High voltage dielectrically isolated dual gate solid-state switch

Claim 2

A switching element comprising a semiconductor body having a bulk region of one conductivity type and of relatively high resistivity; the body also having anode, gate, and cathode regions spaced apart and localized along a common top planar surface of the body, each being of relatively low resistivity, the cathode and gate regions being of the opposite conductivity type from that of the bulk region and the anode region being of the same conductivity type as that of the bulk region; separate cathode, anode, and gate electrodes attached to the cathode, anode, and gate regions, respectively; the a semiconductor support member separated from the semiconductor body by a dielectric layer; a semiconductor layer of the same conductivity type as the cathode region, the semiconductor layer being electrically coupled to the gate region and being sandwiched between the dielectric layer and the semiconductor body; the parameters of the switching element being such that with the potential of the anode region being greater than that of the cathode region and the potential of the gate region being insufficient to essentially completely deplete a cross-sectional portion of the bulk region of the semiconductor body between the anode and cathode regions, a substantial current flows between the anode and cathode regions via the bulk region, and with the anode region being forward-biased with respect to the cathode region and with the potential of the gate region being of sufficiently greater magnitude than that of the anode region so as to essentially completely deplete a cross-sectional portion of the bulk region of the semiconductor body located between the anode and cathode regions and to cause this portion of the bulk region of the semiconductor body to be at a potential which is greater in magnitude than the anode region, an interrupting of the current between the anode and cathode regions occurs.

Claim 3

A switching element in according with claim 1 in which the gate region is localized on the common surface intermediate between the cathode and anode regions.

Claim 4

A switching element in accordance with claim 1 further comprising a semiconductor shield region within the semiconductor body and being of the same conductivity type as the bulk but of lower resistivity, the shield region surrounding the cathode region so as to separate the cathode region from the bulk region of the semiconductor body.

Claim 5

A plurality of switching elements in accordance with claim 1 with each included in the semiconductor support member and dielectrically isolated from one another.

Claim 6

A pair of switching elements each in accordance with claim 1 with the gate electrodes of the pair connected to each other and the anode electrode of each connected to the cathode electrode of the other to provide a bilateral switch.

Claim 7

A switching element comprising a semiconductor body having a hulk region of one conductivity type and of relatively high resistivity; the body also having anode gate, and cathode regions spaced apart and localized along a common planar surface of the body, each being of relatively low resistivity, the cathode and gate regions being of the opposite conductivity type from that of the bulk region, and the anode region being of the same conductivity type as the bulk, region; and a separate cathode, anode, and gate electrode connected to the cathode anode, and gate region, respectively; a semiconductor support member separated from a semiconductor layer by a dielectric layer; the semiconductor layer of the same conductivity type as that of the gate region, the semiconductor layer being sandwiched between the dielectric layer and the semiconductor body; the semiconductor support member having a separate electrode coupled thereto which is adapted to be held at the most positive potential used with the switching element if the gate region is of n+ type conductivity, and at the most negative potential used with the switching element if the gate region is of p+ type conductivity, the parameters of the various portions of the structure being such that with the potential of the anode region being forward-biased with respect to the cathode region and the potential of the gate region being insufficient to deplete a cross-sectional portion of the bulk of the semiconductor body between the anode and cathode regions and to cause this portion of thhe bulk of the semiconductor body to be at a potential which is greater in magnitude than that of the anode region, there is facilitated a substantial current flow between the anode and cathode regions via the bulk, and with the potential of the anode region being forward-biased with respect to the cathode region and with the potential of the gate region being of a sufficient magnitude relative to the anode region to deplete the portion of the bulk of the semiconductor body between the anode and cathode regions there is facilitated an inhibiting or interrupting (cutting off) of current flow between the anode and cathode regions.

Claim 8

A switching element comprising a semiconductor body having a hulk region of one conductivity type and of relatively high resistivity; the body also having anode gate, and cathode regions spaced apart and localized along a common planar surface of the body, each being of relatively low resistivity, the cathode and gate regions being of the opposite conductivity type from that of the bulk region, and the anode region being of the same conductivity type as the bulk, region; and a separate cathode, anode, and gate electrode connected to the cathode anode, and gate region, respectively; a semiconductor support member separated from a semiconductor layer by a dielectric layer; the semiconductor layer of the same conductivity type as that of the gate region, the semiconductor layer being sandwiched between the dielectric layer and the semiconductor body; the semiconductor support member having a separate electrode coupled thereto which is adapted to be held at the most positive potential used with the switching element if the gate region is of n+ type conductivity, and at the most negative potential used with the switching element if the gate region is of p+ type conductivity, the parameters of the various portions of the structure being such that with the potential of the anode region being forward-biased with respect to the cathode region and the potential of the gate region being insufficient to deplete a cross-sectional portion of the bulk of the semiconductor body between the anode and cathode regions and to cause this portion of thhe bulk of the semiconductor body to be at a potential which is greater in magnitude than that of the anode region, there is facilitated a substantial current flow between the anode and cathode regions via the bulk, and with the potential of the anode region being forward-biased with respect to the cathode region and with the potential of the gate region being of a sufficient magnitude relative to the anode region to deplete the portion of the bulk of the semiconductor body between the anode and cathode regions there is facilitated an inhibiting or interrupting (cutting off) of current flow between the anode and cathode regions.