Compact ROM with reduced access time

Claim 2

A circuit suitable for use in a read only memory comprising a source of a first potential, a control node, an output node normally maintained at a relatively high potential, a plurality of driver transistors, each having a control terminal and an output circuit, said output circuits being operably connected in series between said source and said control node, means for selecting a driver transistor and for applying a select signal to the control terminal thereof and a non-select signal to each of the control terminals of the non-selected driver transistors, respectively, means for isolating said control node from said output node, said isolating means being effective, when actuated, to prevent said output node from discharging from said high potential, and means for charging said control node to a potential higher than the first potential, prior to the application of said select and non-select signals, said isolating means comprising an isolation transistor having an output circuit operatively connected between a reference potential and said output node and a control terminal operatively connected to said control node, said transistor being actuated if said control node is operatively connected to said source, through said series connected drivers, when said select and non-select signals are applied thereto.

Claim 3

The circuit of claim 1, wherein said charging means comprises a switched ground source.

Claim 4

The circuit of claim 2, wherein said switched ground source generates signals at said first potential and signals at said potential higher than said first potential, in timed sequence.

Claim 5

The circuit of claim 2, wherein said switched ground source comprises said source of said first potential.

Claim 6

The circuit of claim 2, further comprising means for operably connecting said switched ground source to said control node, said connecting means comprising means for preventing discharge of said control means through said switched ground source.

Claim 7

The circuit of claim 5, wherein said means for preventing discharge of said control node through said switched ground source comprises means for operatively isolating said control means from said switched ground source when said source generates signals at said first potential.

Claim 8

The circuit of claim 6, wherein said means for isolating said control node from said switched ground source comprises a diode.

Claim 9

The circuit of claim 1, further comprising a plurality of series connected driver transistor circuits connected in parallel with said plurality of driver transistors to form a group and means operatively interposed between said control node and said group for connecting a selected one of said driver transistor circuits to said control node.

Claim 10

The circuit of claim 8, wherein said connecting means comprises a transistor matrix operably connected between said control node and the respective driver transistor circuits in said group and effective to connect a selected one of said driver transistor circuits to said control node in accordance with column selection signals.

Claim 11

The circuit of claim 9, further comprising means for generating said column select signals and for applying same to said connecting means.

Claim 12

The circuit of Claim 8, further comprising a second group of parallel driver transistor circuits and a second means for connecting a selected one of said driver transistor circuits of said second group to said control node, each of said groups and said connecting means associated therewith forming a page, and means operatively interposed between said pages and said control node for connecting a selected one of said pages to said control node.

Claim 13

The circuit of claim 11, wherein said page connecting means comprises first and second page select transistors operably connected to connect one of said pages to said control node in accordance with page select signals.

Claim 14

The circuit of claim 12, further comprising means for generating said page select signals.

Claim 15

The circuit of claim 1, further comprising a plurality of series connected driver transistor circuits, connected in parallel with said plurality of driver transistors to form a group and wherein the control terminal of each driver transistor in each driver transistor circuit is operably connected to the control terminal of the corresponding driver transistor of each other driver transistor circuit in said group to form a row.

Claim 16

The circuit of claim 14, wherein each row of said operably connected control terminals is connected to a different output of said select signal applying means.

Claim 17

The circuit of claim 15, wherein the outputs of said select signal applying means are all high prior to the generation of said select and non-select signals.

Claim 18

The circuit of claim 16, wherein said select signals are low level and said non-select signals are high level.

Claim 19

The circuit of claim 1, wherein said select signals are low level and said non-select signals are high level.

Claim 20

The circuit of claim 12, wherein said page select signals are all low level prior to the application of said select and non-select signals.

Claim 21

The circuit of claim 9, wherein said column selection signals are all high level prior to application of said select and non-select signals.

Claim 22

The circuit of claim 1, further comprising means for normally maintaining said output node at said relatively high potential, said maintaining means comprises a source of relatively high potential and a load operably interposed between said source of high potential and said output node.

Claim 23

A read only memory comprising a switched ground source for generating a relatively high potential during a first time period and a relatively low potential during a second time period, a control node operatively connected to said source, such that said control node is charged to said high potential during said first period, an output node normally maintained at a relatively high potential, a plurality of parallel stacks, each of said stacks comprising a plurality of driver transistors each having a control terminal and an output circuit, the output circuits being connected in series, the control terminals of the corresponding driver transistors in each of said stacks being respectively aligned to form rows, stack selection means, one end of each of said stacks being connected to said source, the other end of each of said stacks being operatively connected through said stack selection means to said control node, means for selecting a row during said second period and for applying row select signals to said select row and row non-select signals to all non-selected rows, means for selecting a stack during said second time period and for applying stack select signals to said stack selection means to connect said one end of a selected stack to said control node, an isolating transistor having a control terminal connected to said control node and an output circuit connected between a reference potential and said output node, said isolating transistor being rendered conductive by the charge on said control node during said first period, and being rendered non-conductive to prevent the discharge of said output node if said selected stack is rendered conductive by said select and non-select signals, during said second time period and means for sensing the level of said output node during said second time period.

Claim 24

A read only memory comprising a switched ground source for generating a relatively high potential during a first time period and a relatively low potential during a second time period, a control node operatively connected to said source, such that said control node is charged to said high potential during said first period, an output node normally maintained at a relatively high potential, a plurality of parallel stacks, each of said stacks comprising a plurality of driver transistors each having a control terminal and an output circuit, the output circuits being connected in series, the control terminals of the corresponding driver transistors in each of said stacks being respectively aligned to form rows, stack selection means, one end of each of said stacks being connected to said source, the other end of each of said stacks being operatively connected through said stack selection means to said control node, means for selecting a row during said second period and for applying row select signals to said select row and row non-select signals to all non-selected rows, means for selecting a stack during said second time period and for applying stack select signals to said stack selection means to connect said one end of a selected stack to said control node, an isolating transistor having a control terminal connected to said control node and an output circuit connected between a reference potential and said output node, said isolating transistor being rendered conductive by the charge on said control node during said first period, and being rendered non-conductive to prevent the discharge of said output node if said selected stack is rendered conductive by said select and non-select signals, during said second time period and means for sensing the level of said output node during said second time period.

Claim 25

The memory of claim 22, further comprising a second plurality of parallel stacks and a second stack selection means, said second plurality of stacks having one end connected to said source and the other end connected to said control node through said second stack selection means.

Claim 26

The memory of claim 23, further comprising means interposed between said control node and said stack selection means for selecting one of said stack selection means and for operatively connecting same to said control node, in accordance with stack selection means selecting signals.

Claim 27

The memory of claim 22, further comprising means for connecting said source to said control node, said connecting means comprising a transistor functioning as a diode.

Claim 28

The memory of claim 24, wherein said stack select, row select and row non-select signals are all at a high level during said first time period.

Claim 29

The memory of claim 24, wherein all of said stack selection means selecting signals are low during said first time period.

Claim 30

The memory of claim 22, wherein said non-select signals are low level and said row non-select signals are high level during said second time period.

Claim 31

The memory of claim 23, wherein each of said plurality of parallel stacks and the associated stack selection means comprises a page and further comprising means interposed between said control node and said pages for selecting a page and connecting same to said control node.

Claim 32

The memory of claim 29, wherein said page selection means is responsive to page select signals and further comprising means for generating page select signals.

Claim 33

The memory of claim 30, wherein said page select signals are low level during said first time period.