US3961358A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Leakage current prevention in semiconductor integrated circuit devices
Assignee: RCA Corp
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Filing: 1973-02-21
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Granted: 1976-06-01
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Expires: 1993-02-21
Abstract
Abstract Leakage currents can occur in monolithic semi-conductor integrated circuits through field induced inversion layer channels where the field arises from a layer of distributed charge on the surface of the passivating insulator. These channels can occur at locations where adjacent conductors are at substantially different potentials during circuit operation. At those locations where such channels, if present, could couple a region in the device to another region which may be at some different potential, a conductor layer is disposed on the insulating layer. This conductor layer is adapted to be biased during operation of the device in such a way that an inversion layer channel is not induced thereunder, so that a continuous channel between the two regions cannot be established. Other locations where channels are not likely to occur are left free of conductive material in order to save space.
Inventors
- 👤 Murray Arthur Polinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
175 words
In a semiconductor integrated circuit device of the type which includes a body of semiconductive material having a surface, regions in said body bounded by PN junctions extending to said surface, a layer of insulating material on said surface, and conductors overlying said layer of insulating material, said conductors, during operation of said device, being at different potentials whereby charge can leak off a conductor and spread over a finite area of said layer of insulating material to act as a field plate to induce an inversion layer channel in said body therebeneath, the improvement comprising: a conductor layer on said insulating layer over a portion of the finite area of said insulating layer which lies between one of said PN junctions and a conductor from which charge can leak, for preventing such a field induced inversion layer channel from extending into contact with one of said PN junctions, portions of said insulating layer which do not lie between said PN junction and a conductor from which charge can leak having no conductor layer thereon.
Claim 2
Dependent Claim
175 words
In a semiconductor integrated circuit device of the type which includes a body of semiconductive material having a surface, regions in said body bounded by PN junctions extending to said surface, a layer of insulating material on said surface, and conductors overlying said layer of insulating material, said conductors, during operation of said device, being at different potentials whereby charge can leak off a conductor and spread over a finite area of said layer of insulating material to act as a field plate to induce an inversion layer channel in said body therebeneath, the improvement comprising: a conductor layer on said insulating layer over a portion of the finite area of said insulating layer which lies between one of said PN junctions and a conductor from which charge can leak, for preventing such a field induced inversion layer channel from extending into contact with one of said PN junctions, portions of said insulating layer which do not lie between said PN junction and a conductor from which charge can leak having no conductor layer thereon.
Claim 3
Dependent Claim
37 words
The improvement defined in claim 1 in which there are a plurality of said finite areas, and in which there is a conductor layer on said insulating layer over a portion of each of said finite areas.
Claim 4
Dependent Claim
31 words
The improvement defined in claim 1 wherein said body has P type regions in N type material, said conductor layer overlying said N type material adjacent to a P type region.
Claim 5
Dependent Claim
25 words
The improvement defined in claim 3 wherein said conductor layer is adapted to be coupled to a source of potential during operation of said device.
Claim 6
Dependent Claim
28 words
The improvement defined in claim 3 wherein said conductor layer is a portion of a conductor layer which extends into ohmic contact with the adjacent P type region.
Claim 7
Dependent Claim
26 words
The improvement defined in claim 5 wherein said conductor layer extends over a portion only of the surface intercept of the PN junction bounding said region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-01 | 1979-12-01 | 1980-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-01 | 1983-12-01 | 1984-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-01 | 1987-12-01 | 1988-06-01 | $7700.00 | Window Closed / Lapsed |