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US4585671A
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Formation process of amorphous silicon film
Assignee: Mitsui Chemicals Inc
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Filing: 1983-11-15
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Granted: 1986-04-29
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Expires: 2003-11-15
Abstract
Abstract A formation process of an amorphous silicon film, which process comprises subjecting a higher silane containing at least two silicon atoms to photochemical decomposition under radiation of a light having a wavelength of 300 nm or shorter so as to cause amorphous silicon to deposit on a substrate.
Inventors
- 👤 Nobuhisa Kitagawa
- 👤 Masataka Hirose
- 👤 Kazuyoshi Isogaya
- 👤 Yoshinori Ashida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 15:44
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/061; Y10S148/093
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
77 words
A process for forming an amorphous silicon film, which process comprises subjecting a gaseous higher silane represented by the following general formula Si.sub.n H.sub.2n+2 wherein n stands for an integer of 2 or greater to photo-chemical decomposition under radiation of light having a wavelength of 300 nm or shorter, at a temperature of 100° to 300° C. and at a pressure of atmospheric pressure or higher so as to cause amorphous silicon to deposit on a substrate.
Claim 2
Dependent Claim
77 words
A process for forming an amorphous silicon film, which process comprises subjecting a gaseous higher silane represented by the following general formula Si.sub.n H.sub.2n+2 wherein n stands for an integer of 2 or greater to photo-chemical decomposition under radiation of light having a wavelength of 300 nm or shorter, at a temperature of 100° to 300° C. and at a pressure of atmospheric pressure or higher so as to cause amorphous silicon to deposit on a substrate.
Claim 3
Dependent Claim
16 words
The process according to claim 1, wherein the higher silane contains 2 to 6 silicon atoms.
Claim 4
Dependent Claim
15 words
The process according to claim 1, wherein the higher silane is disilane, trisilane or tetrasilane.
Claim 5
Dependent Claim
16 words
The process according to claim 1, wherein the pressure is less than 2 kg/cm 2 -G.
Claim 6
Dependent Claim
26 words
The process according to claim 1, wherein the decomposition is carried out under radiation of an ultraviolet ray having a wavelength of 200 to 300 nm.
Claim 7
Dependent Claim
26 words
The process according to claim 1, wherein the decomposition is carried out under radiation of a far-ultraviolet ray having a wavelength of 200 nm or shorter.
Claim 8
Dependent Claim
18 words
The process according to claim 1 wherein the decomposition is carried out in the absence of mercury vapor.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-28 | 1989-10-28 | 1990-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-28 | 1993-10-28 | 1994-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-28 | 1997-10-28 | 1998-04-29 | $7700.00 | Window Closed / Lapsed |