US4583109A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for compensating corrosion effects in integrated semiconductor circuits
Assignee: Siemens AG
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Filing: 1982-08-23
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Granted: 1986-04-15
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Expires: 2002-08-23
Abstract
Abstract Apparatus for compensating corrosion effects due to highly mobile positive ions in insulating oxides of integrated semiconductor circuits, including a ring being disposed on the surface of a semiconductor circuit and being connected to a negative voltage, the ring being formed of a material resistant to corrosion due to positive ions during the operation of semiconductor circuits.
Inventors
- 👤 Jurgen R. Goetz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:36
CPC Classifications
H; H10; H10W; H10W42/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
80 words
Apparatus for compensating corrosion effects due to highly mobile positive ions in insulating oxides of integrated semiconductor circuits, comprising a semiconductor circuit formed of an insulating oxide layer, and a ring being disposed on the surface of said insulating oxide layer forming said semiconductor circuit and being connected to a negative voltage, said ring being formed of a material which resists corrosion by preventing the formation of positive ions in said insulating oxide layer during the operation of semiconductor circuits.
Claim 2
Dependent Claim
80 words
Apparatus for compensating corrosion effects due to highly mobile positive ions in insulating oxides of integrated semiconductor circuits, comprising a semiconductor circuit formed of an insulating oxide layer, and a ring being disposed on the surface of said insulating oxide layer forming said semiconductor circuit and being connected to a negative voltage, said ring being formed of a material which resists corrosion by preventing the formation of positive ions in said insulating oxide layer during the operation of semiconductor circuits.
Claim 3
Dependent Claim
12 words
Apparatus according to claim 1, wherein said ring is formed of polysilicon.
Claim 4
Dependent Claim
13 words
Apparatus according to claim 1, wherein said ring is formed of a silicide.
Claim 5
Dependent Claim
26 words
Apparatus according to claim 3, wherein said ring is formed of a silicide selected from the group consisting of tantalum silicide, molybdenum silicide and tungsten silicide.
Claim 6
Dependent Claim
20 words
Apparatus according to claim 1, including terminal pads for said ring, said terminal pads being disposed within the semiconductor circuit.
Claim 7
Dependent Claim
33 words
Apparatus according to claim 5, including conductor runs being extended across given locations on said ring and being connected to said terminal pads, said ring having interruptions formed therein at said given locations.
Claim 8
Dependent Claim
34 words
Apparatus according to claim 5 or 6, wherein said ring is formed of polysilicon, and including at least one conducting connection being connected from said ring to at least one of said terminal pads.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-14 | 1989-10-14 | 1990-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-14 | 1993-10-14 | 1994-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-14 | 1997-10-14 | 1998-04-15 | $7700.00 | Window Closed / Lapsed |