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US4565584A
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Method of producing single crystal film utilizing a two-step heat treatment
Assignee: Hitachi Ltd
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Filing: 1983-01-25
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Granted: 1986-01-21
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Expires: 2003-01-25
Abstract
Abstract An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.
Inventors
- 👤 Masao Tamura
- 👤 Makoto Ohkura
- 👤 Masanobu Miyao
- 👤 Nobuyoshi Natsuaki
- 👤 Naotsugu Yoshihiro
- 👤 Takashi Tokuyama
- 👤 Hiroshi Ishihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:27
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B1/06; C30B1/08; H; H10; H10P; H10P14/00; H10P14/60; C30B1/023; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/09; Y10S148/123; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
129 words
A method of producing a single crystal film, comprising: (1) the step of depositing an insulating film which has a desired plane shape, on a surface of a single crystal substrate, (2) the step of depositing an amorphous or polycrystalline film in an atmosphere of ultra-high vacuum, said film continuously covering exposed surface parts of said single crystal substrate and said insulating film, and (3) the step of turning said amorphous or polycrystalline film into a single crystal by solid phase epitaxial growth, said step of turning including a first heat treatment, at a temperature of not lower than approximately 200° C., which is conducted in the ultra-high vacuum atmosphere, and a second heat treatment, at a temperature of approximately 500°-1000° C., which is conducted in a non-oxidizing atmosphere.
Claim 2
Independent Claim
129 words
A method of producing a single crystal film, comprising: (1) the step of depositing an insulating film which has a desired plane shape, on a surface of a single crystal substrate, (2) the step of depositing an amorphous or polycrystalline film in an atmosphere of ultra-high vacuum, said film continuously covering exposed surface parts of said single crystal substrate and said insulating film, and (3) the step of turning said amorphous or polycrystalline film into a single crystal by solid phase epitaxial growth, said step of turning including a first heat treatment, at a temperature of not lower than approximately 200° C., which is conducted in the ultra-high vacuum atmosphere, and a second heat treatment, at a temperature of approximately 500°-1000° C., which is conducted in a non-oxidizing atmosphere.
Claim 3
Independent Claim
129 words
A method of producing a single crystal film, comprising: (1) the step of depositing an insulating film which has a desired plane shape, on a surface of a single crystal substrate, (2) the step of depositing an amorphous or polycrystalline film in an atmosphere of ultra-high vacuum, said film continuously covering exposed surface parts of said single crystal substrate and said insulating film, and (3) the step of turning said amorphous or polycrystalline film into a single crystal by solid phase epitaxial growth, said step of turning including a first heat treatment, at a temperature of not lower than approximately 200° C., which is conducted in the ultra-high vacuum atmosphere, and a second heat treatment, at a temperature of approximately 500°-1200° C., which is conducted in a non-oxidizing atmosphere.
Claim 4
Independent Claim
129 words
A method of producing a single crystal film, comprising: (1) the step of depositing an insulating film which has a desired plane shape, on a surface of a single crystal substrate, (2) the step of depositing an amorphous or polycrystalline film in an atmosphere of ultra-high vacuum, said film continuously covering exposed surface parts of said single crystal substrate and said insulating film, and (3) the step of turning said amorphous or polycrystalline film into a single crystal by solid phase epitaxial growth, said step of turning including a first heat treatment, at a temperature of not lower than approximately 200° C., which is conducted in the ultra-high vacuum atmosphere, and a second heat treatment, at a temperature of approximately 500°-1200° C., which is conducted in a non-oxidizing atmosphere.
Claim 5
Dependent Claim
44 words
A method of producing a single crystal film according to claim 1 or 2, wherein the ultra-high vacuum for said step of depositing and the ultra-high vacuum for the heat treatment each have an air pressure of not higher than approximately 10 -7 Torr.
Claim 6
Dependent Claim
34 words
A method of producing a single crystal film according to claim 3, wherein said air pressure for the ultra-high vacuum of the depositing step and the heat treatment is 10 -7 -10 -11 Torr.
Claim 7
Dependent Claim
22 words
A method of producing a single crystal film according to claim 1, wherein the substrate is a semiconductor substrate containing p-n junctions.
Claim 8
Dependent Claim
25 words
A method of producing a single crystal film according to claim 1 or 2, wherein the temperature of the first heat treatment is 200°-500° C.
Claim 9
Dependent Claim
26 words
A method of producing a single crystal film according to claim 1, wherein the angle between the insulating film and the substrate is at most 90°.
Claim 10
Dependent Claim
148 words
A method of producing a single crystal film according to claim 1 or 2, wherein after the step of turning the amorphous or polycrystalline film into a single crystal, performing the further steps comprising: (4) depositing a further insulating film, having a desired plane shape, on the surface of said single crystal; (5) depositing a further amorphous or polycrystalline film in an atmosphere of ultra-high vacuum, said film continuously covering exposed surface parts of the single crystal and the further insulating film; and (6) turning the further amorphous or polycrystalline film into a further single crystal by solid phase epitaxial growth, the turning the further film including a first heat treatment, at a temperature of not lower than approximately 200° C., which is conducted in the ultra-high vacuum atmosphere, and a second heat treatment, at a temperature of approximately 500°-1000° C., which is conducted in a non-oxidizing atmosphere.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-20 | 1989-07-22 | 1990-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-20 | 1993-07-22 | 1994-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-20 | 1997-07-22 | 1998-01-21 | $7700.00 | Window Closed / Lapsed |