Semiconductor device for pulling down output terminal voltage

Claim 2

A semiconductor device operatively connectable to receive a power source voltage, including a buffer, a reference level power line, and an output terminal providing an output terminal voltage, comprising: a first transistor, operatively connected to the buffer, the power source voltage and the output terminal, for pulling up the output terminal voltage; a second transistor, operatively connected to the buffer, said first transistor, and the reference level power line, for pulling down the output terminal voltage; a charge-pumping circuit, operatively connected to the output terminal, for maintaining the output terminal voltage at a level higher than the power source voltage by charge-pumping when the output terminal voltage is at a high level and providing an output; and a circuit, operatively connected between the reference level power line and the power source voltage, and operatively connected to the output terminal, for pulling down the output terminal voltage during a period from the supply of power until an input signal is supplied to the buffer.

Claim 3

A semiconductor device according to claim 1, wherein said first transistor has a gate, has a source operatively connected to the power source voltage, and has a drain operatively connected to said second transistor, and wherein said circuit for pulling down the output terminal voltage is connected to the gate of said first transistor at a node.

Claim 4

A semiconductor device according to claim 1 or 2, and operatively connectable to receive a clock pulse, wherein said circuit for pulling down the output terminal voltage comprises: a pulling down MOS transistor having a gate, having a drain operatively connected between the output of said charging-pumping circuit, and having a source operatively connected to the reference level power line; a depletion-type MOS transistor having a source operatively connected to the power source voltage, having a drain, and having a gate operatively connected to the drain and operatively connected to the gate of said pulling down MOS transistor; and an enhancement-type MOS transistor having a source operatively connected to the gate of said depletion-type MOS transistor, having a drain operatively connected to the reference level power line, and having a gate operatively connected to receive the clock pulse, the clock pulse having the same phase as that of said output terminal voltage.

Claim 5

A semiconductor device according to claim 1 or 2, operatively connected to receive a clock pulse, wherein said circuit for pulling down the output terminal voltage comprises: a pulling down MOS transistor having a drain operatively connected to the output of said charge-pumping circuit, having a source operatively connected to the reference level power line, and having a gate; a first enhancement-type MOS transistor having a source and a gate operatively connected to said power source voltage, and having a drain operatively connected to the gate of said pulling down MOS transistor; and a second enhancement-type MOS transistor having a source operatively connected to the drain of said first enhancement-type MOS transistor, having a source operatively connected to the reference level power line, and having a gate operatively connected to receive the clock pulse which has the same phase as that of said output terminal voltage.

Claim 6

A semiconductor device, operatively connectable to a power source voltage and a reference voltage, including a buffer operatively connectable to receive an input signal, and an output terminal of the buffer terminal for providing an output voltage, said semiconductor device comprising: a first transistor, operatively connected to the power source voltage and the output terminal, for pulling up the output voltage; a second transistor, operatively connected to the reference voltage, said first transistor and the output terminal, for pulling down the output voltage; a charge-pumping circuit, operatively connected to the output terminal, for maintaining the output voltage at a level higher than the power source voltage when the level at the output terminal is at a high level; and a pulling down circuit, operatively connected between the power source voltage and the reference voltage and operatively connected to the output terminal and said charge-pumping circuit, for pulling down the output voltage during a time period from when a power source voltage is supplied to the buffer until the input signal is supplied to the buffer.

Claim 7

A semiconductor device, operatively connectable to a power source voltage and a reference voltage, including a buffer operatively connectable to receive an input signal, and an output terminal of the buffer terminal for providing an output voltage, said semiconductor device comprising: a first transistor, operatively connected to the power source voltage and the output terminal, for pulling up the output voltage; a second transistor, operatively connected to the reference voltage, said first transistor and the output terminal, for pulling down the output voltage; a charge-pumping circuit, operatively connected to the output terminal, for maintaining the output voltage at a level higher than the power source voltage when the level at the output terminal is at a high level; and a pulling down circuit, operatively connected between the power source voltage and the reference voltage and operatively connected to the output terminal and said charge-pumping circuit, for pulling down the output voltage during a time period from when a power source voltage is supplied to the buffer until the input signal is supplied to the buffer.

Claim 8

A semiconductor device according to claim 5, wherein said pulling down circuit comprises: a depletion-type transistor operatively connected to receive the power source voltage; an enhancement-type transistor, operatively connected in series with said depletion-type transistor and operatively connected to the reference voltage; and a pull down transistor operatively connected to the output terminal and to said charge-pumping circuit.