Patent US4525429A successfully refreshed from Google Patents.
US4525429A
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Porous semiconductor dopant carriers
Assignee: Stemcor Corp
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Filing: 1983-06-08
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Granted: 1985-06-25
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Expires: 2003-06-08
Abstract
Abstract New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant carrier comprised of SiC, elemental silicon or mixtures thereof.
Inventors
- 👤 Gregory A. Kaiser
- 👤 Gabriel P. DeMunda
- 👤 Richard E. Tressler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:43
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/16; C30B31/165; H; H10; H10P; H10P10/00; H10P32/00; H10P32/10; H10P32/19; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951; Y10T; Y10T428/00; Y10T428/12; Y10T428/12014; Y10T428/12153
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
95 words
A dopant source for the vapor phase transport of dopant at elevated temperatures in the form of a sintered carrier member having a wafer configuration comprising at least 90 percent of silicon carbide, said sintered member being a solid, porous structure having a porosity of at least about 20 percent with an average pore size in the range from about 5 microns to about 250 microns, the pores thereof being impregnated with a dopant containing an element selected from the group consisting of phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium.
Claim 2
Dependent Claim
95 words
A dopant source for the vapor phase transport of dopant at elevated temperatures in the form of a sintered carrier member having a wafer configuration comprising at least 90 percent of silicon carbide, said sintered member being a solid, porous structure having a porosity of at least about 20 percent with an average pore size in the range from about 5 microns to about 250 microns, the pores thereof being impregnated with a dopant containing an element selected from the group consisting of phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium.
Claim 3
Dependent Claim
15 words
The dopant source of claim 1 wherein said sintered carrier member also comprises elemental silicon.
Claim 4
Dependent Claim
16 words
The dopant source of claim 1 wherein said dopant is selected from phosphorus, arsenic and boron.
Claim 5
Dependent Claim
15 words
The dopant source of claim 1 wherein said dopant is MgO.As 2 O 5 .
References Cited (Backward Citations)
JPS454134Y1
Cited
US3640806A
Cited
US3951587A
Cited
US4028149A
Cited
US4292264A
Cited
US4277320A
Cited
US4381233A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-24 | 1988-12-24 | 1989-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-24 | 1992-12-24 | 1993-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-24 | 1996-12-24 | 1997-06-25 | $7700.00 | Window Closed / Lapsed |