US4292264A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing polycrystalline ribbon
Assignee: Motorola Solutions Inc
•
Filing: 1980-06-30
•
Granted: 1981-09-29
•
Expires: 2000-06-30
Abstract
Abstract A method for the substantially continuous growth of polycrystalline silicon ribbon. The polycrystalline silicon is chemically vapor deposited on elongated foils which move slowly through a resistance heated furnace chamber. Vapor sealing entrance and exit ports are provided which allow the continuous transfer of the foils and polycrystalline ribbon between the chamber and the ambient. The foils are positioned within the chamber so as to mask the chamber walls and to restrict the deposition to the foils. All deposition of polycrystalline silicon takes place on one side of each of the foil pieces; deposition on the edges or backs of the foils is prevented by the positioning of the foils relative to each other. Adhesion of the foils to each other is prevented by insuring that all foils are in relative motion. The process is highly efficient and cost effective because it employs efficient resistance heating, because the only surfaces which the reactant gases can contact are hot and are regions of desired deposition, and because the length of the reaction zone can be made long enough to obtain an optimum amount of gas reaction.
Inventors
- 👤 Marlo E. Cota
- 👤 Richard W. Gurtler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:35
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/025; C30B29/00; C30B29/60; C30B29/605; Y; Y10; Y10S; Y10S117/00; Y10S117/914; Y10S117/915
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
87 words
A method for the substantially continuous formation of a silicon ribbon in a furnace heated at a desired temperature comprising the steps of: moving a plurality of elongated foil members through said furnace; positioning said plurality of elongated foil members so each forms a substantially plane wall bounding a reaction volume within said furnace; providing silicon bearing reactant vapor in said reaction volume for depositing silicon on said foil members at said desired temperature; and cooling said foil members to separate said silicon from said foil members.
Claim 2
Independent Claim
87 words
A method for the substantially continuous formation of a silicon ribbon in a furnace heated at a desired temperature comprising the steps of: moving a plurality of elongated foil members through said furnace; positioning said plurality of elongated foil members so each forms a substantially plane wall bounding a reaction volume within said furnace; providing silicon bearing reactant vapor in said reaction volume for depositing silicon on said foil members at said desired temperature; and cooling said foil members to separate said silicon from said foil members.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said silicon bearing reactant vapor further comprises a dopant gas.
Claim 4
Independent Claim
94 words
A method for the epitaxial deposition of silicon on a monocrystalline silicon substrate comprising: heating a furnace having a furnace tube positioned therethrough; providing elongated foil members and moving said foil members through said furnace tube; providing sealing means controlling the ambient within said tube and allowing said moving of said foil members; providing the monocrystalline silicon substrate, said substrate being moved through said furnace tube by contacting said moving foil member; injecting a silicon bearing reactant gas into said furnace tube, said reactant gas reacting to deposit said epitaxial layer on said substrate.
Claim 5
Independent Claim
94 words
A method for the epitaxial deposition of silicon on a monocrystalline silicon substrate comprising: heating a furnace having a furnace tube positioned therethrough; providing elongated foil members and moving said foil members through said furnace tube; providing sealing means controlling the ambient within said tube and allowing said moving of said foil members; providing the monocrystalline silicon substrate, said substrate being moved through said furnace tube by contacting said moving foil member; injecting a silicon bearing reactant gas into said furnace tube, said reactant gas reacting to deposit said epitaxial layer on said substrate.
Claim 6
Independent Claim
93 words
A method for forming polycrystalline silicon ribbon comprising the steps of: moving a plurality of elongated foils through a tube positioned within a heated furnace; positioning said foils in said tube to surround a reaction volume, said foils forming substantially plane sides of said reaction volume; vapor sealing said tube to provide a controlled ambient within said tube while allowing the moving of said foils through said tube; injecting reactant vapor into said reaction volume, said reactant vapor depositing said polycrystalline silicon on said foils; and separating said polycrystalline silicon from said foil.
Claim 7
Independent Claim
93 words
A method for forming polycrystalline silicon ribbon comprising the steps of: moving a plurality of elongated foils through a tube positioned within a heated furnace; positioning said foils in said tube to surround a reaction volume, said foils forming substantially plane sides of said reaction volume; vapor sealing said tube to provide a controlled ambient within said tube while allowing the moving of said foils through said tube; injecting reactant vapor into said reaction volume, said reactant vapor depositing said polycrystalline silicon on said foils; and separating said polycrystalline silicon from said foil.
Claim 8
Dependent Claim
27 words
The method of claim 4 wherein said reactant vapor comprises a silicon bearing gas selected from the group consisting of silane, trichlorosilane, silicon tetrachloride, and silicon tetrafluoride.
Claim 9
Dependent Claim
12 words
The method of claim 4 wherein said reactant vapor comprises a halosilane.
Claim 10
Dependent Claim
14 words
The method of claim 6 wherein said reactant vapor further comprises a dopant source.
Claim 11
Dependent Claim
11 words
The method of claim 7 wherein said dopant source comprises diborane.
Claim 12
Independent Claim
97 words
A method for forming polycrystalline ribbon on deposition substrates in a furnace heated to an elevated temperature which comprises the steps of: providing elongate deposition substrates having a substantially plane portion; moving said deposition substrates through said furnace; positioning said substrates to bound a reaction volume, said reaction volume having a substantially rectangular cross section, the sides of said rectangular cross section formed by said substantially plane portions; injecting silicon bearing reactant vapor into said reaction volume, said vapor reacting to deposit polycrystalline silicon on said deposition substrates; and separating said polycrystalline silicon from said deposition substrates.
Claim 13
Independent Claim
97 words
A method for forming polycrystalline ribbon on deposition substrates in a furnace heated to an elevated temperature which comprises the steps of: providing elongate deposition substrates having a substantially plane portion; moving said deposition substrates through said furnace; positioning said substrates to bound a reaction volume, said reaction volume having a substantially rectangular cross section, the sides of said rectangular cross section formed by said substantially plane portions; injecting silicon bearing reactant vapor into said reaction volume, said vapor reacting to deposit polycrystalline silicon on said deposition substrates; and separating said polycrystalline silicon from said deposition substrates.
Claim 14
Dependent Claim
14 words
The method of claim 9 further comprises the step of reusing said deposition substrates.
Claim 15
Dependent Claim
18 words
The method of claim 9 further comprising providing vapor sealing means to control the ambient in said furnace.
References Cited (Backward Citations)
US4035460A
Cited
US4065533A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-28 | 1985-03-30 | 1985-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-28 | 1989-03-30 | 1989-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-28 | 1993-03-30 | 1993-09-29 | $7700.00 | Window Closed / Lapsed |