Patent US4962744A successfully refreshed from Google Patents.
Patent US4630090A successfully refreshed from Google Patents.
US4630090A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mercury cadmium telluride infrared focal plane devices having step insulator and process for making same
Assignee: Texas Instruments Inc
•
Filing: 1984-09-25
•
Granted: 1986-12-16
•
Expires: 2004-09-25
Abstract
Abstract The disclosure relates to a stepped insulator process for HgCdTe infared focal plane devices, the insulator being a combination of two insulator materials, ZnS and SiO, which differ in dielectric constant and chemical reactivity. The structure is patterned on HgCdTe which has an accumulated surface region. The resulting configuration significantly reduces pin hole short circuits introduced during via etching and improves the operating range (channel stopping action) for a given step height over that of ZnS alone.
Inventors
- 👤 Arturo Simmons
- 👤 Michael A. Kinch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:45
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/86
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
108 words
A charge transfer device which comprises, in combination: (a) a semiconductor substrate of predetermined conductivity type; (b) an oxide layer on said substrate having a predetermined amount of fixed charge opposite to said predetermined conductivity type; (c) a first insulating layer of relatively high dielectric constant disposed over a surface of said oxide layer; (d) a second insulating layer of relatively low dielectric constant selectively disposed over portions of said first insulating layer to expose regions of said first insulating layer therethrough; and (e) a first electrically conductive layer disposed over said second insulating layer and following the contour onto the exposed regions of said first insulating layer.
Claim 2
Dependent Claim
108 words
A charge transfer device which comprises, in combination: (a) a semiconductor substrate of predetermined conductivity type; (b) an oxide layer on said substrate having a predetermined amount of fixed charge opposite to said predetermined conductivity type; (c) a first insulating layer of relatively high dielectric constant disposed over a surface of said oxide layer; (d) a second insulating layer of relatively low dielectric constant selectively disposed over portions of said first insulating layer to expose regions of said first insulating layer therethrough; and (e) a first electrically conductive layer disposed over said second insulating layer and following the contour onto the exposed regions of said first insulating layer.
Claim 3
Dependent Claim
34 words
A charge transfer device as set forth in claim 1 wherein said first and second insulating layers are each of substantially uniform thickness, whereby a step is formed at each of said exposed regions.
Claim 4
Dependent Claim
58 words
A charge transfer device as set forth in claim 1 further including a third insulating layer disposed over said first conductive layer, a via in said third insulating layer extending to said first conductive layer and a second electrically conductive layer disposed on said third insulating layer and extending into said via to contact said first conductive layer.
Claim 5
Dependent Claim
58 words
A charge transfer device as set forth in claim 2 further including a third insulating layer disposed over said first conductive layer, a via in said third insulating layer extending to said first conductive layer and a second electrically conductive layer disposed on said third insulating layer and extending into said via to contact said first conductive layer.
Claim 6
Dependent Claim
26 words
A charge transfer device as set forth in claim 1 wherein said first insulating layer is zinc sulfide and said second insulating layer is silicon oxide.
Claim 7
Dependent Claim
26 words
A charge transfer device as set forth in claim 2 wherein said first insulating layer is zinc sulfide and said second insulating layer is silicon oxide.
Claim 8
Dependent Claim
26 words
A charge transfer device as set forth in claim 3 wherein said first insulating layer is zinc sulfide and said second insulating layer is silicon oxide.
Claim 9
Dependent Claim
26 words
A charge transfer device as set forth in claim 4 wherein said first insulating layer is zinc sulfide and said second insulating layer is silicon oxide.
Claim 10
Dependent Claim
15 words
A charge transfer device as set forth in claim 5 wherein said substrate is HgCdTe.
Claim 11
Dependent Claim
15 words
A charge transfer device as set forth in claim 6 wherein said substrate is HgCdTe.
Claim 12
Dependent Claim
15 words
A charge transfer device as set forth in claim 7 wherein said substrate is HgCdTe.
Claim 13
Dependent Claim
15 words
A charge transfer device as set forth in claim 8 wherein said substrate is HgCdTe.
References Cited (Backward Citations)
US3663277A
Cited
US3728784A
Cited
US3865652A
Cited
US4197552A
Cited
US4286278A
Cited
US4273596A
Cited
US4231149A
Cited
US4360732A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-15 | 1990-06-16 | 1990-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-15 | 1994-06-16 | 1994-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-15 | 1998-06-16 | 1998-12-16 | $7700.00 | Window Closed / Lapsed |