US4563807A
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Method for making semiconductor device utilizing molecular beam epitaxy to form the emitter layers
Assignee: Panasonic Holdings Corp
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Filing: 1984-04-04
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Granted: 1986-01-14
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Expires: 2004-04-04
Abstract
Abstract Semiconductor device, such as bipolar transistor, is made by molecular beam epitaxy, wherein a emitter layer (27) and overriding contact regions (28) of polycrystalline silicon are grown continuously on a silicon substrate (23+26) without breaking high vacuum, thus eliminating the adverse interface of natural oxide film under the polycrystalline silicon layer (28) and the adverse donor-acceptor compensation while attaining a well controlled h FE and enabling a shallow emitter junction.
Inventors
- 👤 Hiroyuki Sakai
- 👤 Toyoki Takemoto
- 👤 Kenji Kawakita
- 👤 Tsutomu Fujita
- 👤 Atsuko Akiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:11
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/40; H10D10/441; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S148/00; Y10S148/123; Y10S148/124; Y10S148/169
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
102 words
Method for making a semiconductor device comprising at least the steps of; forming a first emitter layer of single-crystalline semiconductor; forming a second emitter layer of polycrystalline or amorphous semiconductor on said first layer, said first and second emitter layers being continuously formed by means of molecular beam epitaxy without forming an oxide film therebetween; forming an anti-oxidation layer on said second emitter layer; forming a pattern by etching said first and second emitter layers; and forming an oxide layer for at least surrounding side portions of said first and second emitter layers by use of said anti-oxidation layer as a mask.
Claim 2
Dependent Claim
102 words
Method for making a semiconductor device comprising at least the steps of; forming a first emitter layer of single-crystalline semiconductor; forming a second emitter layer of polycrystalline or amorphous semiconductor on said first layer, said first and second emitter layers being continuously formed by means of molecular beam epitaxy without forming an oxide film therebetween; forming an anti-oxidation layer on said second emitter layer; forming a pattern by etching said first and second emitter layers; and forming an oxide layer for at least surrounding side portions of said first and second emitter layers by use of said anti-oxidation layer as a mask.
Claim 3
Dependent Claim
28 words
The method for making a semiconductor device in accordance with claim 1, wherein said second emitter layer of a polycrystalline or amorphous semiconductor is doped with an impurity.
Claim 4
Dependent Claim
17 words
The method for making a semiconductor device in accordance with claim 2, wherein said impurity is As.
Claim 5
Dependent Claim
21 words
Method for making a semiconductor device in accordance with claim 1, wherein said anti-oxidation layer is Si 3 N 4 film.
Claim 6
Dependent Claim
83 words
Method for making a bipolar transistor comprising at least the steps of: forming an emitter layer of a single-crystalline semiconductor; forming an upper layer of polycrystalline or amorphous semiconductor on said emitter layer, said emitter and upper layers being continuously formed by means of molecular beam epitaxy so that said upper layer is directly formed on said emitter layer without an interface of oxide film therebetween, and forming an oxide layer for at least surrounding side portions of said emitter and upper layers.
Claim 7
Dependent Claim
83 words
Method for making a bipolar transistor comprising at least the steps of: forming an emitter layer of a single-crystalline semiconductor; forming an upper layer of polycrystalline or amorphous semiconductor on said emitter layer, said emitter and upper layers being continuously formed by means of molecular beam epitaxy so that said upper layer is directly formed on said emitter layer without an interface of oxide film therebetween, and forming an oxide layer for at least surrounding side portions of said emitter and upper layers.
Claim 8
Dependent Claim
25 words
The method for making a bipolar transistor in accordance with claim 5, wherein said layer of polycrystalline or amorphous semiconductor is doped with an impurity.
Claim 9
Dependent Claim
17 words
The method for making a bipolar transistor in accordance with claim 6, wherein said impurity is As.
Claim 10
Dependent Claim
120 words
Method for making a semiconductor device comprising at the least steps of: on a substrate of single crystalline semiconductor of one conductivity type, forming a first layer of a single crystal of the other conductivity type, a second layer of a single crystal of said one conductivity type and a third layer of a polycrystalline semiconductor or amorphous semiconductor, said forming being made by means of molecular beam epitaxy so that said layers are directly formed on said substrate without an interface oxide film therebetween; forming an anti-oxidation layer on said third layer; forming a pattern with openings by etching said layers; and forming an oxide layer for burying said openings by use of said anti-oxidation layer as a mask.
Claim 11
Dependent Claim
120 words
Method for making a semiconductor device comprising at the least steps of: on a substrate of single crystalline semiconductor of one conductivity type, forming a first layer of a single crystal of the other conductivity type, a second layer of a single crystal of said one conductivity type and a third layer of a polycrystalline semiconductor or amorphous semiconductor, said forming being made by means of molecular beam epitaxy so that said layers are directly formed on said substrate without an interface oxide film therebetween; forming an anti-oxidation layer on said third layer; forming a pattern with openings by etching said layers; and forming an oxide layer for burying said openings by use of said anti-oxidation layer as a mask.
Claim 12
Dependent Claim
56 words
Method for making a semiconductor device in accordance with claim 8, wherein said substrate of single crystalline semiconductor of said one conductivity type is made collector, said one layer of single crystal of said the other conductivity type is made base, and said another layer of single crystal of said one conductivity type is made emitter.
Claim 13
Dependent Claim
25 words
Method for making a semiconductor device in accordance with claim 8, wherein said layer of polycrystalline semiconductor or amorphous semiconductor is doped with an impurity.
Claim 14
Dependent Claim
16 words
Method for making a semiconductor device in accordance with claim 10, wherein said impurity is As.
Claim 15
Dependent Claim
21 words
Method for making a semiconductor device in accordance with claim 8, wherein said anti-oxidation layer is Si 3 N 4 film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-01-13 | 1989-07-15 | 1990-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-13 | 1993-07-15 | 1994-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-13 | 1997-07-15 | 1998-01-14 | $7700.00 | Window Closed / Lapsed |