US4566173A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gate insulation layer and method of producing such a structure
Assignee: International Business Machines Corp
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Filing: 1982-06-04
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Granted: 1986-01-28
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Expires: 2002-06-04
Abstract
Abstract The method in accordance with the invention is used for the production of field-effect transistors and preferably implemented in such a manner that a thin aluminum layer (2) is deposited on the surface of a silicon substrate (1), for example, by means of a basic cleaning solution containing aluminum, that subsequently thermal oxidation is effected, during which, in addition to a silicon dioxide layer (3), an about 1 to 1.5 nm thick layer (4) containing aluminum oxide and silicon dioxide is formed and that finally, if required, at least one further layer, for example, an Si3N4 (5) or an Si3N4 (5) and an SiO2 layer are deposited. By adding about 400 ppb aluminum to the cleaning solution, which in the finished structure equals a quantity of aluminum of about 250 pg/cm2 layer surface, the threshold voltage VS is raised by about 470 millivolts. The structure produced in accordance with the invention is used in particular in N-channel field-effect transistors of the enrichment type which in series connection are integrated in great number and at high density on semiconductor substrates.
Inventors
- 👤 Werner Gossler
- 👤 Anneliese Strube
- 👤 Manfred Zurheide
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 01:05
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D64/0135; H10D64/681; H10D64/685; H10D64/693; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10D64/01346; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69391; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
124 words
A method of forming a gate insulation of an FET formed on a semiconductor substrate, comprising: treating the substrate with a basic solution having up to approximately 400 ppb of aluminum, so as to deposit up to approximately 250 pg/cm 2 of aluminum on the substrate; and oxidizing the substrate and said aluminum thereon in order to simultaneously form a first dielectric layer comprised of silicon dioxide on the substrate and a second dielectric layer comprised of aluminum oxide and silicon dioxide on said first dielectric layer, said second dielectric layer having a thickness of from about 1.0 to 1.5 nm, whereby said second dielectric layer has an aluminum content sufficient to produce an upward threshold voltage shift of up to approximately 470 millivolts.
Claim 2
Independent Claim
124 words
A method of forming a gate insulation of an FET formed on a semiconductor substrate, comprising: treating the substrate with a basic solution having up to approximately 400 ppb of aluminum, so as to deposit up to approximately 250 pg/cm 2 of aluminum on the substrate; and oxidizing the substrate and said aluminum thereon in order to simultaneously form a first dielectric layer comprised of silicon dioxide on the substrate and a second dielectric layer comprised of aluminum oxide and silicon dioxide on said first dielectric layer, said second dielectric layer having a thickness of from about 1.0 to 1.5 nm, whereby said second dielectric layer has an aluminum content sufficient to produce an upward threshold voltage shift of up to approximately 470 millivolts.
Claim 3
Dependent Claim
16 words
The invention as defined in claim 1 wherein a third layer of dielectric material is deposited.
Claim 4
Dependent Claim
19 words
The invention as defined in claim 2 wherein said third layer is comprised of Si 3 N 4 .
Claim 5
Dependent Claim
21 words
The invention as defined in claim 3 wherein said third layer is from about 10 nm to about 15 nm thick.
Claim 6
Dependent Claim
26 words
The invention as defined in claim 1, claim 2, claim 3 or claim 4 wherein a fourth layer of dielectric is deposited onto said third layer.
Claim 7
Dependent Claim
17 words
The invention as defined in claim 5 wherein said fourth layer is comprised of SiO 2 .
Claim 8
Dependent Claim
21 words
The invention as defined in claim 6 wherein said fourth layer is between about 5 nm and about 10 nm thick.
Claim 9
Dependent Claim
16 words
The invention as defined in claim 1 wherein the solution includes water, hydrogen peroxide, and ammonia.
Claim 10
Dependent Claim
37 words
The invention of claim 8 wherein the ratio of the water to the hydrogen perioxide, to the ammonia, is about 5:1:1 by volume based on a 30.5% solution of hydrogen peroxide and a 27.5% solution of ammonia.
Claim 11
Dependent Claim
30 words
The invention as defined in claim 1 wherein the oxidation is performed at about 1000° C. in a gas atmosphere of about 97% oxygen and about 3% HCl by volume.
Claim 12
Independent Claim
127 words
A method of forming a gate insulation of an FET formed on a semiconductor substrate, comprising: forming a first dielectric layer comprised of silicon dioxide on a surface of the substrate; pyrolitically depositing a second dielectric layer on said first dielectric layer, said second dielectric layer comprising a mixture of aluminum oxide and silicon dioxide, said second dielectric layer having a thickness from about 1.0-1.5 nm and an aluminum content of up to approximately 250 pg/cm 2 concentrated at an upper portion thereof, said second dielectric layer building up a negative charge in said first dielectric layer such that the resulting FET has a threshold voltage which is shifted upward by up to approximately 470 millivolts; and forming a third dielectric layer on said second dielectric layer.
Claim 13
Independent Claim
127 words
A method of forming a gate insulation of an FET formed on a semiconductor substrate, comprising: forming a first dielectric layer comprised of silicon dioxide on a surface of the substrate; pyrolitically depositing a second dielectric layer on said first dielectric layer, said second dielectric layer comprising a mixture of aluminum oxide and silicon dioxide, said second dielectric layer having a thickness from about 1.0-1.5 nm and an aluminum content of up to approximately 250 pg/cm 2 concentrated at an upper portion thereof, said second dielectric layer building up a negative charge in said first dielectric layer such that the resulting FET has a threshold voltage which is shifted upward by up to approximately 470 millivolts; and forming a third dielectric layer on said second dielectric layer.
References Cited (Backward Citations)
US2722491A
Cited
US2890971A
Cited
US3228795A
Cited
US3668004A
Cited
US3665265A
Cited
US4025669A
Cited
US3978577A
Cited
US3974003A
Cited
US4151537A
Cited
US4115914A
Cited
US4151538A
Cited
US4244986A
Cited
US4416911A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-27 | 1989-07-29 | 1990-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-27 | 1993-07-29 | 1994-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-27 | 1997-07-29 | 1998-01-28 | $7700.00 | Window Closed / Lapsed |