US4184896A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation
Assignee: United States Department of the Air Force
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Filing: 1978-06-06
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Granted: 1980-01-22
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Expires: 1998-06-06
Abstract
Abstract A method of spatially tailoring the surface barrier of MOS devices by means of a scanning electron microscope using ionizing radiation at the silicon dioxide-silicon interface to control the surface charge distribution. The MOS is subsequently annealed at about 300° C. for several hours to stabilize the surface potential.
Inventors
- 👤 Michael F. Millea
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:05
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; H10P; H10P34/00; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/046; Y10S148/093
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
65 words
In metal-oxide-silicon semiconductor devices, a method of spatially tailoring the surface barrier charge comprising; the steps of exposing trapped positive charges in silicon dioxide at a silicon dioxide--silicon interface to a heavy dose of ionizing radiation from a scanning electron microscope, whereby the electrical potential at the silicon surface is lowered; and annealing the device at about 300° C. sufficiently to stabilize the surface potential.
Claim 2
Dependent Claim
65 words
In metal-oxide-silicon semiconductor devices, a method of spatially tailoring the surface barrier charge comprising; the steps of exposing trapped positive charges in silicon dioxide at a silicon dioxide--silicon interface to a heavy dose of ionizing radiation from a scanning electron microscope, whereby the electrical potential at the silicon surface is lowered; and annealing the device at about 300° C. sufficiently to stabilize the surface potential.
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US3755092A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-01-21 | 1983-07-23 | 1984-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-01-21 | 1987-07-23 | 1988-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-01-21 | 1991-07-23 | 1992-01-22 | $7700.00 | Window Closed / Lapsed |