Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
129 words
A system for vacuum depositing a material onto a sample having a surface recess therein comprising: (a) a vacuum chamber capable of attaining a high vacuum; (b) a vacuum deposition source disposed in said vacuum chamber for emitting atoms; (c) an energy source operatively connected to said vacuum deposition source to initiate emission of said atoms therefrom; (d) a sample having an upper surface disposed in said vacuum chamber opposite said vacuum deposition source for receiving said atoms emitted therefrom, said sample having a surface recess therein with a wall substantially perpendicular to the plane of said sample; and (e) means for eliminating undesirable depositing angles of said atoms, said means disposed intermediate said vacuum deposition source and said sample to improve the ratio of wall to surface deposition.
Claim 2
Independent Claim
129 words
A system for vacuum depositing a material onto a sample having a surface recess therein comprising: (a) a vacuum chamber capable of attaining a high vacuum; (b) a vacuum deposition source disposed in said vacuum chamber for emitting atoms; (c) an energy source operatively connected to said vacuum deposition source to initiate emission of said atoms therefrom; (d) a sample having an upper surface disposed in said vacuum chamber opposite said vacuum deposition source for receiving said atoms emitted therefrom, said sample having a surface recess therein with a wall substantially perpendicular to the plane of said sample; and (e) means for eliminating undesirable depositing angles of said atoms, said means disposed intermediate said vacuum deposition source and said sample to improve the ratio of wall to surface deposition.
Claim 3
Dependent Claim
17 words
The system in accordance with claim 1 wherein said surface recess is formed by drilling said sample.
Claim 4
Dependent Claim
17 words
The system in accordance with claim 2 wherein said surface recess is drilled completely through said sample.
Claim 5
Dependent Claim
17 words
The system in accordance with claim 1 wherein said vacuum deposition source is a planar magnetron device.
Claim 6
Dependent Claim
18 words
The system in accordance with claim 1 wherein said means for eliminating undesirable depositing angles is a shield.
Claim 7
Dependent Claim
24 words
The system in accordance with claim 1 wherein said sample is adapted to move relative to said vacuum deposition source during a deposition process.
Claim 8
Dependent Claim
29 words
The system in accordance with claim 5 wherein said shield is at least partially formed of the same type of atoms as are emitted from said vacuum deposition source.
Claim 9
Dependent Claim
13 words
The system in accordance with claim 7 wherein said emitted atoms are copper.
Claim 10
Dependent Claim
19 words
The system in accordance with claim 5 wherein said shield is electrically grounded with respect to said vacuum chamber.
Claim 11
Dependent Claim
34 words
The system in accordance with claim 5 further comprising means operatively connected to said shield for supplying a positive charge thereto to attract relatively high energy electrons before said sample can be bombarded therewith.
Claim 12
Independent Claim
102 words
A system for vacuum depositing a material onto a sample having a channel therein comprising: (a) a plasma reactor capable of attaining a high vacuum; (b) a target disposed in said plasma reactor for sputtering atoms; (c) an energy source operatively connected to said target to sputter said atoms therefrom; (d) a substrate proximately disposed to said target for receiving said atoms sputtered therefrom, said substrate having a channel therein with a wall substantially perpendicular to the plane of said substrate; and (e) means intermediate said target and said substrate for preventing a portion of said sputtered atoms from being deposited thereon.
Claim 13
Independent Claim
102 words
A system for vacuum depositing a material onto a sample having a channel therein comprising: (a) a plasma reactor capable of attaining a high vacuum; (b) a target disposed in said plasma reactor for sputtering atoms; (c) an energy source operatively connected to said target to sputter said atoms therefrom; (d) a substrate proximately disposed to said target for receiving said atoms sputtered therefrom, said substrate having a channel therein with a wall substantially perpendicular to the plane of said substrate; and (e) means intermediate said target and said substrate for preventing a portion of said sputtered atoms from being deposited thereon.
Claim 14
Dependent Claim
24 words
The system in accordance with claim 11 wherein said means for preventing a portion of said sputtered atoms from being deposited is a shield.
Claim 15
Dependent Claim
119 words
A low temperature system for vacuum depositing a material onto a sample having an aperture therein comprising: (a) a vacuum chamber; (b) a deposition source disposed in said vacuum chamber for emitting atoms; (c) an energy source operatively connected to said deposition source to initiate emission of said atoms therefrom; (d) a sample having an upper surface disposed in said vacuum chamber opposite said deposition source for receiving said atoms emitted therefrom, said sample having an aperture therein with a wall substantially perpendicular to the plane of said sample; and (e) means for eliminating undesirable depositing angles of said atoms, said means disposed intermediate said deposition source and said sample to reduce heat generated thereon during the deposition process.
Claim 16
Dependent Claim
119 words
A low temperature system for vacuum depositing a material onto a sample having an aperture therein comprising: (a) a vacuum chamber; (b) a deposition source disposed in said vacuum chamber for emitting atoms; (c) an energy source operatively connected to said deposition source to initiate emission of said atoms therefrom; (d) a sample having an upper surface disposed in said vacuum chamber opposite said deposition source for receiving said atoms emitted therefrom, said sample having an aperture therein with a wall substantially perpendicular to the plane of said sample; and (e) means for eliminating undesirable depositing angles of said atoms, said means disposed intermediate said deposition source and said sample to reduce heat generated thereon during the deposition process.
Claim 17
Dependent Claim
21 words
The system in accordance with claim 13 wherein said sample moves relative to said vacuum deposition source during a deposition process.
Claim 18
Dependent Claim
21 words
The system in accordance with claim 13 wherein said sample is a substrate for use in the manufacture of circuit boards.
Claim 19
Dependent Claim
18 words
The system in accordance with claim 13 wherein said means for eliminating undesirable depositing angles is a shield.
Claim 20
Dependent Claim
18 words
The system in accordance with claim 16 wherein said shield is electrically grounded relative to said vacuum chamber.
Claim 21
Dependent Claim
35 words
The system in accordance with claim 16 wherein said shield is electrically positive relative to said sample so that high energy electrons are prevented from impinging on said sample and from increasing the temperature thereof.