US4623910A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Individual
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Filing: 1982-09-24
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Granted: 1986-11-18
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Expires: 2002-09-24
Abstract
Abstract A semiconductor device is manufactured similar to a gate turn off (GTO) thyristor but employs PNP bipolar transistors in place of the usual anode P islands. In one modification, the PNP bipolar transistors of the basic device are replaced with P channel, enhancement mode MOSFETs.
Inventors
- 👤 Robert L. Risberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:31
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/142; H10D18/00; H10D18/60; H10D62/148; H10W; H10W90/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
219 words
A semiconductor device comprising: a body of semiconductor material of a first conductivity type; a layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one island region of said first conductivity type in said layer of semiconductor material; a cathode electrode in electrical contact with said island region in said layer of semiconductor material; a first gate electrode in electrical contact with said layer of semiconductor material adjacent said island region; at least a first island region of said second conductivity type in said body of semiconductor material on a face opposite said one face; a second island region of said first conductivity type within said first island region of said second conductivity type; a third island region of said second conductivity type within said second island region of said first conductivity type, said first, second and third island regions forming a bipolar transistor; an anode electrode in electrical contact with said body of semiconductor material adjacent said first island region; an emitter electrode electrically common with said anode electrode and in electrical contact with said third island region of said second conductivity type; and a second gate electrode in electrical contact with said second island region of said first conductivity type.
Claim 2
Dependent Claim
219 words
A semiconductor device comprising: a body of semiconductor material of a first conductivity type; a layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one island region of said first conductivity type in said layer of semiconductor material; a cathode electrode in electrical contact with said island region in said layer of semiconductor material; a first gate electrode in electrical contact with said layer of semiconductor material adjacent said island region; at least a first island region of said second conductivity type in said body of semiconductor material on a face opposite said one face; a second island region of said first conductivity type within said first island region of said second conductivity type; a third island region of said second conductivity type within said second island region of said first conductivity type, said first, second and third island regions forming a bipolar transistor; an anode electrode in electrical contact with said body of semiconductor material adjacent said first island region; an emitter electrode electrically common with said anode electrode and in electrical contact with said third island region of said second conductivity type; and a second gate electrode in electrical contact with said second island region of said first conductivity type.
Claim 3
Dependent Claim
219 words
A semiconductor device comprising: a body of semiconductor material of a first conductivity type; a layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one island region of said first conductivity type in said layer of semiconductor material; a cathode electrode in electrical contact with said island region in said layer of semiconductor material; a first gate electrode in electrical contact with said layer of semiconductor material adjacent said island region; at least a first island region of said second conductivity type in said body of semiconductor material on a face opposite said one face; a second island region of said first conductivity type within said first island region of said second conductivity type; a third island region of said second conductivity type within said second island region of said first conductivity type, said first, second and third island regions forming a MOSFET; an anode electrode in electrical contact with said body of semiconductor material adjacent said first island region; a source electrode electrically common with said anode electrode and in electrical contact with said third island region of said second conductivity type; and a second gate electrode separated from said second island region of said first conductivity type by a dielectric.
Claim 4
Dependent Claim
219 words
A semiconductor device comprising: a body of semiconductor material of a first conductivity type; a layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one island region of said first conductivity type in said layer of semiconductor material; a cathode electrode in electrical contact with said island region in said layer of semiconductor material; a first gate electrode in electrical contact with said layer of semiconductor material adjacent said island region; at least a first island region of said second conductivity type in said body of semiconductor material on a face opposite said one face; a second island region of said first conductivity type within said first island region of said second conductivity type; a third island region of said second conductivity type within said second island region of said first conductivity type, said first, second and third island regions forming a MOSFET; an anode electrode in electrical contact with said body of semiconductor material adjacent said first island region; a source electrode electrically common with said anode electrode and in electrical contact with said third island region of said second conductivity type; and a second gate electrode separated from said second island region of said first conductivity type by a dielectric.
Claim 5
Dependent Claim
213 words
A semiconductor device comprising: a body of semiconductor material of a first conductivity type; a layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one island region of said first conductivity type in said layer of semiconductor material; a cathode electrode in electrical contact with said island region in said layer of semiconductor material; a first gate electrode in electrical contact with said layer of semiconductor material adjacent said island region; at least a first diffusion region of said second conductivity type in said body of semiconductor material on a face opposite said one face; a second diffusion region of said first conductivity type over said first diffusion region of said second conductivity type; a third diffusion region of said second conductivity type over said second diffusion region of said first conductivity type, said second and third diffusion regions being divided in half by a V groove extending into said first diffusion region; an anode electrode in electrical contact with said body of semiconductor material and said third diffusion region; a dielectric formed within said V groove; and a second gate electrode separated from said second diffusion region of said first conductivity type by said dielectric.
Claim 6
Dependent Claim
213 words
A semiconductor device comprising: a body of semiconductor material of a first conductivity type; a layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one island region of said first conductivity type in said layer of semiconductor material; a cathode electrode in electrical contact with said island region in said layer of semiconductor material; a first gate electrode in electrical contact with said layer of semiconductor material adjacent said island region; at least a first diffusion region of said second conductivity type in said body of semiconductor material on a face opposite said one face; a second diffusion region of said first conductivity type over said first diffusion region of said second conductivity type; a third diffusion region of said second conductivity type over said second diffusion region of said first conductivity type, said second and third diffusion regions being divided in half by a V groove extending into said first diffusion region; an anode electrode in electrical contact with said body of semiconductor material and said third diffusion region; a dielectric formed within said V groove; and a second gate electrode separated from said second diffusion region of said first conductivity type by said dielectric.
Claim 7
Dependent Claim
37 words
A semiconductor device as recited in claims 1, 2 or 3 wherein said semiconductor of a first conductivity type is an N type semiconductor and said semiconductor of a second conductivity type is a P type semiconductor.
Claim 8
Dependent Claim
38 words
A semiconductor device as recited in claims 1, 2 or 3 wherein said first, second and third regions are formed in an epitaxial layer grown on the face opposite said one face of said body of semiconductor material.
Claim 9
Dependent Claim
268 words
A semiconductor device comprising: a first body of semiconductor material of a first conductivity type; a layer of semiconductor material of a second conductivity type on one face of said first body of semiconductor material and forming a PN junction therewith; at least one island region of said first conductivity type in said layer of semiconductor material; a cathode electrode in electrical contact with said island region in said layer of semiconductor material; a first gate electrode in electrical contact with said layer of semiconductor material adjacent said island region; at least a first island region of said second conductivity type in said first body of semiconductor material on a face opposite said one face; a second body of semiconductor material of said first conductivity type; at least a second island region of said second conductivity type on one face of said second body of semiconductor material; a third island region of said first conductivity type within said second island region of said second conductivity type; an electrode on said face opposite said one face of said second body of semiconductor material and in electrical contact with said first island region of second conductivity type in said first body of semiconductor material; an oxide layer formed on said second island region in said second body of semiconductor material; a second gate electrode formed over said oxide layer; and an anode electrode in electrical contact with said first body of semiconductor material adjacent said first island region of said second conductivity type and also in electrical contact with said third island region in said second body of semiconductor material.
Claim 10
Dependent Claim
268 words
A semiconductor device comprising: a first body of semiconductor material of a first conductivity type; a layer of semiconductor material of a second conductivity type on one face of said first body of semiconductor material and forming a PN junction therewith; at least one island region of said first conductivity type in said layer of semiconductor material; a cathode electrode in electrical contact with said island region in said layer of semiconductor material; a first gate electrode in electrical contact with said layer of semiconductor material adjacent said island region; at least a first island region of said second conductivity type in said first body of semiconductor material on a face opposite said one face; a second body of semiconductor material of said first conductivity type; at least a second island region of said second conductivity type on one face of said second body of semiconductor material; a third island region of said first conductivity type within said second island region of said second conductivity type; an electrode on said face opposite said one face of said second body of semiconductor material and in electrical contact with said first island region of second conductivity type in said first body of semiconductor material; an oxide layer formed on said second island region in said second body of semiconductor material; a second gate electrode formed over said oxide layer; and an anode electrode in electrical contact with said first body of semiconductor material adjacent said first island region of said second conductivity type and also in electrical contact with said third island region in said second body of semiconductor material.
Claim 11
Dependent Claim
45 words
A semiconductor device as recited in claims 1, 2, 3 or 6 wherein an isolating groove is formed in said layer of semiconductor material of said second conductivity type adjacent a peripheral edge thereof to define a fast recovery diode formed by said PN junction.
References Cited (Backward Citations)
US3261985A
Cited
US3391310A
Cited
US3401320A
Cited
US3693054A
Cited
US4032958A
Cited
US3979766A
Cited
US3996601A
Cited
US4190853A
Cited
US3972014A
Cited
US4053921A
Cited
US4011579A
Cited
US4163241A
Cited
US4054893A
Cited
US4286279A
Cited
US4214255A
Cited
DE2705990A1
Cited
DE2835076A1
Cited
US4398205A
Cited
US4291325A
Cited
US4278476A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-17 | 1990-05-19 | 1990-11-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-17 | 1994-05-19 | 1994-11-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-17 | 1998-05-19 | 1998-11-18 | $7700.00 | Window Closed / Lapsed |