Luminescent semiconductor devices

Claim 2

An MIS luminescent semiconductor crystalline device, that comprises: a wide-gap semiconductor material forming a substrate; a thin insulating layer on the substrate, said thin insulating layer comprising a narrow energy gap alkali halide such that hole tunneling can occur therethrough into the valence band of the semiconductor and having a low electron affinity in order to inhibit the transfer of electrons from the semiconductor conduction band, said thin insulating layer being no more than approximately 100 A thick; said alkali halide insulating layer having a band gap less than about 7.4 eV; and a metal layer on the insulating layer such that the insulating layer is sandwiched between the substrate and the metal layer.

Claim 3

A luminescent semiconductor device as claimed in claim 1 in which the alkali halide is taken from the group consisting essentially of sodium iodide (NaI), potassium iodide (KI) and lithium iodide (LiI) which have the respective band gaps E gi of 5.8, 6.2 and 5.9 electron volts.

Claim 4

An MIS luminescent semiconductor crystalline device, that comprises: a wide-gap semiconductor material forming a substrate; a thin insulating layer on the substrate, said thin insulating layer comprising a narrow energy gap alkali halide such that hole tunneling can occur therethrough into the valence band of the semiconductor and having a low electron affinity in order to inhibit the transfer of electrons from the semiconductor conduction band, the band gap of the alkali halide insulating layer being less than 7.4 eV and the electron affinity being about 0.4 eV; and a metal layer on the insulating layer such that the insulating layer is sandwiched between the substrate and the metal layer.

Claim 5

An MIS luminescent semiconductor crystalline device, that comprises: a wide-gap semiconductor material forming a substrate; a thin insulating layer on the substrate, said thin insulating layer comprising a narrow energy gap alkali halide such that hole tunneling can occur therethrough into the valence band of the semiconductor and having a low electron affinity in order to inhibit the transfer of electrons from the semiconductor conduction band, the band gap of the alkali halide insulating layer being less than 7.4 eV and the electron affinity being about 0.4 eV; and a metal layer on the insulating layer such that the insulating layer is sandwiched between the substrate and the metal layer.

Claim 6

A semiconductor crystalline device that comprises wide-gap semiconductor substrate means; thin insulating layer means formed on the substrate means, said thin insulating layer means comprising an alkali halide having a small band gap and low electron affinity, the band gap of the alkali halide being less than 7.4 eV and the electron affinity of the alkali halide being no greater than about 0.4 eV; and metal layer means formed on the insulating layer means such that the insulating layer means is sandwhched between the substrate means and the metal layer means; said crystalline device being adapted to receive a forward bias and when so biased being operable to luminesce by injection of holes from empty states in the metal of the metal layer means into the valence band of the semiconductor of the semiconductor substrate means by tunneling through the thin insulating layer means.

Claim 7

A semiconductor crystalline device that comprises wide-gap semiconductor substrate means; thin insulating layer means formed on the substrate means, said thin insulating layer means comprising an alkali halide having a small band gap and low electron affinity, the band gap of the alkali halide being less than 7.4 eV and the electron affinity of the alkali halide being no greater than about 0.4 eV; and metal layer means formed on the insulating layer means such that the insulating layer means is sandwhched between the substrate means and the metal layer means; said crystalline device being adapted to receive a forward bias and when so biased being operable to luminesce by injection of holes from empty states in the metal of the metal layer means into the valence band of the semiconductor of the semiconductor substrate means by tunneling through the thin insulating layer means.

Claim 8

A device as claimed in claim 4 in which the band gap of the material of which the semiconductor substrate consists is about 3.6 eV.

Claim 9

For use as a luminescent device to emit visible light, metal-insulating-semiconductor (MIS) structure crystalline means to receive a bias and adapted to luminesce when so biased and having, in combination, wide-gap semiconductor substrate means, the material of which the semiconductor substrate means consists being at least about 3.6 eV; thin insulating means formed on the substrate means, said thin insulating means comprising an alkali halide layer <100 A and having a small band gap and low electron affinity to permit selective passage of the hole component of current through the insulating layer means, the band gap of the alkali halide being less than 7.4, and the electron affinity of the alkali halide being no greater than about 0.4 eV; and metal layer means formed on the insulating layer means such that the insulating layer means is sandwiched between the substrate means and the metal layer means, the metal of which the metal layer means consists having a high work function, light-producing current occurring between the substrate means and the metal layer means through said thin insulating layer means when the device is biased, the light producing current being the hole component.

Claim 10

For use as a luminescent device to emit visible light, metal-insulating-semiconductor (MIS) structure crystalline means to receive a bias and adapted to luminesce when so biased and having, in combination, wide-gap semiconductor substrate means, the material of which the semiconductor substrate means consists being at least about 3.6 eV; thin insulating means formed on the substrate means, said thin insulating means comprising an alkali halide layer <100 A and having a small band gap and low electron affinity to permit selective passage of the hole component of current through the insulating layer means, the band gap of the alkali halide being less than 7.4, and the electron affinity of the alkali halide being no greater than about 0.4 eV; and metal layer means formed on the insulating layer means such that the insulating layer means is sandwiched between the substrate means and the metal layer means, the metal of which the metal layer means consists having a high work function, light-producing current occurring between the substrate means and the metal layer means through said thin insulating layer means when the device is biased, the light producing current being the hole component.