Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects

Claim 2

An improvement in the process for forming a lateral polysilicon diode in a polysilicon layer on an integrated circuit structure wherein said polysilicon layer is initially plasma etched to form the polysilicon body for said diode and then selectively doped sufficiently in two areas to form a low resistance semiconductor diode; said improvement comprising: treating the lateral edges of said polysilicon remaining after said plasma etch to remove defects therein whereby current leakage around the lateral edges of the resulting diode are reduced resulting in a polysilicon diode characterized by low reverse current leakage, a breakdown voltage of at least 5 volts, and low series resistance permitting high current flow before being limited by saturation.

Claim 3

The improved process of claim 1 wherein said treating of said lateral edges comprising wet etching the lateral edges of said polysilicon.

Claim 4

The improved process of claim 2 wherein said etched lateral edges of said polysilicon are protected by silicon oxide thermally grown over said wet etched lateral edges.

Claim 5

An improved process for forming, in an integrated circuit structure, a polysilicon diode characterized by low reverse current leakage, a high breakdown voltage, and low series resistance thereby permitting high current flow; said process comprising: (a) depositing at least a layer of polysilicon on an integrated circuit substrate; (b) masking and selectively plasma etching away a portion of said layer of polysilicon; (c) treating the sidewall of the remaining polysilicon layer to remove defects in said polysilicon sidewall; (d) thermally growing silicon dioxide over said treated sidewall to protect said treated sidewall; (e) doping said polysilicon layer with a first dopant; and (f) selectively doping a portion of said doped polysilicon layer with a second dopant to form said diode; whereby said treatment of said sidewall to remove defects and subsequent growing of thermal oxide thereon reduces reverse current leakage through the sidewall thereby permitting higher doping concentrations to reduce the series resistance without adversely affecting the reverse current leakage.

Claim 6

An improved process for forming, in an integrated circuit structure, a polysilicon diode characterized by low reverse current leakage, a high breakdown voltage, and low series resistance thereby permitting high current flow; said process comprising: (a) depositing at least a layer of polysilicon on an integrated circuit substrate; (b) masking and selectively plasma etching away a portion of said layer of polysilicon; (c) treating the sidewall of the remaining polysilicon layer to remove defects in said polysilicon sidewall; (d) thermally growing silicon dioxide over said treated sidewall to protect said treated sidewall; (e) doping said polysilicon layer with a first dopant; and (f) selectively doping a portion of said doped polysilicon layer with a second dopant to form said diode; whereby said treatment of said sidewall to remove defects and subsequent growing of thermal oxide thereon reduces reverse current leakage through the sidewall thereby permitting higher doping concentrations to reduce the series resistance without adversely affecting the reverse current leakage.

Claim 7

The process of claim 4 wherein said polysilicon diode sidewall treatment step comprises wet etching said polysilicon sidewall to remove defects.

Claim 8

The process of claim 5 wherein said sidewall is wet etched sufficiently to remove from 300 to 500 Angstroms of polysilicon sidewall.

Claim 9

The process of claim 6 wherein said wet etching step is carried out for a time period sufficient to remove about 400 Angstroms of polysilicon sidewall.

Claim 10

The process of claim 7 wherein said thermal oxide growing step includes growing said silicon dioxide over said etched polysilicon sidewall to a thickness of from 3000 to 4000 Angstroms to protect said sidewall.

Claim 11

The process of claim 7 including, prior to said plasma etching step, the further steps of growing a first buffer oxide layer over said polysilicon layer; and placing a silicon nitride layer over said buffer oxide layer; and wherein said plasma etching step etches through said polysilicon, silicon dioxide, and silicon nitride layers to leave a multilayer portion generally defining said diode shape.

Claim 12

The process of claim 9 including the steps of growing a first thermal oxide layer over said wet etched sidewall; masking said nitride layer to define two spaced apart contact areas; removing that portion of said nitride layer between said nitride-coated contact areas; and thermally growing silicon dioxide over the exposed silicon dioxide layer under said etched away portion of said silicon nitride layer and over said previously grown silicon dioxide on said sidewalls.

Claim 13

The process of claim 10 wherein said last step of thermal oxide growth is carried out for a time period sufficient to place a silicon dioxide layer of from 3000 to 4000 Angstroms over said silicon dioxide exposed by said silicon nitride removal and over said initially grown silicon dioxide on said sidewall.

Claim 14

The process of claim 11 including doping said polysilicon with a dopant having a sufficient concentration to penetrate through said silicon dioxide and silicon nitride layers overlying said polysilicon.

Claim 15

The process of claim 12 including doping said polysilicon with a dopant having a sufficient concentration to provide a resistance in the polysilicon of from 100 to 1000 ohms per square.

Claim 16

The process of claim 11 wherein said doping step includes doping said polysilicon with a dopant implanted at sufficient energy and in sufficient concentration to penetrate through overlying silicon dioxide and silicon nitride portions.

Claim 17

The process of claim 14 wherein said doping step comprises implanting said boron at a dose of from about 1×10 14 to 1×10 15 atoms cm -2 and an energy of about 180 KEV.

Claim 18

The process of claim 15 including the steps of removing said remaining silicon nitride after said boron doping; coating said remaining portions with photoresist; patterning said photoresist to expose one of said contact areas; and doping said exposed contact area with a dopant selected from the class consisting of arsenic and phosphorus to form a second doped region in said polysilicon thereby forming a semiconductor diode junction therein.

Claim 19

The process of claim 16 including the steps of removing said remaining silicon nitride after said boron doping step and using an oversize mask to define and open the areas for said contact doping step thereby using the oxide edge to self define the diode.

Claim 20

The process of claim 16 wherein said doping step comprises implanting said dopant at a dose of from about 1×10 15 to 1×10 16 atoms cm -2 at an energy of about 180KEV.

Claim 21

An improved process for forming, in an integrated circuit structure, a lateral polysilicon diode characterized by low reverse current leakage, a breakdown voltage of at least 5 volts, and low series resistance thereby permitting high current flow during normal operating conditions; said process comprising: (a) depositing a layer of polysilicon of from 3000 to 6000 Angstroms thickness over said integrated circuit structure; (b) thermally growing a silicon dioxide buffer layer of at least 300 Angstroms over said polysilicon layer; (c) depositing a silicon nitride layer of at least 800 Angstroms thickness over said silicon dioxide layer; (d) masking and plasma etching said layers to define said diode; (e) treating the exposed edges of said polysilicon layer defining said diode by chemically etching to remove at least about 300 Angstroms of polysilicon to thereby remove defects in said edges caused by said plasma etching; (f) thermally growing silicon dioxide over said wet etched polysilicon edges; (g) masking said layers to define 2 contact areas; (h) etching said silicon nitride to remove the silicon nitride between said 2 contact areas; (i) thermally growing further silicon dioxide in said area exposed by removal of said silicon nitride and over said silicon dioxide on said edges to provide a thickness in both regions of at least 3500 Angstroms; (j) implanting a boron dopant into said polysilicon at an energy of about 180 KEV and a dose of from about 1×10 14 to 1×10 15 atoms cm -2 to form a p-doped region in said polysilicon; (k) removing the remainder of said nitride layer over said contact areas; (l) placing a photoresist layer over said layers and masking said photoresist to expose one of said contact areas; (m) implanting a phosphorus dopant into said exposed contact area at a dose of from about 1×10 15 atoms cm -2 to 1×10 16 atoms cm -2 at an energy level of about 180 KEV to form an n-doped area within a portion of said p-doped polysilicon and annealing said doped polysilicon to thereby form a semiconductor diode; said treatment of said plasma etched edges to remove defects acting to reduce surface leakage around the edges of said diode thereby reducing the reverse current leakage of said device.

Claim 22

An improved process for forming, in an integrated circuit structure, a lateral polysilicon diode characterized by low reverse current leakage, a breakdown voltage of at least 5 volts, and low series resistance thereby permitting high current flow during normal operating conditions; said process comprising: (a) depositing a layer of polysilicon of from 3000 to 6000 Angstroms thickness over said integrated circuit structure; (b) thermally growing a silicon dioxide buffer layer of at least 300 Angstroms over said polysilicon layer; (c) depositing a silicon nitride layer of at least 800 Angstroms thickness over said silicon dioxide layer; (d) masking and plasma etching said layers to define said diode; (e) treating the exposed edges of said polysilicon layer defining said diode by chemically etching to remove at least about 300 Angstroms of polysilicon to thereby remove defects in said edges caused by said plasma etching; (f) thermally growing silicon dioxide over said wet etched polysilicon edges; (g) masking said layers to define 2 contact areas; (h) etching said silicon nitride to remove the silicon nitride between said 2 contact areas; (i) thermally growing further silicon dioxide in said area exposed by removal of said silicon nitride and over said silicon dioxide on said edges to provide a thickness in both regions of at least 3500 Angstroms; (j) implanting a boron dopant into said polysilicon at an energy of about 180 KEV and a dose of from about 1×10 14 to 1×10 15 atoms cm -2 to form a p-doped region in said polysilicon; (k) removing the remainder of said nitride layer over said contact areas; (l) placing a photoresist layer over said layers and masking said photoresist to expose one of said contact areas; (m) implanting a phosphorus dopant into said exposed contact area at a dose of from about 1×10 15 atoms cm -2 to 1×10 16 atoms cm -2 at an energy level of about 180 KEV to form an n-doped area within a portion of said p-doped polysilicon and annealing said doped polysilicon to thereby form a semiconductor diode; said treatment of said plasma etched edges to remove defects acting to reduce surface leakage around the edges of said diode thereby reducing the reverse current leakage of said device.