US4286279A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multilayer semiconductor switching devices
Assignee: Individual
•
Filing: 1979-11-15
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Granted: 1981-08-25
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Expires: 1999-11-15
Abstract
Abstract The specification discloses semiconductor switching devices having more than five layers of alternating semiconductor conductivity types and which do not utilize substantial lateral switching currents during the operation thereof. Ones of the exterior layers of the devices are heavily doped. In one embodiment of the invention, an asymmetrical regenerative semiconductor switch is disclosed which operates in the general manner of a silicon controlled rectifier but which includes two blocking junctions therein. In another embodiment of the invention, a semiconductor switching device having symmetrical switching operation is disclosed.
Inventors
- 👤 Jearld L. Hutson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 10:10
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/241; H10D18/80; H10D8/00; H10D8/80
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
222 words
A semiconductor switch and associated circuitry formed in a unitary semiconductor body comprising: a semiconductor body having five layers of alternating first and second semiconductor conductivity types, the outer layers and one of the intermediate layers being constructed from said first conductivity type, a channel formed across one of said outer layers and extending through at least one of said layers to geometrically and electrically isolate first and second areas of said body, said one intermediate layer remaining integral and being common to and electrically available to both said first and second areas of said body, regions of said second conductivity type being formed over said outer layers in said first area, first electrodes contacting at least one of said outer layers and said regions of said second conductivity type to form a semiconductor switch in said first area, at least one region of said second conductivity type formed in one of said outer layers in said second area, and second electrodes contacting one of said outer layers and said region in said second area to form at least one electronic device which is geometrically and electrically isolated from said semiconductor switch in at least one mode, said electronic device operable in a second mode to provide switching signals through said one intermediate layer to cause switching operation of said semiconductor switch.
Claim 2
Dependent Claim
222 words
A semiconductor switch and associated circuitry formed in a unitary semiconductor body comprising: a semiconductor body having five layers of alternating first and second semiconductor conductivity types, the outer layers and one of the intermediate layers being constructed from said first conductivity type, a channel formed across one of said outer layers and extending through at least one of said layers to geometrically and electrically isolate first and second areas of said body, said one intermediate layer remaining integral and being common to and electrically available to both said first and second areas of said body, regions of said second conductivity type being formed over said outer layers in said first area, first electrodes contacting at least one of said outer layers and said regions of said second conductivity type to form a semiconductor switch in said first area, at least one region of said second conductivity type formed in one of said outer layers in said second area, and second electrodes contacting one of said outer layers and said region in said second area to form at least one electronic device which is geometrically and electrically isolated from said semiconductor switch in at least one mode, said electronic device operable in a second mode to provide switching signals through said one intermediate layer to cause switching operation of said semiconductor switch.
Claim 3
Dependent Claim
16 words
The switch and associated circuitry of claim 1 wherein said semiconductor switch has symmetrical switching operation.
Claim 4
Dependent Claim
17 words
The switch and associated circuitry of claim 1 wherein said semiconductor switch has asymmetrical regenerative switching operation.
Claim 5
Dependent Claim
44 words
The switch and associated circuitry of claim 1 and further comprising: a region of said first conductivity type formed in said region of said second conductivity type in said second area, and electrodes contacting said regions and said outer layer to form a transistor.
Claim 6
Dependent Claim
22 words
The switch and associated circuitry of claim 4 wherein a plurality of electronic devices are formed and interconnected in said second area.
Claim 7
Dependent Claim
21 words
The switch and associated circuitry of claim 5 wherein said electronic devices are interconnected to cause switching of said semiconductor switch.
Claim 8
Dependent Claim
35 words
The switch and associated circuitry of claim 6 wherein one of said electronic devices is sensitive to an external condition such that said semiconductor switch is switched upon the sensing of a predetermined external condition.
Claim 9
Dependent Claim
25 words
The switch and associated circuitry of claim 6 wherein said electronic devices are connected to an interior layer of said switch to cause switching thereof.
Claim 10
Dependent Claim
24 words
The switch and associated circuitry of claim 6 wherein said electronic devices inject carriers into an internal layer to cause switching of said switch.
Claim 11
Dependent Claim
22 words
The switch and associated circuitry of claim 1 and further comprising: a second channel formed across the other of said outer layers.
Claim 12
Dependent Claim
24 words
The switch and associated circuitry of claim 1 wherein at least one electronic device is formed in each outer layer in said second area.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-24 | 1985-02-23 | 1985-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-24 | 1989-02-23 | 1989-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-24 | 1993-02-23 | 1993-08-25 | $7700.00 | Window Closed / Lapsed |