US4619894A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-transformation thermal resist
Assignee: Massachusetts Institute of Technology
•
Filing: 1985-04-12
•
Granted: 1986-10-28
•
Expires: 2005-04-12
Abstract
Abstract A negative resist and masking process for microfabrication comprising an evaporated film of aluminum and oxygen which, in the as-deposited state, is highly conductive and has low resistance to etching, but when exposed to active radiation, such as by pulse laser thermal excitation, converts to a low electrical conductivity, high etchant resistive phase.
Inventors
- 👤 Carl O. Bozler
- 👤 Daniel J. Ehrlich
- 👤 Jeffrey Y. Tsao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:40
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/081; C23C14/58; C23C14/5806; C23C14/5813; C23C14/5873; H10P76/00; H10P76/40; H10P76/405; H10P76/408; H10P76/4085; H10P95/00; Y; Y10; Y10S; Y10S430/00; Y10S430/143; Y10S430/146; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
102 words
A process for forming a selected pattern on the surface of a substrate, comprising: (a) forming on said substrate a substantially etchable, low ohmic resistivity cermet layer of aluminum and Al 2 O 3 by depositing aluminum on said substrate in an oxygen environment; (b) heating selected regions of said cermet layer by exposing such selected regions to radiant energy to selectively transform said exposed regions from said substantially etchable low ohmic resistivity material to substantially less-etchable material higher ohmic resistivity; and (c) removing the unexposed regions to form a pattern of less etchable higher ohmic resistivity material on said substrate surface.
Claim 2
Dependent Claim
102 words
A process for forming a selected pattern on the surface of a substrate, comprising: (a) forming on said substrate a substantially etchable, low ohmic resistivity cermet layer of aluminum and Al 2 O 3 by depositing aluminum on said substrate in an oxygen environment; (b) heating selected regions of said cermet layer by exposing such selected regions to radiant energy to selectively transform said exposed regions from said substantially etchable low ohmic resistivity material to substantially less-etchable material higher ohmic resistivity; and (c) removing the unexposed regions to form a pattern of less etchable higher ohmic resistivity material on said substrate surface.
Claim 3
Dependent Claim
13 words
The process according to claim 1 in which said substrate comprises semiconductor material.
Claim 4
Dependent Claim
33 words
The process according to claim 1 in which said source of radiant energy is a source selected from the class consisting of electron beam, laser beam, flash lamps, ion bean and X-ray source.
Claim 5
Dependent Claim
17 words
The process according to claim 1 in which the temperature at deposition is less than 800° C.
Claim 6
Dependent Claim
17 words
The process of claim 1 in which the thickness of the as-deposited layer is about 30 nm.
Claim 7
Dependent Claim
102 words
A process for forming a selected pattern on the surface of a substrate, comprising: (a) forming on said substrate a substantially chemical etch resistant cermet layer of aluminum and an element selected from either oxygen or nitrogen by depositing aluminum on said substrate in an environment containing said element; (b) heating selected regions of said cermet layer by exposing such selected regions to thermal energy to selectively transform said exposed regions from substantially chemical etch resistant material to substantially chemically etchable material; and (c) removing the unexposed regions to form a pattern of substantially chemical etch resistant material on said substrate surface.
Claim 8
Dependent Claim
102 words
A process for forming a selected pattern on the surface of a substrate, comprising: (a) forming on said substrate a substantially chemical etch resistant cermet layer of aluminum and an element selected from either oxygen or nitrogen by depositing aluminum on said substrate in an environment containing said element; (b) heating selected regions of said cermet layer by exposing such selected regions to thermal energy to selectively transform said exposed regions from substantially chemical etch resistant material to substantially chemically etchable material; and (c) removing the unexposed regions to form a pattern of substantially chemical etch resistant material on said substrate surface.
Claim 9
Dependent Claim
19 words
The process of claim 6 wherein the cermet layer is formed of Al and Al 2 O 3 .
Claim 10
Dependent Claim
18 words
The process of claim 7 wherein the cermet layer is formed by depositing aluminum in an oxygen ambient.
Claim 11
Dependent Claim
20 words
The process of claim 8 wherein the sheet resistance of the layer as-deposited is in the order of 100 ohms/square.
Claim 12
Independent Claim
121 words
The method of forming a resist pattern comprising the steps of: (a) depositing a ceramic/metal film of Al/O on a semiconductor substrate by evaporating Al in an O 2 ambient at about 2-5× -6 Torr; (b) irradiating selected portions of the film with active radiation passed through a pattern defined by a photo-mask to heat the selected portions of the film and transform the selected portions from an electrically-conducting metallic phase to an electrically-insulating phase much less soluble to certain acid etchants than in the metallic phase; (c) removing the unheated portions of the film with an acid etchant leaving a resist pattern in the transformed film layer for use as a mask for further etching of the underlying substrate structure.
Claim 13
Independent Claim
121 words
The method of forming a resist pattern comprising the steps of: (a) depositing a ceramic/metal film of Al/O on a semiconductor substrate by evaporating Al in an O 2 ambient at about 2-5× -6 Torr; (b) irradiating selected portions of the film with active radiation passed through a pattern defined by a photo-mask to heat the selected portions of the film and transform the selected portions from an electrically-conducting metallic phase to an electrically-insulating phase much less soluble to certain acid etchants than in the metallic phase; (c) removing the unheated portions of the film with an acid etchant leaving a resist pattern in the transformed film layer for use as a mask for further etching of the underlying substrate structure.
Claim 14
Dependent Claim
18 words
The method of claim 10 wherein the irradiation is achieved by a single laser pulse of 20 ns.
Claim 15
Dependent Claim
19 words
The method of claim 10 wherein the irradiation occurs at ambient temperature below the warping temperature of the pattern.
Claim 16
Dependent Claim
15 words
The method of claim 10 wherein the irradiation takes place at temperatures below 800° C.
References Cited (Backward Citations)
US3622319A
Cited
US3585091A
Cited
US3674580A
Cited
US3873341A
Cited
US3867148A
Cited
US4132586A
Cited
US4219379A
Cited
US4227975A
Cited
US4289574A
Cited
US4343875A
Cited
US4350729A
Cited
US4314874A
Cited
US4316920A
Cited
US4394434A
Cited
US4460413A
Cited
US4390394A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-27 | 1990-04-28 | 1990-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-27 | 1994-04-28 | 1994-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-27 | 1998-04-28 | 1998-10-28 | $7700.00 | Window Closed / Lapsed |