Cross-current turn-off silicon controlled rectifier

Claim 1

A SEMICONDUCTOR TRANSLATING DEVICE COMPRISING: (A) A CIRCULAR SEMICONDUCTOR SINGLE CRYSTAL SILICON WAFER HAVING A MAIN P TYPE CONDUCTIVITY ZONE AND A CONTIGUOUS MAIN N TYPE CONDUCTIVITY ZONE IN FLAT FACE TO FLAT FACE CONTACT, (B) THE EXTERIOR FLAT FACE OF EACH OF SAID MAIN ZONES BEING PROVIDED WITH RADIALLY CENTRALLY DISPOSED ZONE OF ONE TYPE CONDUCTIVITY AND A SURROUNDING CONCENTRIC ANNULAR ZONE OF THE OPPOSITE TYPE CONDUCTIVITY TO CONSTITUTE (1) A PNPN SEMICONDUCTOR DEVICE WITH THE TERMINAL P AND N ZONES CONSTITUTING AN ANODE AND A CATHODE RESPECTIVELY AND (2) A PPNN SEMICONDUCTOR DEVICE HAVING A TERMINAL ELECTRODES AND A PN JUNCTION IN COMMON WITH THE MIDDLE JUNCTION OF SAID PNPN SEMICONDUCTOR DEVICE, (C) ONE OF SAID MAIN ZONES OF SAID PNPN DEVICE BEING PROVIDED WITH MEANS FOR RECEIVING A PULSE OF FIRING CURRENT TO INITIATE CONDUCTION THROUGH SAID PNPN DEVICE, AND (D) MEANS FOR SUPPLYING A VOLTAGE TO SAID TERMINAL ELECTRODES OF SAID PPNN DEVICE TO CAUSE A REVERSE CURRENT THROUGH SAID PPNN DEVICE WHEN SAID PNPN DEVICE IS CONDUCTING TO REMOVE INJECTED CARRIERS FROM SAID COMMON JUNCTION TO TERMINATE CONDUCTION THROUGH SAID PNPN DEVICE.