Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
162 words
A SEMICONDUCTOR DEVICE COMPRISING: A BODY OF SEMICONDUCTOR MATERIAL DEFINING TWO MAJOR SURFACES, SAID BODY EXHIBITING A FIRST CONDUCTIVITY TYPE, A BASE ONE REGION FORMED IN SAID BODY ADJACENT ONE OF SAID MAJOR SURFACES, SAID BASE ONE REGION BEING OF THE FIRST CONDUCTIVITY TYPE AND EXHIBITING A LOWER RESISTIVITY THAN THE RESISTIVITY OF THE BULK OF SAID BODY, A PLURALITY OF EMITTER REGIONS FORMED IN SAID BODY ADJACENT SAID ONE MAJOR SURFACE, SAID EMITTER REGIONS BEING OF A SECOND CONDUCTIVITY TYPE AND WHEREIN THE SPACINGS BETWEEN SAID EMITTER REGIONS AND SAID BASE ONE REGION ARE DIFFERENT, A RESTRAINING REGION FORMED IN SAID BODY ADJACENT SAID ONE MAJOR SURFACE AND CONTIGUOUS WITH SAID BASE ONE REGION AND SITUATED BETWEEN SAID BASE ONE REGION AND SAID EMITTER REGIONS, SAID RESTRAINING REGION BEING OF THE SECOND CONDUCTIVITY TYPE AND RESTRAINING THE SPREADING OF SAID BASE ONE REGION DURING OPERATION OF SAID SEMICONDUCTOR DEVICE, AND WHEREIN A PORTION OF SAID BODY COMPRISES A BASE TWO REGION.
Claim 2
Dependent Claim
162 words
A SEMICONDUCTOR DEVICE COMPRISING: A BODY OF SEMICONDUCTOR MATERIAL DEFINING TWO MAJOR SURFACES, SAID BODY EXHIBITING A FIRST CONDUCTIVITY TYPE, A BASE ONE REGION FORMED IN SAID BODY ADJACENT ONE OF SAID MAJOR SURFACES, SAID BASE ONE REGION BEING OF THE FIRST CONDUCTIVITY TYPE AND EXHIBITING A LOWER RESISTIVITY THAN THE RESISTIVITY OF THE BULK OF SAID BODY, A PLURALITY OF EMITTER REGIONS FORMED IN SAID BODY ADJACENT SAID ONE MAJOR SURFACE, SAID EMITTER REGIONS BEING OF A SECOND CONDUCTIVITY TYPE AND WHEREIN THE SPACINGS BETWEEN SAID EMITTER REGIONS AND SAID BASE ONE REGION ARE DIFFERENT, A RESTRAINING REGION FORMED IN SAID BODY ADJACENT SAID ONE MAJOR SURFACE AND CONTIGUOUS WITH SAID BASE ONE REGION AND SITUATED BETWEEN SAID BASE ONE REGION AND SAID EMITTER REGIONS, SAID RESTRAINING REGION BEING OF THE SECOND CONDUCTIVITY TYPE AND RESTRAINING THE SPREADING OF SAID BASE ONE REGION DURING OPERATION OF SAID SEMICONDUCTOR DEVICE, AND WHEREIN A PORTION OF SAID BODY COMPRISES A BASE TWO REGION.
Claim 3
Dependent Claim
88 words
A semiconductor device according to claim 1 further comprising a metallic base two contact adjacent a substantial portion of the other one of said major surfaces, a plurality of metallic emitter contacts, one of said emitter contacts covering the portion of said one major surface that is contiguous with each of said emitter regions, and a metallic base one contact covering the portion of said one major surface adjacent said base one region and said restraining region thus electrically connecting said base one region and said restraining region.
Claim 4
Dependent Claim
69 words
A semiconductor device according to claim 1 further comprising coupling means for coupling said device to an external circuit, said coupling means comprising a base two coupling means in an electrically conductive relationship with said base two region, base one coupling means in an electrically conductive relationship with said base one region, and emitter coupling means in an electrically conductive relationship with at least one of said emitter regions.
Claim 5
Dependent Claim
49 words
A semiconductor device according to claim 3 wherein said base two region comprises the region of said body adjacent the other one of said major surfaces and said base two coupling means comprises a layer of gold with a dopant of the first type on said other major surface.
Claim 6
Dependent Claim
67 words
A semiconductor device according to claim 4 further comprising a thin layer of insulative material overlying substantially all portions of said one major surface except those portions contiguous with said base one region, said restraining region and said several emitter regions, said device further comprising a metallic field relief plate overlying said insulative material on the portions separating said base one region and said several emitter regions.
Claim 7
Dependent Claim
49 words
A semiconductor device according to claim 5 wherein said layer of insulative material comprises a layer of semiconductor oxide and wherein a portion of said field relief plate extends to a point near the periphery of said one major surface and contacts said one major surface at said point.
Claim 8
Dependent Claim
15 words
A semiconductor device according to claim 6 wherein said two major surfaces are substantially parallel.
Claim 9
Dependent Claim
23 words
A semiconductor device according to claim 6 wherein said first conductivity type is N conductivity and said second conductivity type is P conductivity.
Claim 10
Dependent Claim
24 words
A semiconductor device according to claim 6 wherein said restraining region is a closed loop and surrounds a portion of said base one region.
Claim 11
Dependent Claim
14 words
A semiconductor device according to claim 6 wherein said device comprises a unijunction transistor.
Claim 12
Dependent Claim
67 words
A semiconductor device according to claim 1 further comprising a thin layer of insulative material overlying substantially all portions of said one major surface except those portions contiguous with said base one region, said restraining region and said several emitter regions, said device further comprising a metallic field relief plate overlying said insulative material on the portions separating said base one region and said several emitter regions.
Claim 13
Dependent Claim
49 words
A semiconductor device according to claim 11 wherein said layer of insulative material comprises a layer of semiconductor oxide and wherein a portion of said field relief plate extends to a point near the periphery of said one major surface and contacts said one major surface at said point.