US4428111A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave transistor
Assignee: AT&T Inc
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Filing: 1981-12-07
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Granted: 1984-01-31
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Expires: 2001-12-07
Abstract
Abstract A process for fabricating a high speed bipolar transistor is described wherein the collector, base and emitter layers are first grown using molecular beam epitaxy (MBE). A mesa etch is performed to isolate a base-emitter region, and a contact layer is grown using MBE over this isolated region to make contact with the thin base layer. The contact layer is selectively etched to expose the emitter layer, and metal is deposited to fabricate emitter, base and collector contacts.
Inventors
- 👤 Robert G. Swartz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:52
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/054; H10D10/40; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
110 words
A process for fabricating a high speed bipolar transistor comprising the steps of growing collector, base and emitter layers on a semiconductor substrate using molecular beam epitaxy, the substrate having a conductivity similar to the collector layer, etching the grown layers to isolate regions of emitter and base layers, growing a contact layer over the etched surface with the same conductivity as said base layer using molecular beam epitaxy, selectively etching said contact layer to expose the emitter-base layer and isolate emitter base regions, and depositing metal on the exposed emitter layer, a portion of said contact layer, and on said substrate to fabricate emitter, base and collector contacts, respectively.
Claim 2
Dependent Claim
110 words
A process for fabricating a high speed bipolar transistor comprising the steps of growing collector, base and emitter layers on a semiconductor substrate using molecular beam epitaxy, the substrate having a conductivity similar to the collector layer, etching the grown layers to isolate regions of emitter and base layers, growing a contact layer over the etched surface with the same conductivity as said base layer using molecular beam epitaxy, selectively etching said contact layer to expose the emitter-base layer and isolate emitter base regions, and depositing metal on the exposed emitter layer, a portion of said contact layer, and on said substrate to fabricate emitter, base and collector contacts, respectively.
Claim 3
Dependent Claim
150 words
A process for fabricating a bipolar transistor comprising the steps of growing at least three layers of alternate conductivity on a semiconductor substrate using molecular beam epitaxy, the semiconductor substrate having a conductivity similar to the conductivity of an immediately adjacent grown layer of the at least three layers, etching the grown layers substantially to the depth of the first grown layer to isolate regions of the top two layers, growing a contact layer over the etched surface with the same conductivity as the center one of said three layers using molecular beam epitaxy, selectively etching said contact layer to expose the topmost one of said three layers and to isolate regions of said contact layer, and depositing metal on the exposed top layer of said three grown layers, on a portion of said contact layer, and on a portion of said substrate to fabricate emitter, base and collector contacts.
Claim 4
Dependent Claim
150 words
A process for fabricating a bipolar transistor comprising the steps of growing at least three layers of alternate conductivity on a semiconductor substrate using molecular beam epitaxy, the semiconductor substrate having a conductivity similar to the conductivity of an immediately adjacent grown layer of the at least three layers, etching the grown layers substantially to the depth of the first grown layer to isolate regions of the top two layers, growing a contact layer over the etched surface with the same conductivity as the center one of said three layers using molecular beam epitaxy, selectively etching said contact layer to expose the topmost one of said three layers and to isolate regions of said contact layer, and depositing metal on the exposed top layer of said three grown layers, on a portion of said contact layer, and on a portion of said substrate to fabricate emitter, base and collector contacts.
Claim 5
Dependent Claim
162 words
A process for fabricating a bipolar transistor on a silicon substrate comprising the steps of growing three layers of alternate conductivity on said silicon substrate using molecular beam epitaxy, the silicon substrate having a conductivity similar to the conductivity of an immediately adjacent grown layer of the three layers, etching the grown layers at least to the depth of the first grown layer to isolate regions of the top two grown layers, growing a contact layer over the etched surface having the same conductivity as the middle one of said three grown layers using molecular beam epitaxy, selectively etching the contact layer to expose the top grown layer and to separate the contact layer into isolated regions each one of which has a single isolated region of the top two grown layers, and depositing metal on the exposed top layer, on a portion of said contact layer, and on a portion of said silicon substrate to fabricate emitter, base and collector contacts.
Claim 6
Dependent Claim
162 words
A process for fabricating a bipolar transistor on a silicon substrate comprising the steps of growing three layers of alternate conductivity on said silicon substrate using molecular beam epitaxy, the silicon substrate having a conductivity similar to the conductivity of an immediately adjacent grown layer of the three layers, etching the grown layers at least to the depth of the first grown layer to isolate regions of the top two grown layers, growing a contact layer over the etched surface having the same conductivity as the middle one of said three grown layers using molecular beam epitaxy, selectively etching the contact layer to expose the top grown layer and to separate the contact layer into isolated regions each one of which has a single isolated region of the top two grown layers, and depositing metal on the exposed top layer, on a portion of said contact layer, and on a portion of said silicon substrate to fabricate emitter, base and collector contacts.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-30 | 1987-08-01 | 1988-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-30 | 1991-08-01 | 1992-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-30 | 1995-08-01 | 1996-01-31 | $7700.00 | Window Closed / Lapsed |