Field effect transistor inverter-level shifter circuitry

Claim 2

Circuitry comprising: a load device having first and second terminals, the first terminal being connectable to a first potential source and the second terminal serving as an output node; a first field effect transistor having its drain terminal coupled to the second terminal of the load device and having its gate terminal conductively ohmically coupled to a circuitry input terminal; and a second field effect transistor having its drain terminal coupled to, and only to, the source terminal of the first transistor, and having its gate terminal coupled to the gate terminal of the first transitor, and having its source terminal connectable to a second potential source, the first transistor being enhancement mode and the second transistor being depletion mode.

Claim 3

The circuitry of claim 1 wherein the load device is a third field effect transistor with its source terminal coupled to its gate terminal.

Claim 4

The circuitry of claim 2 wherein the third field effect transistor is a depletion mode transistor which has its gate and source terminals coupled to the drain of the first transistor and has its drain terminal connectable to the first potential source.

Claim 5

The circuitry of claim 3 further comprising an inverter having an input terminal coupled to the output node and having an output terminal.

Claim 6

The circuitry of claim 4 wherein: the inverter comprises fourth and fifth field effect transistors which are a depletion mode and an enhancement mode transistor, respectively, and the gate terminal of the fifth transistor serves as the input terminal of the inverter, and the gate and source terminals of the fourth transistor and the drain terminal of the fifth transistor are coupled to the output terminal of the inverter.

Claim 7

The circuitry of claim 5 wherein all transistors are n-channel type insulated gate field effect transistors.

Claim 8

The circuitry of claim 6 wherein the fifth transistor is enhancement mode and the fourth transistor is deletion mode.

Claim 9

The circuitry of claim 5 wherein all transistors are p-channel type insulated gate field effect transistors.

Claim 10

The circuitry of claim 8 wherein the fifth transistor is enhancement mode and the fourth transistor is deletion mode.

Claim 11

The circuitry of claim 5, wherein the first, second, and fifth transistors are n-channel insulated gate field effect transistors, and the third and fourth transistors are p-channel insulated gate field effect transistors.

Claim 12

The circuitry of claim 5 wherein the first, second, and fifth transistors are p-channel insulated gate field effect transistors, and the third and fourth transistors are n-channel insulated gate field effect transistors.

Claim 13

In a level-shifting circuit (a) first and second field effect transistors, each having a separate gate, source, and drain terminal, the second transistor having its drain terminal coupled to, and only to, the source terminal of the first transistor, and the second transistor having its source terminal connectable to a potential source; (b) a load device; (c) conducting means for coupling the drain terminal of the first transistor to the load device, whereby a first node is formed between the load device and the first transistor along the first conducting means, the first transistor being enhancement mode and the second transistor being depletion mode; and (d) a circuit input node, for receiving input signals to be level shifted, conductively ohmically coupled both to the gate terminal of the first transistor and to the gate terminal of the second transistor, whereby in response to the input signals being applied to the circuit input terminal there are developed inverted signals at the first node.

Claim 14

In a level-shifting circuit (a) first and second field effect transistors, each having a separate gate, source, and drain terminal, the second transistor having its drain terminal coupled to, and only to, the source terminal of the first transistor, and the second transistor having its source terminal connectable to a potential source; (b) a load device; (c) conducting means for coupling the drain terminal of the first transistor to the load device, whereby a first node is formed between the load device and the first transistor along the first conducting means, the first transistor being enhancement mode and the second transistor being depletion mode; and (d) a circuit input node, for receiving input signals to be level shifted, conductively ohmically coupled both to the gate terminal of the first transistor and to the gate terminal of the second transistor, whereby in response to the input signals being applied to the circuit input terminal there are developed inverted signals at the first node.

Claim 15

The circuit of claim 12 in which the first and second transistors are insulated gate field effect transistors.

Claim 16

The circuit of claim 13 further comprising an inverter connected for receiving and inverting the inverted signals to produce level-shifted output signals.

Claim 17

The circuit of claim 12 further comprising an inverter connected for receiving and inverting the inverted signals to produce level-shifted output signals.