Patent US4592792A successfully refreshed from Google Patents.
US4592792A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming uniformly thick selective epitaxial silicon
Assignee: Intersil Corp
•
Filing: 1985-01-23
•
Granted: 1986-06-03
•
Expires: 2005-01-23
Abstract
Abstract Monocrystalline silicon is deposited on first and second portions of a substrate, the first and second portions having substantially unequal dimensions. The method comprises subjecting the substrate to a silicon-source gas and a predetermined concentration of chloride at a predetermined temperature. The chloride concentration is selected so as to create a substantially equally thick monocrystalline silicon deposit on each of the substrate portions.
Inventors
- 👤 John F. Corboy, Jr.
- 👤 Lubomir L. Jastrzebski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/026; Y10S148/05
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
91 words
In a method for depositing monocrystalline silicon on first and second selective portions of a substrate defined by a mask, said first portion having substantially unequal dimensions from said second portion, said method comprising subjecting said substrate to a silicon-source gas and chloride source at a predetermined temperature, the improvement comprising: exposing said substrate to a predetermined concentration of chloride during said depositing, said chloride concentration being selected so as to create a monocrystalline silicon deposit on each of said portions, the thickness of each of said deposits being substantially equal.
Claim 2
Dependent Claim
91 words
In a method for depositing monocrystalline silicon on first and second selective portions of a substrate defined by a mask, said first portion having substantially unequal dimensions from said second portion, said method comprising subjecting said substrate to a silicon-source gas and chloride source at a predetermined temperature, the improvement comprising: exposing said substrate to a predetermined concentration of chloride during said depositing, said chloride concentration being selected so as to create a monocrystalline silicon deposit on each of said portions, the thickness of each of said deposits being substantially equal.
Claim 3
Dependent Claim
16 words
A method in accordance with claim 1 comprising providing HCl as a source of said chloride.
Claim 4
Dependent Claim
19 words
A method in accordance with claim 1 further comprising exposing said substrate to a carrier gas during said depositing.
Claim 5
Dependent Claim
13 words
A method in accordance with claim 3 wherein said carrier gas is hydrogen.
Claim 6
Dependent Claim
24 words
A method in accordance with claim 1 wherein said silicon-source gas is selected from the group consisting of dichlorosilane, silane, silicon tetrachloride and trichlorosilane.
Claim 7
Dependent Claim
22 words
A method in accordance with claim 1 wherein said depositing is performed at a pressure equal to or less than 760 Torr.
Claim 8
Dependent Claim
15 words
A method in accordance with claim 1 wherein said depositing is performed at 50 Torr.
Claim 9
Dependent Claim
25 words
A method in accordance with claim 1 further comprising exposing said silicon deposits to a silicon-etching gas following said exposure to silicon-source gas and chloride.
Claim 10
Dependent Claim
16 words
A method in accordance with claim 8 comprising providing HCl as a source of said chloride.
Claim 11
Dependent Claim
32 words
A method in accordance with claim 9 wherein said exposure to silicon-source gas and HCl is for approximately 12 seconds and said exposure to the silicon-etching gas is for approximately 30 seconds.
Claim 12
Dependent Claim
30 words
A method in accordance with claim 2 wherein said silicon-source gas is dichlorosilane and the volume ratio of HCl to dichlorosilane is in the range of approximately 0.67 to 2.67.
Claim 13
Dependent Claim
36 words
A method in accordance with claim 11 wherein said depositing further comprises a hydrogen flow rate of 160 liters/minute, an HCl flow rate of approximately 1.3 liters/minute and a dichlorosilane flow rate of approximately 0.75 liters/minute.
Claim 14
Dependent Claim
21 words
A method in accordance with claim 1 further comprising defining said first and second selective portions with a silicon dioxide mask.
References Cited (Backward Citations)
US3239372A
Cited
US3850707A
Cited
US3511702A
Cited
US3425879A
Cited
US3764409A
Cited
US3661636A
Cited
US3945864A
Cited
US4412868A
Cited
US4400411A
Cited
US4522662A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-02 | 1989-12-02 | 1990-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-02 | 1993-12-02 | 1994-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-02 | 1997-12-02 | 1998-06-03 | $7700.00 | Window Closed / Lapsed |