US4346310A
Expired / Lapsed
US
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Voltage booster circuit
Assignee: Semiconductor Components Industries LLC
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Filing: 1980-05-09
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Granted: 1982-08-24
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Expires: 2000-05-09
Abstract
Abstract An MOS voltage boost circuit includes a first field-effect-transistor coupled between ground and an output node and a second, depletion type, field effect transistor coupled between the output node and a source of supply voltage (V DD ). The first transistor is turned off by a disabling signal, and the second transistor is turned on by an enabling signal derived, in part, from the disabling signal. This produces a first voltage at the output node. A third field-effect-transistor is capacitively coupled between the output node and the enabling signal to boost the output voltage when the enabling signal terminates.
Inventors
- 👤 Ernest A. Carter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:36
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/09425; H03K19/09429; H03K19/01; H03K19/017; H03K19/01707; H03K19/01721; H03K5/00; H03K5/01; H03K5/02; H03K5/023
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
178 words
A circuit for generating, at an output node, a voltage which is higher than the circuit's supply voltage, comprising: a first field-effect-transistor having a source electrode coupled to ground, a drain electrode coupled to said output node and a gate electrode coupled to a disabling signal for turning said first field-effect-transistor off; a second field-effect-transistor of a depletion type having a source electrode coupled to said output node, a drain electrode coupled to said supply voltage and a gate electrode coupled to an enabling signal for turning said second field-effect-transistor on when said first field-effect-transistor turns off to produce a first voltage at said output node; and voltage boost means coupled to said output node and responsive to the termination of said enabling signal for increasing the voltage at said output node, said voltage boost means comprising: inverter means having an input coupled to said enabling signal and having an output; and a third field-effect-transistor having source and drain electrodes coupled to the output of said inverter means and having a gate electrode coupled to said output node.
Claim 2
Dependent Claim
178 words
A circuit for generating, at an output node, a voltage which is higher than the circuit's supply voltage, comprising: a first field-effect-transistor having a source electrode coupled to ground, a drain electrode coupled to said output node and a gate electrode coupled to a disabling signal for turning said first field-effect-transistor off; a second field-effect-transistor of a depletion type having a source electrode coupled to said output node, a drain electrode coupled to said supply voltage and a gate electrode coupled to an enabling signal for turning said second field-effect-transistor on when said first field-effect-transistor turns off to produce a first voltage at said output node; and voltage boost means coupled to said output node and responsive to the termination of said enabling signal for increasing the voltage at said output node, said voltage boost means comprising: inverter means having an input coupled to said enabling signal and having an output; and a third field-effect-transistor having source and drain electrodes coupled to the output of said inverter means and having a gate electrode coupled to said output node.
Claim 3
Dependent Claim
24 words
A circuit according to claim 1 wherein said first field-effect-transistor is of an enhancement type and said third field-effect-transistor is of a depletion type.
Claim 4
Dependent Claim
250 words
A circuit for generating, at an output node, a voltage which is higher than the circuit's supply voltage, comprising: a first field-effect-transistor having a source electrode coupled to ground, a drain electrode coupled to said output node and a gate electrode coupled to a disabling signal for turning said first field-effect-transistor off; a second field-effect-transistor of a depletion type having a source electrode coupled to said output node, a drain electrode coupled to said supply voltage and a gate electrode coupled to an enabling signal for turning said second field-effect-transistor on when said first field-effect-transistor turns off to produce a first voltage at said output node; voltage boost means coupled to said output node and responsive to the termination of said enabling signal for increasing the voltage at said output node, said voltage boost means comprising: inverter means having an input coupled to said enabling signal and having an output; and a third field-effect-transistor having source and drain electrodes coupled to the output of said inverter means and having a gate electrode coupled to said output node; and a fourth field-effect-transistor having its current conducting path coupled between the source of said first field-effect-transistor and ground and having a gate electrode coupled to said disabling signal; and a fifth field-effect-transistor having a source electrode coupled to the source of said first field-effect-transistor, a drain electrode coupled to said supply voltage and a gate electrode coupled to said output node, said fourth and fifth field-effect-transistors for reverse biasing said first field-effect-transistor.
Claim 5
Dependent Claim
250 words
A circuit for generating, at an output node, a voltage which is higher than the circuit's supply voltage, comprising: a first field-effect-transistor having a source electrode coupled to ground, a drain electrode coupled to said output node and a gate electrode coupled to a disabling signal for turning said first field-effect-transistor off; a second field-effect-transistor of a depletion type having a source electrode coupled to said output node, a drain electrode coupled to said supply voltage and a gate electrode coupled to an enabling signal for turning said second field-effect-transistor on when said first field-effect-transistor turns off to produce a first voltage at said output node; voltage boost means coupled to said output node and responsive to the termination of said enabling signal for increasing the voltage at said output node, said voltage boost means comprising: inverter means having an input coupled to said enabling signal and having an output; and a third field-effect-transistor having source and drain electrodes coupled to the output of said inverter means and having a gate electrode coupled to said output node; and a fourth field-effect-transistor having its current conducting path coupled between the source of said first field-effect-transistor and ground and having a gate electrode coupled to said disabling signal; and a fifth field-effect-transistor having a source electrode coupled to the source of said first field-effect-transistor, a drain electrode coupled to said supply voltage and a gate electrode coupled to said output node, said fourth and fifth field-effect-transistors for reverse biasing said first field-effect-transistor.
Claim 6
Dependent Claim
56 words
A circuit according to claim 3 further including logic means for producing said enabling signal at an output thereof, said logic means having a first input coupled to said disabling signal and a second input coupled to a signal which is low when said disabling signal is low and which goes high after a predetermined delay.
Claim 7
Dependent Claim
45 words
A circuit according to claim 4 wherein said logic means is a NOR gate and wherein said enabling and disabling signals are capable of assuming low and high stable states, said disabling signal being active when low and said enabling signal being active when high.
Claim 8
Dependent Claim
163 words
An MOS voltage boost circuit for generating, at an output node, a voltage which is substantially higher than the circuit's supply voltage, comprising: a first field-effect-transistor having a source electrode coupled to ground, a drain electrode coupled to said output node and a gate electrode coupled to a disabling signal for turning said first field-effect-transistor off; a second field-effect-transistor of a depletion type having a source electrode coupled to said output node, a drain electrode coupled to said supply voltage and a gate electrode coupled to an enabling signal for turning said second field-effect-transistor on when said first field-effect-transistor turns off to produce a voltage at said output node; inverter means having an input coupled to said enabling signal and having an output; and a third field-effect-transistor having source and drain electrodes coupled to the output of said inverter means and having a gate electrode coupled to said output node for increasing the voltage at said output node when said enabling signal terminates.
Claim 9
Dependent Claim
163 words
An MOS voltage boost circuit for generating, at an output node, a voltage which is substantially higher than the circuit's supply voltage, comprising: a first field-effect-transistor having a source electrode coupled to ground, a drain electrode coupled to said output node and a gate electrode coupled to a disabling signal for turning said first field-effect-transistor off; a second field-effect-transistor of a depletion type having a source electrode coupled to said output node, a drain electrode coupled to said supply voltage and a gate electrode coupled to an enabling signal for turning said second field-effect-transistor on when said first field-effect-transistor turns off to produce a voltage at said output node; inverter means having an input coupled to said enabling signal and having an output; and a third field-effect-transistor having source and drain electrodes coupled to the output of said inverter means and having a gate electrode coupled to said output node for increasing the voltage at said output node when said enabling signal terminates.
Claim 10
Dependent Claim
79 words
A circuit according to claim 6 further comprising: a fourth field-effect-transistor having its current conducting path coupled between the source of said first field-effect-transistor and ground and having a gate electrode coupled to said disabling signal; and a fifth field-effect-transistor having a source electrode coupled to the source of said field-effect-transistor, a drain electrode coupled to said supply voltage and a gate electrode coupled to said output node, said fourth and fifth field-effect-transistors for reverse biasing said first field-effect-transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-23 | 1986-02-22 | 1986-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-23 | 1990-02-22 | 1990-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-23 | 1994-02-22 | 1994-08-24 | $7700.00 | Window Closed / Lapsed |