Patent US4567503A successfully refreshed from Google Patents.
US4567503A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MIS Device employing elemental pnictide or polyphosphide insulating layers
Assignee: Stauffer Chemical Co
•
Filing: 1983-06-29
•
Granted: 1986-01-28
•
Expires: 2003-06-29
Abstract
Abstract Metal-insulator-semiconductor devices are formed on III-V semiconductors utilizing a pnictide rich insulating layer. The layer may be applied by vacuum evaporation, sputtering, chemical vapor deposition, and from a liquid melt. Gallium arsenide, indium phosphide, and gallium phosphide substrates are insulated with an alkali metal high pnictide polypnictide, preferably a polyphosphide, having the formula MP x where x is equal to or greater than 15, including new forms of phosphorus grown in the presence of an alkali metal where x is much greater than 15. A KP 15 layer is preferred. They may also be insulated with a layer of a solid elemental pnictide, namely phosphorus, arsenic, antimony or bismuth applied by one of the above named processes. An elemental phosphorus layer is preferred. A silicon nitride, Si 3 N 4 , layer may be added on top of the pnictide layer to increase the breakdown voltage of the insulating layer.
Inventors
- 👤 Diego Olego
- 👤 David G. Brock
- 👤 John A. Baumann
- 👤 William E. Spicer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:12
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6332; H10P14/6334; H10P14/6342; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/40; H10W74/43; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
31 words
A metal insulating semiconductor device comprising: a semiconductor substrate formed from a compound of III-V semiconductor material, and an insulating layer formed from an elemental pniotide material on said semiconductor substrate.
Claim 2
Dependent Claim
31 words
A metal insulating semiconductor device comprising: a semiconductor substrate formed from a compound of III-V semiconductor material, and an insulating layer formed from an elemental pniotide material on said semiconductor substrate.
Claim 3
Dependent Claim
42 words
A metal insulating semiconductor device comprising: a semiconductor substrate formed from a compound of III-V semiconductor material, and an insulated layer formed from a polypniotide or said semiconductor substrate, said polypniotide being a compound formed from an alkali metal and a pniotide.
Claim 4
Dependent Claim
42 words
A metal insulating semiconductor device comprising: a semiconductor substrate formed from a compound of III-V semiconductor material, and an insulated layer formed from a polypniotide or said semiconductor substrate, said polypniotide being a compound formed from an alkali metal and a pniotide.
Claim 5
Dependent Claim
41 words
A metal insulating semiconductor device as claimed in claims 1 or 2 further including: a layer of silicon nitride on said insulating layer for providing both a second insulating layer and for increasing the breakdown voltage of said first insulating layer.
Claim 6
Dependent Claim
26 words
A metal insulating semiconductor device comprising: a substrate formed from a semiconductor material, and an insulating layer formed from an elemental pniotide material on said substrate.
Claim 7
Dependent Claim
26 words
A metal insulating semiconductor device comprising: a substrate formed from a semiconductor material, and an insulating layer formed from an elemental pniotide material on said substrate.
Claim 8
Dependent Claim
38 words
A metal insulating semiconductor device comprising: a substrate formed from a semiconductor material, and an insulating layer formed from a polypniotide on said semiconductor substrate said polypniotide being a compound formed from an alkali metal and a pniotide.
Claim 9
Dependent Claim
38 words
A metal insulating semiconductor device comprising: a substrate formed from a semiconductor material, and an insulating layer formed from a polypniotide on said semiconductor substrate said polypniotide being a compound formed from an alkali metal and a pniotide.
Claim 10
Dependent Claim
13 words
The device as claimed in claim 4 wherein said elemental pniotide is phosphorus.
Claim 11
Dependent Claim
30 words
The device as claimed in claim 5 wherein said polypniotide is MP x , where M is an alkali metal and M is in the range of 15 to infinity.
Claim 12
Dependent Claim
11 words
The device of claim 1 wherein said layer is elemental phosphorus.
Claim 13
Dependent Claim
11 words
The device of claim 2 wherein said polypniotide is a polyphosphide.
Claim 14
Dependent Claim
25 words
That which is claimed in claim 9 wherein said polyphosphide has the formula MP x , where x is equal to or greater than 15.
Claim 15
Dependent Claim
13 words
That which is claimed in claim 10 wherein x is equal to 15.
Claim 16
Dependent Claim
13 words
That which is claimed in claim 10 wherein M is an alkali metal.
Claim 17
Dependent Claim
13 words
That which is claimed in claim 12 wherein x is equal to 15.
Claim 18
Dependent Claim
14 words
That which is claimed in claim 12 wherein x very much greater than 15.
Claim 19
Dependent Claim
13 words
That which is claimed in claim 11 where M is an alkali metal.
Claim 20
Dependent Claim
14 words
That which is claimed in claim 9 wherein said polyphosphide is KP 15 .
References Cited (Backward Citations)
US3383567A
Cited
US3571673A
Cited
US3700978A
Cited
US3877060A
Cited
JPS56125875A
Cited
US4438351A
Cited
JPS5882570A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-27 | 1989-07-29 | 1990-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-27 | 1993-07-29 | 1994-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-27 | 1997-07-29 | 1998-01-28 | $7700.00 | Window Closed / Lapsed |