Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
234 words
A lithographic deep UV light sensitive positive photoresist composition for use with deep UV light of less than 300 nm comprising a base soluble film-forming positive photoresist polymer and in admixture therewith an effective amount of a deep UV photosensitive solubilizing agent compound of the formula: ##STR4## wherein: R 4 is --C(O)R 5 in which R 5 is an alkoxy group having from 1 to about 20 carbon atoms; R 6 , R 7 , R 8 and R 9 may each be the same or different and are selected from the group consisting of hydrogen and alkyl of from 1 to about 6 carbon atoms or (a) one of either R 6 or R 7 and one of either R 8 and R 9 is hydrogen and the other of either R 6 or R 7 and the other of either R 8 or R 9 which is not hydrogen together form an alkylene group of from 1 to about 6 carbon atoms, or (b) one set of either R 6 and R 7 together or R 8 and R 9 together is a cycloalkyl group of from 4 to 8 carbon atoms and the other set of either R 6 and R 7 or R 8 and R 9 that is not cycloalkyl are each hydrogen, whereby upon exposure to deep UV radiation the exposed composition becomes more soluble in alkaline developer.
Claim 2
Dependent Claim
234 words
A lithographic deep UV light sensitive positive photoresist composition for use with deep UV light of less than 300 nm comprising a base soluble film-forming positive photoresist polymer and in admixture therewith an effective amount of a deep UV photosensitive solubilizing agent compound of the formula: ##STR4## wherein: R 4 is --C(O)R 5 in which R 5 is an alkoxy group having from 1 to about 20 carbon atoms; R 6 , R 7 , R 8 and R 9 may each be the same or different and are selected from the group consisting of hydrogen and alkyl of from 1 to about 6 carbon atoms or (a) one of either R 6 or R 7 and one of either R 8 and R 9 is hydrogen and the other of either R 6 or R 7 and the other of either R 8 or R 9 which is not hydrogen together form an alkylene group of from 1 to about 6 carbon atoms, or (b) one set of either R 6 and R 7 together or R 8 and R 9 together is a cycloalkyl group of from 4 to 8 carbon atoms and the other set of either R 6 and R 7 or R 8 and R 9 that is not cycloalkyl are each hydrogen, whereby upon exposure to deep UV radiation the exposed composition becomes more soluble in alkaline developer.
Claim 3
Dependent Claim
28 words
A composition of claim 1 wherein the base soluble film-forming polymer is a resin selected from the group consisting of phenol-formaldehyde, cresol-formaldehyde, poly(vinylphenol) and poly(methyl methacrylate-methacrylic acid) resins.
Claim 4
Dependent Claim
32 words
A composition of claim 1 wherein the solubilizing agent is present in an amount of from about 15 to about 50% by weight based on the combined weight of polymer and agent.
Claim 5
Dependent Claim
32 words
A composition of claim 2 wherein the solubilizing agent is present in an amount of from about 15 to about 50% by weight based on the combined weight of polymer and agent.
Claim 6
Dependent Claim
36 words
A composition of claim 1 wherein the solubilizing agent is a compound of the formula ##STR5## wherein n is a number of from 1 to 6 and R 4 is as defined in said claim 1.
Claim 7
Dependent Claim
36 words
A composition of claim 1 wherein the solubilizing agent is a compound of the formula ##STR6## wherein m is a number of from 4 to 8 and R 4 is as defined in said claim 1.
Claim 8
Dependent Claim
36 words
A composition of claim 1 wherein the solubilizing agent is a compound of the formula ##STR7## wherein m is a number of from 4 to 8 and R 4 is as defined in said claim 1.
Claim 9
Dependent Claim
12 words
A composition of claim 5 wherein the solubilizing agent is ethyl 3-diazo-2,4-dioxodecalincarboxylate.
Claim 10
Dependent Claim
13 words
A composition of claim 1 wherein the solubilizing agent is ethyl 5-diazo-2,2-dimethyl-4,6-dioxocyclohexane carboxylate.
Claim 11
Dependent Claim
12 words
A composition of claim 4 wherein the solubilizing agent is ethyl 3-diazo-2,4-dioxodecalincarboxylate.
Claim 12
Dependent Claim
13 words
A composition of claim 4 wherein the solubilizing agent is ethyl 5-diazo-2,2-dimethyl-4,6-dioxocyclohexane carboxylate.
Claim 13
Dependent Claim
13 words
A composition of claim 8 wherein the polymer is a poly(methyl methacrylate-methacrylic acid).
Claim 14
Dependent Claim
54 words
A composition of claim 12 wherein the solubilizing agent is present in an amount of from about 15 to about 50% by weight based on the combined weight of polymer and agent and the poly(methyl methacrylate-methacrylic acid) has a molecular weight of about 80,000 and the ratio of methacrylate to methacrylic acid is 75/25.
Claim 15
Dependent Claim
19 words
A composition of claim 13 wherein the solubilizing agent is present in an amount of about 30% by weight.
Claim 16
Dependent Claim
27 words
A castable resist composition comprising the lithographic resist composition of claim 1 in a film-forming solvent having a boiling point of from about 120° to 210° C.
Claim 17
Dependent Claim
23 words
A castable resist composition of claim 15 wherein the solvent comprises from about 50 to about 95% by weight of the castable composition.
Claim 18
Dependent Claim
26 words
A castable resist composition of claim 16 wherein the solvent is selected from the group consisting of diglyme, methyl isobutyl ketone, 2-ethoxyethanol, 2-methoxyethyl acetate and γ-butyrolactone.
Claim 19
Dependent Claim
14 words
A castable resis composition of claim 17 wherein the solubilizing agent is ethyl 3-diazo-2,4-dioxodecalincarboxylate.
Claim 20
Dependent Claim
61 words
A castable resist composition comprising the lithographic resist composition of claim 1 in a film-forming solvent having a boiling point of from about 120° to 210° C. and wherein the solvent comprises from about 50% to about 95% by weight of the castable composition and is selected from the group consisting of diglyme, methyl isobutyl ketone, 2-ethoxyethanol, 2-methoxyethyl acetate and γ-butyrolactone.
Claim 21
Dependent Claim
61 words
A castable resist composition comprising the lithographic resist composition of claim 5 in a film-forming solvent having a boiling point of from about 120° to 210° C. and wherein the solvent comprises from about 50% to about 95% by weight of the castable composition and is selected from the group consisting of diglyme, methyl isobutyl ketone, 2-ethoxyethanol, 2-methoxyethyl acetate and γ-butyrolactone.
Claim 22
Dependent Claim
61 words
A castable resist composition comprising the lithographic resist composition of claim 6 in a film-forming solvent having a boiling point of from about 120° to 210° C. and wherein the solvent comprises from about 50% to about 95% by weight of the castable composition and is selected from the group consisting of diglyme, methyl isobutyl ketone, 2-ethoxyethanol, 2-methoxyethyl acetate and γ-butyrolactone.
Claim 23
Dependent Claim
61 words
A castable resist composition comprising the lithographic resist composition of claim 7 in a film-forming solvent having a boiling point of from about 120° to 210° C. and wherein the solvent comprises from about 50% to about 95% by weight of the castable composition and is selected from the group consisting of diglyme, methyl isobutyl ketone, 2-ethoxyethanol, 2-methoxyethyl acetate and γ-butyrolactone.
Claim 24
Dependent Claim
57 words
A process for forming a lithographic resist image comprising image-wise exposing to deep UV light of less than about 300 nm a film cast on a substrate and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from the castable composition of claim 15.
Claim 25
Dependent Claim
57 words
A process for forming a lithographic resist image comprising image-wise exposing to deep UV light of less then about 300 nm a film cast on a substrate and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from the castable composition of claim 16.
Claim 26
Dependent Claim
57 words
A process for forming a lithographic resist image comprising image-wise exposing to deep UV light of less than about 300 nm a film cast on a substrate and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from the castable composition of claim 17.
Claim 27
Dependent Claim
57 words
A process for forming a lithographic resist image comprising image-wise exposing to deep UV light of less than about 300 nm a film cast on a substrate and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from the castable composition of claim 18.
Claim 28
Dependent Claim
57 words
A process for forming a lithographic resist image comprising image-wise exposing to deep UV light of less than about 300 nm a film cast on a substrate and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from the castable composition of claim 19.
Claim 29
Dependent Claim
57 words
A process for forming a lithographic resist image comprising image-wise exposing to deep UV light of less than about 300 nm a film cast on a substrate and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from the castable composition of claim 20.
Claim 30
Dependent Claim
57 words
A process for forming a lithographic resist image comprising image-wise exposing to deep UV light of less than about 300 nm a film cast on a substrate and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from the castable composition of claim 21.
Claim 31
Dependent Claim
57 words
A process for forming a lithographic resist image comprising image-wise exposing to deep UV light of less than about 300 nm a film cast on a substrate and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from the castable composition of claim 22.