Semiconductors

Claim 1

A PROCESS FO PRODUCING A MASTER CHIP OF SEMI-CONDUCTIVE MATERIAL FOR PRODUCTION OF INTEGRATED CIRCUIT SEMICONDUCTOR DEVICES HAVING DIELECTRICALLY ISOLATED SINGLE CRYSTAL REGIONS OF P AND N TYPE CONDUCTIVIITY COMPRISING: A. FORMING A SILICON XOIDE LAYER ON AT LEAST ONE SURFACE OF A BODY OF SINGLE CRYSTAL SILICON MATERIAL, B. EXPOSING AT LEAST ONE LIMITED REGION OF SAID SILICON MATERIAL BY REMOVING PORTIONS OF THE OXIDE COATING, C. EPITAIALLY DEPOSITING SILICON OF A FIRST CONDUCTIVITY TPYE ON THE EXPOSED PORTION OF SAID SILICON MATERIAL TO PREDETERMINED THICKNESS, D. PRODUCING A SILICON OXIDE LAYER OVER THE EPITAXIALLY DEPOSITED FIRST CONDUCTIVITY TYPE MATERIAL, E. EXPOSING AT LEAST ONE SECOND LIMITED REGION OF SAID SILICON MATERIAL BY REMOVING PORTONS OF THE OXIDE COATING, F. EPITAXIALLY DEPOSITING SILICON OF A SECOND CONDUCTIVITY TYPE ON THE EXPOSED PORTIONS OF SAID SILICON MATERIAL TO A PREDETERMINED THICKNESS, G. PRODUCING A SILICON OXIDE LAYER OVER THE EPITAXIALLY DEPOSITED SECOND CONDUCTIVITY TYPE MATERIAL, H. DEPOSITING A POLY CRYSTALLINE SILICON MATERIAL OVER THE ASSEMBLY TO A PREDETERMINED THICKNESS, I. REMOVING ALL OF THE ORIGINAL SINGLE CRYSTAL SILICON MATERIAL TO THEREBY PRODUCE A BODY CONTAINING ISLANDS OF SINGLE CRYSTAL SILICON MATERIAL OF OPPOSITE CONDUCTIVITY TYPE DIELECTRICALLY ISOLATED FROM ONE ANOTHER.

Claim 4

A method of forming an integrated circuit structure comprising the steps of: (a) providing a semiconductor crystal body; (b) depositing a first oxide layer over a surface of said body; (c) selectively removing a portion of said first oxide layer to form an opening therein and expose a first portion of said surface of said body through said opening; (d) growing a first epitaxial layer of a first conductivity type on said first portion of said surface of said body exposed through said opening in said oxide layer; (e) depositing a second oxide layer over said first epitaxial layer and over said first oxide layer; (f) selectively removing a portion of said first and second oxide layers to form a further opening therein and expose a second portion of said surface of said body through said further opening; (g) growing a second epitaxial layer of a second conductivity type on said second portion of said surface of said body exposed through said further opening; (h) depositing a further oxide layer over said second epitaxial layer and over said second oxide layer; (i) forming a crystalline deposit over said further oxide layer; and (j) removing said body to expose a surface of said first epitaxial layer and to expose a surface of said second epitaxial layer.

Claim 5

A method of forming an integrated circuit structure comprising the steps of: (a) providing a semiconductor crystal body; (b) depositing a first oxide layer over a surface of said body; (c) selectively removing a portion of said first oxide layer to form an opening therein and expose a first portion of said surface of said body through said opening; (d) growing a first epitaxial layer of a first conductivity type on said first portion of said surface of said body exposed through said opening in said oxide layer; (e) depositing a second oxide layer over said first epitaxial layer and over said first oxide layer; (f) selectively removing a portion of said first and second oxide layers to form a further opening therein and expose a second portion of said surface of said body through said further opening; (g) growing a second epitaxial layer of a second conductivity type on said second portion of said surface of said body exposed through said further opening; (h) depositing a further oxide layer over said second epitaxial layer and over said second oxide layer; (i) forming a crystalline deposit over said further oxide layer; and (j) removing said body to expose a surface of said first epitaxial layer and to expose a surface of said second epitaxial layer.