US4584028A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Neutralization of acceptor levels in silicon by atomic hydrogen
Assignee: Fairchild Semiconductor Corp
•
Filing: 1984-09-24
•
Granted: 1986-04-22
•
Expires: 2004-09-24
Abstract
Abstract A p-type impurity in a silicon semiconductor structure is at least partially neutralized by exposure to atomic hydrogen. The subject method provides an excellent means of modifying the profile of the impurity. Suitable impurities include boron, aluminum, gallium and indium.
Inventors
- 👤 Jacques I. Pankove
- 👤 David E. Carlson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:17
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/94; Y; Y10; Y10S; Y10S148/00; Y10S148/128
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
64 words
A method of modifying the electrical properties of a crystalline silicon semiconductor structure containing a p-type impurity wherein the impurity is substitutional and at least at the surface of the structure, the method comprising exposing the surface of the structure to atomic hydrogen at a temperature of from about 70° to 170° C. for a time sufficient to at least partially neutralize said impurity.
Claim 2
Independent Claim
64 words
A method of modifying the electrical properties of a crystalline silicon semiconductor structure containing a p-type impurity wherein the impurity is substitutional and at least at the surface of the structure, the method comprising exposing the surface of the structure to atomic hydrogen at a temperature of from about 70° to 170° C. for a time sufficient to at least partially neutralize said impurity.
Claim 3
Dependent Claim
22 words
A method in accordance with claim 1, wherein the impurity is selected from the group consisting of boron, aluminum, indium and gallium.
Claim 4
Dependent Claim
20 words
A method in accordance with claim 1, wherein the structure comprises a layer of silicon uniformly doped with the impurity.
Claim 5
Dependent Claim
30 words
A method in accordance with claim 1, wherein said impurity is ion implanted into the structure and the structure is heated to a temperature sufficient to render the implant substitutional.
Claim 6
Dependent Claim
22 words
A method in accordance with claim 1, wherein the structure is exposed to atomic hydrogen at about 110° C. for one hour.
Claim 7
Dependent Claim
12 words
A method in accordance with claim 2, wherein the impurity is boron.
Claim 8
Dependent Claim
18 words
A method in accordance with claim 4, wherein the structure is heated to at least about 900° C.
Claim 9
Independent Claim
89 words
A method of producing adjacent n-type, p-type and n-type regions in a crystalline silicon semiconductor substrate comprising: (a) implanting a n-type silicon structure with a p-type impurity thereby creating a p-type region at the surface thereof; (b) heating the structure to a temperature sufficient to render the implant substitutional; and (c) exposing the surface of the structure to atomic hydrogen at a temperature of from about 70° to 170° C. for a time sufficient to at least partially neutralize the implant thereby creating an p-type region at the surface.
Claim 10
Independent Claim
89 words
A method of producing adjacent n-type, p-type and n-type regions in a crystalline silicon semiconductor substrate comprising: (a) implanting a n-type silicon structure with a p-type impurity thereby creating a p-type region at the surface thereof; (b) heating the structure to a temperature sufficient to render the implant substitutional; and (c) exposing the surface of the structure to atomic hydrogen at a temperature of from about 70° to 170° C. for a time sufficient to at least partially neutralize the implant thereby creating an p-type region at the surface.
Claim 11
Dependent Claim
22 words
A method in accordance with claim 8, wherein said impurity is selected form the group consisting of boron, aluminum gallium and indium.
Claim 12
Dependent Claim
12 words
A method in accordance with claim 9, wherein the impurity is boron.
References Cited (Backward Citations)
US4224084A
Cited
US4331486A
Cited
US4322253A
Cited
US4339285A
Cited
US4364779A
Cited
US4447272A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-21 | 1989-10-21 | 1990-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-21 | 1993-10-21 | 1994-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-21 | 1997-10-21 | 1998-04-22 | $7700.00 | Window Closed / Lapsed |