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US4284706A Expired / Lapsed US ⏱️ 0.0 years remaining

Lithographic resist composition for a lift-off process

Assignee: International Business Machines Corp
•
Filing: 1979-12-03
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Granted: 1981-08-18
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Expires: 1999-12-03
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Abstract

Abstract Lithographic resist compositions are provided which permit an improved lift-off process in which the deposition mask with apertures has the desirable negative slope or overhang. The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: ##STR1## wherein R 1 is C 1 to C 20 alkyl or aryl, R 2 is H, C 1 to C 20 alkyl or aryl, or together R 1 and R 2 are cycloalkyl, A is N or H.

Inventors

  • 👤 Nicholas J. Clecak
  • 👤 Barbara D. Grant
  • 👤 Carlton G. Willson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 10:53
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/016; G03F7/0163; G03F7/022; G03F7/0226

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 87 words
A lithographic resist composition for use in a lift-off process with ultra-violet light to form a mask with apertures having a negative slope comprising a phenolic-aldehyde resin, a naphthoquinone diazide sulfonic acid ester sensitizer and in admixture therewith a profile modifying agent having the formula ##STR6## wherein R 1 is alkyl or aryl having up to 20 carbon atoms, R 2 is H, alkyl or aryl having up to 20 carbon atoms, or together R 1 and R 2 are cycloalkyl and A is N or H.
Claim 2
Dependent Claim 87 words
A lithographic resist composition for use in a lift-off process with ultra-violet light to form a mask with apertures having a negative slope comprising a phenolic-aldehyde resin, a naphthoquinone diazide sulfonic acid ester sensitizer and in admixture therewith a profile modifying agent having the formula ##STR6## wherein R 1 is alkyl or aryl having up to 20 carbon atoms, R 2 is H, alkyl or aryl having up to 20 carbon atoms, or together R 1 and R 2 are cycloalkyl and A is N or H.
Claim 3
Dependent Claim 24 words
A composition as claimed in claim 1 wherein the release material is present in an amount of from about 5% to the saturation level.
Claim 4
Dependent Claim 14 words
A composition as claimed in claim 1 wherein the resin is a cresol-formaldehyde resin.
Claim 5
Dependent Claim 15 words
A composition as claimed in claim 1 wherein the profile modifying agent is Meldrum's diazo.
Claim 6
Dependent Claim 46 words
A lithographic resist composition for use in a lift-off process with ultra-violet light to form a mask with apertures having a negative slope comprising a phenolic-aldehyde resin, a naphthoquinone diazide sulfonic acid ester sensitizer and in admixture therewith a profile modifying agent that is Meldrum's acid.
Claim 7
Dependent Claim 46 words
A lithographic resist composition for use in a lift-off process with ultra-violet light to form a mask with apertures having a negative slope comprising a phenolic-aldehyde resin, a naphthoquinone diazide sulfonic acid ester sensitizer and in admixture therewith a profile modifying agent that is Meldrum's acid.
Claim 8
Dependent Claim 128 words
A lift-off process for forming a lithographic resist image comprising baking a film comprising a phenolic-aldehyde resin, a naphthoquinone diazide sulfonic acid ester sensitizer and in admixture therewith a profile modifying agent having the formula ##STR7## wherein R 1 is alkyl or aryl having up to 20 carbon atoms, R 2 is H, alkyl or aryl having up to 20 carbon atoms, or together R 1 and R 2 are cycloalkyl, and A is N or H at a temperature for a time sufficient for said profile modifying agent to form a skin at the surface of said film, image-wise exposing said baked film to ultraviolet light, and dissolving the exposed portions of said film with aqueous alkali to form a mask with apertures having a negative slope.
Claim 9
Dependent Claim 128 words
A lift-off process for forming a lithographic resist image comprising baking a film comprising a phenolic-aldehyde resin, a naphthoquinone diazide sulfonic acid ester sensitizer and in admixture therewith a profile modifying agent having the formula ##STR7## wherein R 1 is alkyl or aryl having up to 20 carbon atoms, R 2 is H, alkyl or aryl having up to 20 carbon atoms, or together R 1 and R 2 are cycloalkyl, and A is N or H at a temperature for a time sufficient for said profile modifying agent to form a skin at the surface of said film, image-wise exposing said baked film to ultraviolet light, and dissolving the exposed portions of said film with aqueous alkali to form a mask with apertures having a negative slope.
Claim 10
Dependent Claim 15 words
A process as claimed in claim 6 wherein the profile modifying agent is Meldrum's diazo.
Claim 11
Dependent Claim 25 words
A process as claimed in claim 6 wherein the profile modifying agent is present in an amount of from about 5% to the saturation level.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1984-08-17 1985-02-16 1985-08-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1988-08-17 1989-02-16 1989-08-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1992-08-17 1993-02-16 1993-08-18 $7700.00 Window Closed / Lapsed

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