window Closed / Lapsed |