US4364779A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductor devices including double annealing steps for radiation hardening
Assignee: AT&T Inc
•
Filing: 1980-08-04
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Granted: 1982-12-21
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Expires: 2000-08-04
Abstract
Abstract A silicon device can be made more resistant to the destructive effects of ionizing radiation by a double annealing; the first annealing to a temperature of the order of 400 degrees C. in hydrogen, the second annealing also to a temperature of 400 degrees C. at a time when the device is not sealed against escape of hydrogen.
Inventors
- 👤 Avid Kamgar
- 👤 Ashok K. Sinha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 05:11
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/94; H10W; H10W42/00; H10W42/20; Y; Y10; Y10S; Y10S148/00; Y10S148/024; Y10S257/00; Y10S257/906; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
42 words
A process for manufacturing a silicon semiconductor device in which the semiconductor is heated to a first elevated temperature and exposed to an ambient containing hydrogen, cooled in said ambient to a lower temperature, and then heated to a second elevated temperature,
Claim 2
Dependent Claim
42 words
A process for manufacturing a silicon semiconductor device in which the semiconductor is heated to a first elevated temperature and exposed to an ambient containing hydrogen, cooled in said ambient to a lower temperature, and then heated to a second elevated temperature,
Claim 3
Dependent Claim
20 words
CHRACTERIZED IN THAT the device is pervious to hydrogen during a time interval while being cooled to said lower temperature.
Claim 4
Dependent Claim
20 words
CHRACTERIZED IN THAT the device is pervious to hydrogen during a time interval while being cooled to said lower temperature.
Claim 5
Dependent Claim
38 words
The process of claim 1 in which said second temperature is in the range of about 300 degrees C. to 450 degrees C., and said lower temperature is in the range of about 20 to 80 degrees C.
Claim 6
Dependent Claim
38 words
The process of claim 1 in which said first temperature is in the range of about 300 degrees C. to 450 degrees C., and said lower temperature is in the range of about 20 to 80 degrees C.
Claim 7
Dependent Claim
38 words
The process of claim 3 in which said second temperature is in the range of about 300 degrees C. to 450 degrees C., and said lower temperature is in the range of about 20 to 60 degrees C.
Claim 8
Dependent Claim
15 words
The process of claim 1, 2, 3, or 4 in which the semiconductor is silicon.
Claim 9
Dependent Claim
13 words
The process of claim 5 in which the device is an MOS device.
Claim 10
Dependent Claim
21 words
The process of claim 6 in which the device at said second temperature is exposed to an ambient that contains hydrogen.
Claim 11
Dependent Claim
74 words
In a process for manufacturing a semiconductive silicon device, the steps of: (a) heating the device to a first predetermined temperature; (b) cooling said device in the presence of hydrogen to a second, lower temperature; and, (c) heating said device to a third predetermined temperature, higher than the second temperature, and, maintaining the body at the third temperature, during a time interval when the device is not sealed against the escape of hydrogen therefrom.
Claim 12
Dependent Claim
74 words
In a process for manufacturing a semiconductive silicon device, the steps of: (a) heating the device to a first predetermined temperature; (b) cooling said device in the presence of hydrogen to a second, lower temperature; and, (c) heating said device to a third predetermined temperature, higher than the second temperature, and, maintaining the body at the third temperature, during a time interval when the device is not sealed against the escape of hydrogen therefrom.
Claim 13
Dependent Claim
21 words
The process of claim 8 in which the second temperature is in the range of about 20 to 60 degrees C.
Claim 14
Dependent Claim
23 words
The process of claim 8 in which said third temperature is in the range of about 300 degrees C. to 450 degrees C.
Claim 15
Dependent Claim
25 words
The process of claim 8, 9, or 10 in which said first temperature is in the range of 250 degrees C. to 450 degrees C.
Claim 16
Dependent Claim
13 words
The process of claim 11 in which said device is an MOS device.
Claim 17
Dependent Claim
20 words
The process of claim 12 in which the device during step (c) is exposed to an ambient that contains hydrogen.
Claim 18
Dependent Claim
50 words
A process for making a plurality of semiconductor transistor devices (50) integrated on a major surface (30.5) of a silicon body (30) comprising successively performing each of steps (a) through (c) of claim 8 simultaneously on all devices of said plurality after said devices have been electrically interconnected by metallization.
Claim 19
Dependent Claim
21 words
The process of claim 14 in which the second temperature is in the range of about 20 to 80 degrees C.
Claim 20
Dependent Claim
23 words
The process of claim 14 in which the third temperature is in the range of about 250 degrees C. to 450 degrees C.
Claim 21
Dependent Claim
25 words
The process of claim 14, 15, or 16 in which said first temperature is in the range of 250 degrees C. to 450 degrees C.
Claim 22
Dependent Claim
15 words
The process of claim 17 in which said second temperature is about 20 degrees C.
Claim 23
Dependent Claim
20 words
The process of claim 16 in which the devices are exposed during step (c) to an ambient that contains hydrogen.
Claim 24
Dependent Claim
20 words
The process of claim 18 in which the devices are exposed during step (c) to an ambient that contains hydrogen.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-20 | 1986-06-21 | 1986-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-20 | 1990-06-21 | 1990-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-20 | 1994-06-21 | 1994-12-21 | $7700.00 | Window Closed / Lapsed |