US3602782A
Expired / Lapsed
US
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Conductor-insulator-semiconductor fieldeffect transistor with semiconductor layer embedded in dielectric underneath interconnection layer
Assignee: Individual
•
Filing: 1969-12-05
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Granted: 1971-08-31
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Expires: 1989-12-05
Abstract
Abstract A conductor-insulator-semiconductor field-effect transistor has semiconductor layers embedded in the dielectric underneath the interconnection layers in order to prevent unwanted parasitic inversion layers, due to voltages and currents in the interconnection layers, from causing deterioration in device operation.
Inventors
- 👤 Thomas Klein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:50
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
26 words
The structure recited in claim 1 wherein the substrate and embedded semiconductor layer comprise silicon, the insulating layer comprises oxide, and the interconnection layers comprise aluminum.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-30 | 1975-03-01 | 1975-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-30 | 1979-03-01 | 1979-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-30 | 1983-03-01 | 1983-08-31 | $7700.00 | Window Closed / Lapsed |