US3585091A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for etching thin layers of oxide or nitride
Assignee: AT&T Inc
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Filing: 1967-12-08
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Granted: 1971-06-15
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Expires: 1987-12-08
Abstract
Abstract THIS APPLICATION DISCLOSES A METHOD FOR SELECTIVELY ETCHING A THIN OXIDE OR NITRIDE LAYER ON A SEMICONDUCTIVE BODY. IN PARTICULAR, AN OXIDE OR NITRIDE LAYER IS SELECTIVELY ETCHED BY DEPOSITING A THIN LAYER OF AN ACTIVE METAL UPON IT, INDUCING A CHEMICAL REDUCTION REACTION BETWEEN THE ACTIVE METAL AND THE OXIDE OR NITRIDE IN SELECTED AREAS, AND SELECTIVELY REMOVING THE MORE READILY DISSOLVED REACTED AREAS.
Inventors
- 👤 Martin P Lepselter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:55
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; C; C23; C23F; C23F1/00; H10P95/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-14 | 1974-12-14 | 1975-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-14 | 1978-12-14 | 1979-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-14 | 1982-12-14 | 1983-06-15 | $7700.00 | Window Closed / Lapsed |