US4639892A
Expired / Lapsed
US
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Semiconductor read-only memory device
Assignee: Mitsubishi Electric Corp
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Filing: 1983-11-30
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Granted: 1987-01-27
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Expires: 2003-11-30
Abstract
Abstract A semiconductor read-only memory device includes first and second MOS field effect mode transistors (MOSFET) as memory elements storing either one of binary values of binary information. The first MOSFET has such a relatively long effective gate length that it becomes conductive upon receipt of a first relatively high gate voltage applied thereto as a memory selection signal and becomes non-conductive upon receipt of a second relatively low gate voltage. The second MOSFET, on the other hand, has such a relatively short effective gate length that it becomes conductive whether the first or second gate voltage is applied thereto.
Inventors
- 👤 Shigeo Mizugaki
- 👤 Tsunenori Umeki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:41
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/14; G11C17/16
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
294 words
A semiconductor read-only memory device having at least first and second different types of MOS field effect transistor means for storage of different values of data bits, said first and second types of MOS transistor means formed on a substrate and in electrical connection with each other, each transistor means having a gate electrode means on a major surface of said substrate defining a gate area therein, said first type of MOS transistor means including two-level turn on means for causing said type of MOS field effect transistor to be turned on in response to application of either of a first or second different voltage level to the gate electrode means thereof, said two-level turn on means comprising a structural arrangement including double diffusion deep and shallow drain and sink regions with substantial lateral diffusion expansion regions, said lateral diffusion exapnsion regions providing a reduced effective gate length, said reduced effective gate length being substantially shorter than the width of said gate electrode means thereof for simulating a depletion type MOS transistor independently of channel doping thereof, said second type of MOS transistor means including on-off means for causing said second type of MOS field effect transistor to be turned on in response to application of said first voltage level to the gate electrode means thereof and to be turned off in response to application of said second voltage level to the gate electrode means thereof, said on-off means comprising a structural arrangement including a graded drain structure with deep diffusion drain and sink regions and shallow diffusion regions at least adjacent said gate electrode means thereof thereby minimizing reduction of effective gate length and providing a substantially longer effective gate length than the effective gate length of said first type of transistor means.
Claim 2
Dependent Claim
294 words
A semiconductor read-only memory device having at least first and second different types of MOS field effect transistor means for storage of different values of data bits, said first and second types of MOS transistor means formed on a substrate and in electrical connection with each other, each transistor means having a gate electrode means on a major surface of said substrate defining a gate area therein, said first type of MOS transistor means including two-level turn on means for causing said type of MOS field effect transistor to be turned on in response to application of either of a first or second different voltage level to the gate electrode means thereof, said two-level turn on means comprising a structural arrangement including double diffusion deep and shallow drain and sink regions with substantial lateral diffusion expansion regions, said lateral diffusion exapnsion regions providing a reduced effective gate length, said reduced effective gate length being substantially shorter than the width of said gate electrode means thereof for simulating a depletion type MOS transistor independently of channel doping thereof, said second type of MOS transistor means including on-off means for causing said second type of MOS field effect transistor to be turned on in response to application of said first voltage level to the gate electrode means thereof and to be turned off in response to application of said second voltage level to the gate electrode means thereof, said on-off means comprising a structural arrangement including a graded drain structure with deep diffusion drain and sink regions and shallow diffusion regions at least adjacent said gate electrode means thereof thereby minimizing reduction of effective gate length and providing a substantially longer effective gate length than the effective gate length of said first type of transistor means.
Claim 3
Dependent Claim
31 words
A semiconductor read-only memory as recited in claim 1 wherein said relatively shallow diffusion regions are formed in said drain and sink regions of said second type of MOS transistor means.
Claim 4
Dependent Claim
54 words
A semiconductor read-only memory as recited in claim 1 wherein said substrate comprises a semiconductor doped by an impurity of one conductivity type and said diffused source and drain regions are doped by an impurity of an opposite conductivity type, said gate area including only impurity of said one conductivity type of said substrate.
Claim 5
Dependent Claim
160 words
A semiconductor read-only memory device in accordance with claim 1 wherein said second type of MOS field effect transistor means comprises a gate electrode mask means for forming said shallow diffusion regions thereof in a first diffusion, prior to an additional diffusion for forming said deep diffusion regions thereof by a second mask means wider than said gate electrode mask means, thereby preventing said substantially longer effective gate length from substantially reducing during said additional diffusion, wherein said first type of MOS field effect transistor means comprises a gate electrode mask means for forming both shallow and deep diffusion regions thereof in two diffusions, thereby causing substantial lateral diffusion for reducing the effective gate length of said first type of MOS field effect transistor means to be substantially shorter than the width of said electrode gate means thereof, and wherein said gate electrode mask means of each of said transistor means is comprised of the respective gate electrode means thereof.
Claim 6
Dependent Claim
80 words
A semiconductor read-only memory device in accordance with claim 4 wherein said electrode gate means of said first and second type MOS transistor means each have a substantially identical, common, width, and wherein said first type MOS transistor means includes an effective gate length substantially shorter than the common width of said electrode gate means thereof and said second type MOS transistor means includes an effective gate length substantially similar to the common width of said electrode gate means thereof.
Claim 7
Dependent Claim
80 words
A semiconductor read-only memory device in accordance with claim 1 wherein said electrode gate means of said first and second type MOS transistor means each have a substantially identical, common, width, and wherein said first type MOS transistor means includes an effective gate length substantially shorter than the common width of said electrode gate means thereof and said second type MOS transistor means includes an effective gate length substantially similar to the common width of said electrode gate means thereof.
Claim 8
Dependent Claim
275 words
A semiconductor read-only memory device having at least first and second different types of MOS field effect transistor means for storage of different values of data bits, said first and second types of MOS transistor means formed on a substrate and in electrical connection with each other, each transistor means having a gate electrode means on a major surface of said substrate defining a gate area therein, said gate electrode means of said two types of MOS transistors having substantially identical, common, widths, said first type of MOS transistor means having double diffusion deep and shallow drain and sink regions and substantial lateral diffusion expansion regions extending therefrom to a region below said gate electrode means thereof and providing to said first type of MOS transistor means a reduced effective gate length substantially shorter than the common width of said gate electrode means thereof for simulating a depletion type MOS transistor independently of channel doping thereof, said second type of MOS transistor means having a graded drain structure including deep diffusion drain and sink regions, formed by a deep diffusion using a mask wider than the width of said gate electrode means of said second type of MOS transistor, and shallow diffusion regions at least adjacent said gate electrode means thereof, said shallow diffusion regions formed by a shallow diffusion using a mask having substantially the same width as said gate electrode means of said second type of MOS transistor, thereby providing to said second type of MOS transistor means a substantially longer effective gate length than the effective gate length of said first type of transistor means for simulating an enhancement type MOS transistor.
Claim 9
Dependent Claim
275 words
A semiconductor read-only memory device having at least first and second different types of MOS field effect transistor means for storage of different values of data bits, said first and second types of MOS transistor means formed on a substrate and in electrical connection with each other, each transistor means having a gate electrode means on a major surface of said substrate defining a gate area therein, said gate electrode means of said two types of MOS transistors having substantially identical, common, widths, said first type of MOS transistor means having double diffusion deep and shallow drain and sink regions and substantial lateral diffusion expansion regions extending therefrom to a region below said gate electrode means thereof and providing to said first type of MOS transistor means a reduced effective gate length substantially shorter than the common width of said gate electrode means thereof for simulating a depletion type MOS transistor independently of channel doping thereof, said second type of MOS transistor means having a graded drain structure including deep diffusion drain and sink regions, formed by a deep diffusion using a mask wider than the width of said gate electrode means of said second type of MOS transistor, and shallow diffusion regions at least adjacent said gate electrode means thereof, said shallow diffusion regions formed by a shallow diffusion using a mask having substantially the same width as said gate electrode means of said second type of MOS transistor, thereby providing to said second type of MOS transistor means a substantially longer effective gate length than the effective gate length of said first type of transistor means for simulating an enhancement type MOS transistor.
Claim 10
Dependent Claim
115 words
A semiconductor read-only memory device in accordance with claim 2 wherein said shallow source and drain diffusion regions comprise diffusion regions developed through diffusion using a mask of substantially the same width as said gate electrode, and wherein said deep source and drain diffusion regions of said second transition means comprise first diffusion regions developed through diffusion using a mask of substantially the same width as said gate electrode concurrently to said diffusion intended for development of said shallow source and drain regions, and second diffusion regions developed through succeeding second diffusion using a mask of substantially the same width as said gate electrode, said second diffusion regions being contiguous to said first diffusion regions.
Claim 11
Dependent Claim
29 words
A semiconductor read-only memory device in accordance with claim 8 wherein each of said gate electrodes serves as said mask of substantially the same width as said gate electrodes.
Claim 12
Dependent Claim
63 words
A semiconductor read-only memory device in accordance with claim 1 wherein said deep diffusion regions of said second type of MOS field effect transistor means are formed in a separate diffusion by a mask of a width greater than the width of said gate electrode means thereof, whereby said substantially longer effective gate length is prevented from substantially reducing during said additional diffusion.
Claim 13
Dependent Claim
48 words
A semiconductor read-only memory device in accordance with claim 10 wherein said relatively deep diffusion regions of said second type of MOS field effect transistor means includes an additional diffusion region developed concurrently to a second diffusion region of said first type of MOS field effect transistor means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-26 | 1990-07-28 | 1991-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-26 | 1994-07-28 | 1995-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-26 | 1998-07-28 | 1999-01-27 | $7700.00 | Window Closed / Lapsed |