Patent US4514896A successfully refreshed from Google Patents.
US4514896A
Expired / Lapsed
US
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Method of forming current confinement channels in semiconductor devices
Assignee: Nokia Bell Labs
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Filing: 1984-01-17
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Granted: 1985-05-07
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Expires: 2004-01-17
Abstract
Abstract Semiconductor light emitting devices, lasers and LEDs, are described in which the current flow channel is narrower near the top surface of the device and wider at its bottom near the active region. Also, described are several attenuation masks for fabricating the channels of these devices by particle bombardment.
Inventors
- 👤 Richard W. Dixon
- 👤 William B. Joyce
- 👤 Louis A. Koszi
- 👤 Richard C. Miller
- 👤 Bertram Schwartz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:32
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/821; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2202; H10H20/811; H10H20/822; H10H20/824; H01S5/2054; H01S5/2059; Y; Y10; Y10S; Y10S148/00; Y10S148/084; Y10S438/00; Y10S438/942
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
105 words
A method of forming a trapezoidal-shaped current channel in a semiconductor body comprising the steps of (a) epitaxially growing a semiconductor layer on a major surface of said body, (b) patterning said layer to form trapezoidal openings in said layer, the remaining segments of said layer forming complementary trapezoidal masks in cross-section, said masks having oblique side walls, (c) subjecting said body to particle bombardment, the oblique side walls of the trapezoidal masks being effective to grade the penetration depth of the particles and to form high resistivity zones having oblique sides as a function of depth, and (d) removing said masks from said surface.
Claim 2
Independent Claim
105 words
A method of forming a trapezoidal-shaped current channel in a semiconductor body comprising the steps of (a) epitaxially growing a semiconductor layer on a major surface of said body, (b) patterning said layer to form trapezoidal openings in said layer, the remaining segments of said layer forming complementary trapezoidal masks in cross-section, said masks having oblique side walls, (c) subjecting said body to particle bombardment, the oblique side walls of the trapezoidal masks being effective to grade the penetration depth of the particles and to form high resistivity zones having oblique sides as a function of depth, and (d) removing said masks from said surface.
Claim 3
Dependent Claim
33 words
The method of claim 1 wherein said layer and the portion of said body adjacent said surface are different semiconductor materials, and in step (d) said masks are removed by a stop-etch procedure.
Claim 4
Dependent Claim
54 words
The method of claim 1 or 2 wherein said layer and said body comprise Group III-V compounds, said surface has a (100) crystal orientation, and in step (b) said openings are formed by exposing said layer to an etchant which preferentially etches along (111A) crystallographic planes, so that said side walls constitute said planes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-05-06 | 1988-11-05 | 1989-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-05-06 | 1992-11-05 | 1993-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-05-06 | 1996-11-05 | 1997-05-07 | $7700.00 | Window Closed / Lapsed |