Patent US4502210A successfully refreshed from Google Patents.
US4502210A
Expired / Lapsed
US
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Method for manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1983-06-08
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Granted: 1985-03-05
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Expires: 2003-06-08
Abstract
Abstract A semiconductor device is manufactured by selectively removing an insulating film which covers at least one conductive layer to form at least one contact hole partially exposing the conductive layer. Then, a layer of an inorganic conductive material having a melting point lower than the material comprising the conductive layer is formed on a surface of the insulating film and is melted to fill the contact hole with the inorganic conductive material. Finally a wiring layer is formed in contact with the inorganic conductive material filled in the contact hole.
Inventors
- 👤 Katsuya Okumura
- 👤 Toshinori Shinki
- 👤 Takashi Sato
- 👤 Masaaki Ueda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10W20/062
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
163 words
A method for manufacturing a semiconductor device having a lateral area of 1.5 μm square or less and a depth of 1.0 to 1.5 μm, comprising the steps of: (a) selectively removing an insulating film which covers at least one conductive layer to form at least one contact hole partially exposing said conductive layer; (b) forming a layer of an inorganic conductive material on an entire surface of said insulating film which includes said contact hole, said inorganic conductive material having a melting point lower than the melting point of the material comprising said conductive layer; (c) melting said inorganic conductive material layer sufficiently to fill said contact hole with said inorganic conductive material; (d) removing portions of said inorganic conductive material layer remaining on said insulating film after said inorganic conductive material layer is melted, thereby providing a columnar body filling said contact hole and comprising said inorganic conductive material; and (e) forming a wiring layer in contact with said columnar body.
Claim 2
Independent Claim
163 words
A method for manufacturing a semiconductor device having a lateral area of 1.5 μm square or less and a depth of 1.0 to 1.5 μm, comprising the steps of: (a) selectively removing an insulating film which covers at least one conductive layer to form at least one contact hole partially exposing said conductive layer; (b) forming a layer of an inorganic conductive material on an entire surface of said insulating film which includes said contact hole, said inorganic conductive material having a melting point lower than the melting point of the material comprising said conductive layer; (c) melting said inorganic conductive material layer sufficiently to fill said contact hole with said inorganic conductive material; (d) removing portions of said inorganic conductive material layer remaining on said insulating film after said inorganic conductive material layer is melted, thereby providing a columnar body filling said contact hole and comprising said inorganic conductive material; and (e) forming a wiring layer in contact with said columnar body.
Claim 3
Independent Claim
195 words
A method for manufacturing a semiconductor device having a lateral area of 1.5 μm square or less and a depth of 1.0 to 1.5 μm, comprising the steps of: (a) selectively removing an insulating film which covers at least one conductive layer to form at least one contact hole partially exposing said conductive layer; (b) forming a layer of an inorganic conductive material on an entire surface of said insulating film which includes said contact hole, said inorganic conductive material having a melting point lower than that of the material comprising said conductive layer; (c) selectively removing said inorganic conductive material layer to leave a part thereof only in and over said contact hole, including a peripheral portion of said contact hole, said part of said inorganic conductive layer having a volume sufficient to substantially fill up any unfilled hollow in said contact hole with said part; (d) melting said part of the inorganic conductive material layer sufficiently to fill said contact hole with said inorganic conductive material, thereby providing a columnar body filling said contact hole and comprising said inorganic conductive material; and (e) forming a wiring layer in contact with said columnar body.
Claim 4
Independent Claim
195 words
A method for manufacturing a semiconductor device having a lateral area of 1.5 μm square or less and a depth of 1.0 to 1.5 μm, comprising the steps of: (a) selectively removing an insulating film which covers at least one conductive layer to form at least one contact hole partially exposing said conductive layer; (b) forming a layer of an inorganic conductive material on an entire surface of said insulating film which includes said contact hole, said inorganic conductive material having a melting point lower than that of the material comprising said conductive layer; (c) selectively removing said inorganic conductive material layer to leave a part thereof only in and over said contact hole, including a peripheral portion of said contact hole, said part of said inorganic conductive layer having a volume sufficient to substantially fill up any unfilled hollow in said contact hole with said part; (d) melting said part of the inorganic conductive material layer sufficiently to fill said contact hole with said inorganic conductive material, thereby providing a columnar body filling said contact hole and comprising said inorganic conductive material; and (e) forming a wiring layer in contact with said columnar body.
Claim 5
Dependent Claim
23 words
A method according to claim 1 or 2, wherein said contact hole is formed by anisotropic etching and has a steep side wall.
Claim 6
Dependent Claim
19 words
A method according to claim 3 or 2, wherein said inorganic conductive material layer is formed by vacuum deposition.
Claim 7
Dependent Claim
18 words
A method according to claim 4, wherein said inorganic conductive material layer is melted in a nonoxidizing atmosphere.
Claim 8
Dependent Claim
25 words
A method according to claim 5, wherein said nonoxidizing atmosphere comprises a gaseous oxidizing component at a pressure of no more than 10 -6 Torr.
Claim 9
Dependent Claim
16 words
A method according to claim 5, wherein said inorganic conductive material comprises an aluminum-based metallic material.
Claim 10
Dependent Claim
23 words
A method according to claim 4, wherein said conductive layer comprises a semiconductor region formed by doping an impurity in a semiconductor substrate.
Claim 11
Dependent Claim
14 words
A method according to claim 8, wherein said semiconductor substrate is a silicon substrate.
Claim 12
Dependent Claim
16 words
A method according to claim 9, wherein said inorganic conductive material comprises an aluminum-based metallic material.
Claim 13
Dependent Claim
63 words
A method according to claim 10, further comprising forming a layer of a refractory metal selected from the group consisting of platinum, palladium, hafnium, tantalum, titanium, nickel, niobium, zirconium, vanadium, molybdenum and tungsten; an alloy thereof; or a silicide thereof on at least a surface portion of said semiconductor substrate exposed through said contact hole, before said inorganic conductive material layer is formed.
Claim 14
Dependent Claim
24 words
A method according to claim 4, wherein said inorganic conductive material is selected from the group consisting of an aluminum-based metallic material and tin.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-04 | 1988-09-03 | 1989-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-04 | 1992-09-03 | 1993-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-04 | 1996-09-03 | 1997-03-05 | $7700.00 | Window Closed / Lapsed |